CSD13385F5T

Texas Instruments CSD13385F5T

Part Number:
CSD13385F5T
Manufacturer:
Texas Instruments
Ventron No:
2851261-CSD13385F5T
Description:
12-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd13385f5

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Specifications
Texas Instruments CSD13385F5T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD13385F5T.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FemtoFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Base Part Number
    CSD13385
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    19m Ω @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    674pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    8V
  • DS Breakdown Voltage-Min
    12V
  • Length
    1.49mm
  • Width
    730μm
  • Thickness
    338μm
  • RoHS Status
    ROHS3 Compliant
Description
CSD13385F5T Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 674pF @ 6V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 12V in order to maintain normal operation.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

CSD13385F5T Features
a 12V drain to source voltage (Vdss)


CSD13385F5T Applications
There are a lot of Texas Instruments
CSD13385F5T applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
CSD13385F5T More Descriptions
MOSFET 12-V, N channel NexFET power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
MOSFET, N-CH, 12V, 7.1A, PICOSTAR; Polarité transistor: Canal N; Courant de drain Id: 7.1A; Tension Vds max..: 12V; Résistance Rds(on): 0.015ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 800mV; Dissipation de puissance
Mosfet, N-Ch, 12V, 7.1A, Picostar; Transistor Polarity:N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD13385F5T
Product Comparison
The three parts on the right have similar specifications to CSD13385F5T.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    DS Breakdown Voltage-Min
    Length
    Width
    Thickness
    RoHS Status
    Contact Plating
    Mount
    JESD-609 Code
    ECCN Code
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Pin Count
    Feedback Cap-Max (Crss)
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD13385F5T
    CSD13385F5T
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    CSD13385
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    19m Ω @ 900mA, 4.5V
    1.2V @ 250μA
    674pF @ 6V
    4.3A Ta
    5nC @ 4.5V
    12V
    1.8V 4.5V
    8V
    12V
    1.49mm
    730μm
    338μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    MOSFET (Metal Oxide)
    DUAL
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    30V
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Gold
    Surface Mount
    e4
    EAR99
    AVALANCHE RATED
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    3.1W
    DRAIN
    5 ns
    16ns
    3 ns
    23 ns
    100A
    20V
    30A
    0.0029Ohm
    400A
    Contains Lead
    -
    -
    -
    -
    -
  • CSD17484F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    1.035mm
    635μm
    200μm
    ROHS3 Compliant
    -
    Surface Mount
    -
    EAR99
    -
    NO LEAD
    -
    -
    -
    -
    -
    3 ns
    1ns
    4 ns
    11 ns
    3A
    12V
    3A
    0.27Ohm
    -
    Lead Free
    3
    2.9 pF
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    Surface Mount
    -
    EAR99
    -
    NO LEAD
    -
    -
    -
    500mW
    DRAIN
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    -
    Lead Free
    -
    -
    1
    150°C
    350μm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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