Diodes Incorporated DMN4010LFG-7

Name: DMN4010LFG-7
Brand: Diodes Incorporated
SKU: 2849524-DMN4010LFG-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN4010LFG-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2849524-DMN4010LFG-7

Description:: MOSFET N-CH 40V 11.5A PWDI3333-8

ECAD Model:

Datasheet:: DMN4010LFG-7

Specifications

Diodes Incorporated DMN4010LFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN4010LFG-7.

Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Weight
72.007789mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Capacitance
1.81nF
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DMN4010
Number of Channels
1
Power Dissipation-Max
930mW Ta
Element Configuration
Single
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1810pF @ 20V
Current - Continuous Drain (Id) @ 25°C
11.5A Ta
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
11.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
RoHS Status
ROHS3 Compliant

Description

DMN4010LFG-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1810pF @ 20V.This device conducts a continuous drain current (ID) of 11.5A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

DMN4010LFG-7 Features
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 40V voltage

DMN4010LFG-7 Applications
There are a lot of Diodes Incorporated
DMN4010LFG-7 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

DMN4010LFG-7 More Descriptions

Mosfet, N-Ch, 40V, 11.5A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN4010LFG-7
Transistor, 40V, N-channel, enhancement mode MOSFET, MSL 1, 11.5A, SO-8 | Diodes Inc DMN4010LFG-7
N-Channel 40V 11.5A (Ta) 930mW (Ta) Surface Mount PowerDI3333-8
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET N-CH 40V 11.5A PWDI3333-8

Product Comparison

The three parts on the right have similar specifications to DMN4010LFG-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Capacitance

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Channels

Power Dissipation-Max

Element Configuration

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Subcategory

Terminal Form

Pin Count

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

Radiation Hardening

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

View Compare
DMN4010LFG-7

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

72.007789mg

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

1.81nF

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

DMN4010

1

930mW Ta

Single

N-Channel

12m Ω @ 14A, 10V

3V @ 250μA

1810pF @ 20V

11.5A Ta

37nC @ 10V

4.5V 10V

±20V

11.5A

20V

40V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN4027SSS-13

Diodes Incorporated

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

Obsolete

1 (Unlimited)

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

260

40

-

2

1.56W Ta

Dual

N-Channel

27m Ω @ 7A, 10V

3V @ 250μA

604pF @ 20V

6A Ta

12.9nC @ 10V

4.5V 10V

±20V

6A

20V

40V

ROHS3 Compliant

SILICON

yes

8

HIGH RELIABILITY

FET General Purpose Powers

GULL WING

8

1

ENHANCEMENT MODE

2.8W

3.1 ns

SWITCHING

3.1ns

7.5 ns

15.4 ns

6A

No

-

-

-

-

-

-

-

-

-

-

DMN4010LFG-7 vs DMN4027SSS-13
DMN4015LK3-13

Diodes Incorporated

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

-55°C~150°C TJ

Tape & Reel (TR)

2009

-

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

1

2.19W Ta

Single

N-Channel

15mOhm @ 14A, 10V

3V @ 250μA

2072pF @ 20V

13.5A Ta

42nC @ 10V

4.5V 10V

±20V

20.8A

20V

40V

ROHS3 Compliant

-

-

-

-

-

-

-

1

-

-

7.8 ns

-

18.5ns

14.9 ns

37.3 ns

-

No

TO-252-3

150°C

-55°C

40V

2.072nF

20mOhm

15 mΩ

2.39mm

6.73mm

6.22mm

DMN4010LFG-7 vs DMN4015LK3-13
DMN4025LSD-13

Diodes Incorporated

22 Weeks

-

-

SOIC

-

73.992255mg

-

Tape & Reel (TR)

2012

e3

Active

1 (Unlimited)

-

Matte Tin (Sn)

-

-

260

30

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

40V

-

-

-

-

-

-

DMN4010LFG-7 vs DMN4025LSD-13