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CSD18510Q5B

Texas Instruments CSD18510Q5B

Part Number:
CSD18510Q5B
Manufacturer:
Texas Instruments
Ventron No:
2853711-CSD18510Q5B
Description:
40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm
ECAD Model:
Datasheet:
csd18510q5b

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Specifications
Texas Instruments CSD18510Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18510Q5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD18510
  • Number of Elements
    1
  • Power Dissipation-Max
    156W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    0.96m Ω @ 32A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    11400pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    300A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    153nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    42A
  • Drain-source On Resistance-Max
    0.0016Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    40V
  • Feedback Cap-Max (Crss)
    551 pF
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • RoHS Status
    ROHS3 Compliant
Description
CSD18510Q5B Description This 40-V, 0.79-mΩ, SON 5-mm × 6-mm NexFET? power MOSFET has been designed to minimize losses in power conversion applications.
CSD18510Q5B Features Low RDS(ON) Low-Thermal Resistance Avalanche Rated Logic Level Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package
CSD18510Q5B Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control
CSD18510Q5B More Descriptions
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150
MOSFET N-CH 40V 300A 8VSON / N-Channel NexFET Power MOSFET
Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R
DAC 4-CH Resistor-String 16-bit 16-Pin LFCSP T/R
Power Field-Effect Transistor, 42A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOS Power Transistors LV (=< 40V)
CSD18510Q5B 40V, N CH NEXFET MOS
Product Comparison
The three parts on the right have similar specifications to CSD18510Q5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    Avalanche Energy Rating (Eas)
    Mount
    Pin Count
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Lead Free
    Number of Channels
    Power Dissipation
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD18510Q5B
    CSD18510Q5B
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD18510
    1
    156W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    0.96m Ω @ 32A, 10V
    2.3V @ 250μA
    11400pF @ 20V
    300A Tc
    153nC @ 10V
    40V
    4.5V 10V
    ±20V
    42A
    0.0016Ohm
    400A
    40V
    551 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    not_compliant
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    40V
    4.5V 10V
    ±20V
    32A
    0.0023Ohm
    400A
    40V
    333 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    205 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD18510Q5B vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    30V
    1.8V 8V
    -
    3A
    0.27Ohm
    -
    -
    2.9 pF
    1.035mm
    635μm
    200μm
    ROHS3 Compliant
    -
    Surface Mount
    3
    3 ns
    1ns
    4 ns
    11 ns
    3A
    12V
    Lead Free
    -
    -
    -
    -
    CSD18510Q5B vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    Surface Mount
    -
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    Lead Free
    1
    500mW
    150°C
    350μm
    CSD18510Q5B vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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