CSD17576Q5BT

Texas Instruments CSD17576Q5BT

Part Number:
CSD17576Q5BT
Manufacturer:
Texas Instruments
Ventron No:
2850469-CSD17576Q5BT
Description:
30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
ECAD Model:
Datasheet:
csd17576q5b

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Specifications
Texas Instruments CSD17576Q5BT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17576Q5BT.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD17576
  • Number of Elements
    1
  • Power Dissipation-Max
    3.1W Ta 125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4430pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 4.5V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain-source On Resistance-Max
    0.0029Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    30V
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD17576Q5BT Overview
A device's maximal input capacitance is 4430pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

CSD17576Q5BT Features
a continuous drain current (ID) of 100A
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a 30V drain to source voltage (Vdss)


CSD17576Q5BT Applications
There are a lot of Texas Instruments
CSD17576Q5BT applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
CSD17576Q5BT More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 30A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD17576Q5BT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    Pin Count
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD17576Q5BT
    CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    30V
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    20V
    30A
    0.0029Ohm
    400A
    30V
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    not_compliant
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    32A
    0.0023Ohm
    400A
    40V
    5mm
    6mm
    950μm
    ROHS3 Compliant
    -
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    205 mJ
    333 pF
    -
    -
    -
    -
  • CSD17484F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    30V
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    12V
    3A
    0.27Ohm
    -
    -
    1.035mm
    635μm
    200μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    2.9 pF
    3
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    30V
    1.8V 8V
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    1
    150°C
    350μm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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