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CSD13380F3

Texas Instruments CSD13380F3

Part Number:
CSD13380F3
Manufacturer:
Texas Instruments
Ventron No:
2850113-CSD13380F3
Description:
12-V, N channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd13380f3

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Specifications
Texas Instruments CSD13380F3 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD13380F3.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FemtoFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Base Part Number
    CSD13380
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    76m Ω @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    156pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.2nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    8V
  • Drain Current-Max (Abs) (ID)
    2.1A
  • Drain-source On Resistance-Max
    0.092Ohm
  • DS Breakdown Voltage-Min
    12V
  • Feedback Cap-Max (Crss)
    12.5 pF
  • Length
    690μm
  • Width
    600μm
  • Thickness
    345μm
  • RoHS Status
    ROHS3 Compliant
Description
CSD13380F3 Description
This 63-m, 12-V N-Channel FemtoFETTM MOSFET has been designed and tuned to fit into a variety of handheld and mobile applications. This technology is capable of replacing traditional small signal MOSFETs while reducing the footprint size significantly.
CSD13380F3 Features
? Minimal resistance ? Extremely low Qg and Qgd ? High drain current during operation ? Exceptionally tiny footprint - 0.73 mm X 0.64 mm ? Unobtrusive – Maximum height of 0.36 mm ? ESD protection diode integrated — HBM rated > 3-kV — CDM rating > 2-kV ? Free of lead and halogens ? Compliant with RoHS
CSD13380F3 Applications
? Designed with load switch applications in mind ? Designed for general switching applications. ? Applications involving batteries ? Mobile and handheld applications
CSD13380F3 More Descriptions
12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
Trans MOSFET N-CH 12V 3.6A 3-Pin PicoStar T/R
Small Signal Field-Effect Transistor, 2.1A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD13380F3.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    Contact Plating
    Mount
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Case Connection
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Avalanche Energy Rating (Eas)
    Number of Channels
    Power Dissipation
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    12V
    1.8V 4.5V
    8V
    2.1A
    0.092Ohm
    12V
    12.5 pF
    690μm
    600μm
    345μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    CSD16570
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    25V
    4.5V 10V
    ±20V
    59A
    -
    25V
    1290 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Gold
    Surface Mount
    e3
    Matte Tin (Sn)
    AVALANCHE RATED
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    DRAIN
    5 ns
    43ns
    72 ns
    156 ns
    100A
    20V
    400A
    Contains Lead
    -
    -
    -
    -
    -
    CSD13380F3 vs CSD16570Q5B
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    40V
    4.5V 10V
    ±20V
    32A
    0.0023Ohm
    40V
    333 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    -
    -
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    NO LEAD
    -
    not_compliant
    -
    DRAIN
    -
    -
    -
    -
    -
    -
    400A
    -
    205 mJ
    -
    -
    -
    -
    CSD13380F3 vs CSD18512Q5B
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    Surface Mount
    -
    -
    -
    NO LEAD
    -
    -
    -
    DRAIN
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    -
    Lead Free
    -
    1
    500mW
    150°C
    350μm
    CSD13380F3 vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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