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CSD16570Q5B

Texas Instruments CSD16570Q5B

Part Number:
CSD16570Q5B
Manufacturer:
Texas Instruments
Ventron No:
2850393-CSD16570Q5B
Description:
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm
ECAD Model:
Datasheet:
csd16570q5b

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Specifications
Texas Instruments CSD16570Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16570Q5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD16570
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta 195W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    0.59m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    1.9V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    14000pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    250nC @ 10V
  • Rise Time
    43ns
  • Drain to Source Voltage (Vdss)
    25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    72 ns
  • Turn-Off Delay Time
    156 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    59A
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    25V
  • Feedback Cap-Max (Crss)
    1290 pF
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
 CSD16570Q5B   Description
 This 25V, 0.49m Ω, SON 5 × 6 mm NexFET power MOSFET CSD16570Q5B is designed to minimize resistance in OR ring and hot-swappable applications, not designed for switching applications.
CSD16570Q5B  Features
? Extremely Low Resistance ? Low Qg and Qgd ? Low Thermal Resistance ? Avalanche Rated ? Pb Free Terminal Plating ? RoHS Compliant ? Halogen Free ? SON 5-mm × 6-mm Plastic Package
CSD16570Q5B   Applications
? ORing and Hot Swap Applications
CSD16570Q5B More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
MOSFET 25-V N-channel NexFET Pwr MOSFET
Power Field-Effect Transistor, 59A I(D), 25V, 0.00082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET;VDS(MAX)= 25 VOLTS;3 WATTS;UNIQUE
Product Comparison
The three parts on the right have similar specifications to CSD16570Q5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Power Dissipation
    Transistor Application
    Drain-source On Resistance-Max
    Pin Count
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16570
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    5 ns
    N-Channel
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    25V
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    20V
    59A
    400A
    25V
    1290 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    5 ns
    N-Channel
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    30V
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    20V
    30A
    400A
    30V
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    3.1W
    SWITCHING
    0.0029Ohm
    -
    -
    -
    -
    CSD16570Q5B vs CSD17576Q5BT
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    3 ns
    N-Channel
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    30V
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    12V
    3A
    -
    -
    2.9 pF
    1.035mm
    635μm
    200μm
    ROHS3 Compliant
    Lead Free
    -
    SWITCHING
    0.27Ohm
    3
    -
    -
    -
    CSD16570Q5B vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    59 ns
    N-Channel
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    30V
    1.8V 8V
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    500mW
    SWITCHING
    -
    -
    1
    150°C
    350μm
    CSD16570Q5B vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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