Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CSD18532NQ5B
CSD18532NQ5B

Texas Instruments CSD18532NQ5B

Part Number:
CSD18532NQ5B
Manufacturer:
Texas Instruments
Ventron No:
2482084-CSD18532NQ5B
Description:
60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm
ECAD Model:
Datasheet:
csd18532nq5b

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Texas Instruments CSD18532NQ5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18532NQ5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD18532
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.4m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    3.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5340pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    22A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    64nC @ 10V
  • Rise Time
    8.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.7 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    22A
  • Drain-source On Resistance-Max
    0.0044Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    360 mJ
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD18532NQ5B Description
CSD18532NQ5B emerges as a member of NexFET? power MOSFETs that are specifically designed to minimize losses in power conversion applications. It is able to provide low thermal resistance and ultra-low Qg and Qgd. Based on its specific characteristics and high quality, it is well suited for DC-DC conversion, motor control, secondary-side synchronous rectifier, isolated converter, and more.

CSD18532NQ5B Features
Low thermal resistance
Ultra-low Qg and Qgd
Avalanche rated
Pb free terminal plating
Available in the SON plastic package
 
CSD18532NQ5B Applications
DC-DC conversion
Motor control
Isolated converter
Primary side switch
Secondary-side synchronous rectifier
CSD18532NQ5B More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Mosfet, N Channel, 60V, 0.0027Ohm, 100A, Son8
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 22A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 60V 22A/100A 8VSON
Product Comparison
The three parts on the right have similar specifications to CSD18532NQ5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Length
    Width
    Thickness
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Form
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Pin Count
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD18532NQ5B
    CSD18532NQ5B
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD18532
    1
    3.2W Ta
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    8.2 ns
    N-Channel
    SWITCHING
    3.4m Ω @ 25A, 10V
    3.4V @ 250μA
    5340pF @ 30V
    22A Ta 100A Tc
    64nC @ 10V
    8.7ns
    6V 10V
    ±20V
    2.7 ns
    20 ns
    100A
    20V
    22A
    0.0044Ohm
    60V
    360 mJ
    5mm
    6mm
    950μm
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    32A
    0.0023Ohm
    -
    205 mJ
    5mm
    6mm
    950μm
    -
    ROHS3 Compliant
    -
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    NO LEAD
    not_compliant
    40V
    400A
    40V
    333 pF
    -
    -
    -
    -
    CSD18532NQ5B vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    12V
    3A
    0.27Ohm
    -
    -
    1.035mm
    635μm
    200μm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NO LEAD
    -
    30V
    -
    -
    2.9 pF
    3
    -
    -
    -
    CSD18532NQ5B vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    -
    -
    1.035mm
    635μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NO LEAD
    -
    30V
    -
    -
    -
    -
    1
    150°C
    350μm
    CSD18532NQ5B vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for CSD18532NQ5B
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.