Texas Instruments CSD17576Q5BT
- Part Number:
- CSD17576Q5BT
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2850469-CSD17576Q5BT
- Description:
- 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
- Datasheet:
- csd17576q5b
Texas Instruments CSD17576Q5BT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17576Q5BT.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD17576
- Number of Elements1
- Power Dissipation-Max3.1W Ta 125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- Case ConnectionDRAIN
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4430pF @ 15V
- Current - Continuous Drain (Id) @ 25°C100A Ta
- Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
- Rise Time16ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)30A
- Drain-source On Resistance-Max0.0029Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min30V
- Length5mm
- Width6mm
- Thickness950μm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
CSD17576Q5BT Overview
A device's maximal input capacitance is 4430pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
CSD17576Q5BT Features
a continuous drain current (ID) of 100A
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a 30V drain to source voltage (Vdss)
CSD17576Q5BT Applications
There are a lot of Texas Instruments
CSD17576Q5BT applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 4430pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
CSD17576Q5BT Features
a continuous drain current (ID) of 100A
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a 30V drain to source voltage (Vdss)
CSD17576Q5BT Applications
There are a lot of Texas Instruments
CSD17576Q5BT applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
CSD17576Q5BT More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 30A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 30A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to CSD17576Q5BT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinLengthWidthThicknessRoHS StatusLead FreeSurface MountTerminal FinishAvalanche Energy Rating (Eas)Feedback Cap-Max (Crss)Pin CountNumber of ChannelsMax Junction Temperature (Tj)HeightView Compare
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CSD17576Q5BTACTIVE (Last Updated: 5 days ago)6 WeeksGoldSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEAD260not_compliantNOT SPECIFIEDCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODE3.1WDRAIN5 nsN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V16ns30V4.5V 10V±20V3 ns23 ns100A20V30A0.0029Ohm400A30V5mm6mm950μmROHS3 CompliantContains Lead---------
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ACTIVE (Last Updated: 1 week ago)6 Weeks--Surface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEAD-not_compliant-CSD185121139W TcSingleENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING1.6m Ω @ 30A, 10V2.2V @ 250μA7120pF @ 20V211A Tc--40V4.5V 10V±20V----32A0.0023Ohm400A40V5mm6mm950μmROHS3 Compliant-YESNickel/Palladium/Gold (Ni/Pd/Au)205 mJ333 pF----
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ACTIVE (Last Updated: 1 day ago)6 Weeks-Surface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99-MOSFET (Metal Oxide)BOTTOMNO LEAD---CSD174841500mW TaSingleENHANCEMENT MODE--3 nsN-ChannelSWITCHING121m Ω @ 500mA, 8V1.1V @ 250μA195pF @ 15V3A Ta1.2nC @ 4.5V1ns30V1.8V 8V-4 ns11 ns3A12V3A0.27Ohm--1.035mm635μm200μmROHS3 CompliantLead Free---2.9 pF3---
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ACTIVE (Last Updated: 1 day ago)6 Weeks-Surface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99-MOSFET (Metal Oxide)BOTTOMNO LEAD---CSD173821500mW TaSingleENHANCEMENT MODE500mWDRAIN59 nsN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V-30V1.8V 8V--279 ns2.3A10V----1.035mm635μm-ROHS3 CompliantLead Free-----1150°C350μm
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