Diodes Incorporated DMN4008LFG-13
- Part Number:
- DMN4008LFG-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2485396-DMN4008LFG-13
- Description:
- MOSFET N-CH 40V 14.4A PWDI3333-8
- Datasheet:
- DMN4008LFG-13
Diodes Incorporated DMN4008LFG-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4008LFG-13.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Weight72.007789mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time8.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3537pF @ 20V
- Current - Continuous Drain (Id) @ 25°C14.4A Ta
- Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
- Rise Time14.1ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)3.3V 10V
- Vgs (Max)±20V
- Fall Time (Typ)24.4 ns
- Turn-Off Delay Time69.7 ns
- Continuous Drain Current (ID)14.4A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0075Ohm
- DS Breakdown Voltage-Min40V
- RoHS StatusROHS3 Compliant
DMN4008LFG-13 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3537pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14.4A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 69.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (3.3V 10V), this device contributes to a reduction in overall power consumption.
DMN4008LFG-13 Features
a continuous drain current (ID) of 14.4A
the turn-off delay time is 69.7 ns
a 40V drain to source voltage (Vdss)
DMN4008LFG-13 Applications
There are a lot of Diodes Incorporated
DMN4008LFG-13 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3537pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14.4A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 69.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (3.3V 10V), this device contributes to a reduction in overall power consumption.
DMN4008LFG-13 Features
a continuous drain current (ID) of 14.4A
the turn-off delay time is 69.7 ns
a 40V drain to source voltage (Vdss)
DMN4008LFG-13 Applications
There are a lot of Diodes Incorporated
DMN4008LFG-13 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMN4008LFG-13 More Descriptions
Trans MOSFET N-CH 40V 14.4A 8-Pin PowerDI T/R
40V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET N-CH 40V 14.4A PWDI3333-8
40V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET N-CH 40V 14.4A PWDI3333-8
The three parts on the right have similar specifications to DMN4008LFG-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusPbfree CodeSubcategoryPin CountPower DissipationDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRadiation HardeningManufacturer Package IdentifierConfigurationJEDEC-95 CodePulsed Drain Current-Max (IDM)HeightLengthWidthView Compare
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DMN4008LFG-1323 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALNO LEAD26030S-PDSO-N5111W TaSingleENHANCEMENT MODEDRAIN8.2 nsN-ChannelSWITCHING7.5m Ω @ 10A, 10V3V @ 250μA3537pF @ 20V14.4A Ta74nC @ 10V14.1ns40V3.3V 10V±20V24.4 ns69.7 ns14.4A20V0.0075Ohm40VROHS3 Compliant---------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)-GULL WING26040-121.56W TaDualENHANCEMENT MODE-3.1 nsN-ChannelSWITCHING27m Ω @ 7A, 10V3V @ 250μA604pF @ 20V6A Ta12.9nC @ 10V3.1ns-4.5V 10V±20V7.5 ns15.4 ns6A20V--ROHS3 CompliantyesFET General Purpose Powers82.8W6A40VNo-------
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~150°C TJDigi-Reel®2012e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)SINGLEGULL WING26040R-PSSO-G21-2.19W Ta-ENHANCEMENT MODEDRAIN7.8 nsN-ChannelSWITCHING8.5m Ω @ 14A, 10V3V @ 250μA2072pF @ 20V18A Ta21nC @ 4.5V18.5ns40V4.5V 10V±20V14.9 ns37.3 ns27.6A20V0.0085Ohm40VROHS3 CompliantnoFET General Purpose Powers4---NoDMN4009LK3-13SINGLE WITH BUILT-IN DIODETO-252AA96.6A2.39mm6.73mm6.22mm
-
22 Weeks--SOIC-73.992255mg--Tape & Reel (TR)2012e3Active1 (Unlimited)--Matte Tin (Sn)----26030----------------40V--------ROHS3 Compliant--------------
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