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CSD17382F4

Texas Instruments CSD17382F4

Part Number:
CSD17382F4
Manufacturer:
Texas Instruments
Ventron No:
2850135-CSD17382F4
Description:
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd17382f4

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Specifications
Texas Instruments CSD17382F4 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17382F4.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FemtoFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Base Part Number
    CSD17382
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    59 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    64m Ω @ 500mA, 8V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    347pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.7nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 8V
  • Turn-Off Delay Time
    279 ns
  • Continuous Drain Current (ID)
    2.3A
  • Gate to Source Voltage (Vgs)
    10V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    350μm
  • Length
    1.035mm
  • Width
    635μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD17382F4 Description
CSD17382F4 is a type of N-Channel FemtoFET? MOSFET optimized for load switch applications and general-purpose switching applications. It is specifically designed and optimized to minimize the footprint in many handheld and mobile applications. Based on the unique technology, CSD17382F4 is able to replace standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

CSD17382F4 Features
Low on-resistance
Ultralow Qg and Qgd
Low-threshold voltage
Advanced switching performance
Available in the Femto package

CSD17382F4 Applications
Battery applications
Load switch applications
Handheld and mobile applications
General-purpose switching applications
CSD17382F4 More Descriptions
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection
N-Channel FemtoFET MOSFET 30V 2.3A 3-Pin PICOSTAR T/R
IC EEPROM 256K SPI 20MHZ 8SO
Product Comparison
The three parts on the right have similar specifications to CSD17382F4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Contact Plating
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Rise Time
    Vgs (Max)
    Fall Time (Typ)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Thickness
    Surface Mount
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Pin Count
    View Compare
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    CSD17382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    279 ns
    2.3A
    10V
    150°C
    350μm
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    CSD16570
    1
    -
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    25V
    4.5V 10V
    156 ns
    100A
    20V
    -
    -
    5mm
    6mm
    ROHS3 Compliant
    Contains Lead
    Gold
    e3
    Matte Tin (Sn)
    AVALANCHE RATED
    260
    not_compliant
    NOT SPECIFIED
    43ns
    ±20V
    72 ns
    59A
    400A
    25V
    1290 pF
    950μm
    -
    -
    -
    -
    CSD17382F4 vs CSD16570Q5B
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    CSD18512
    1
    -
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    40V
    4.5V 10V
    -
    -
    -
    -
    -
    5mm
    6mm
    ROHS3 Compliant
    -
    -
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    -
    not_compliant
    -
    -
    ±20V
    -
    32A
    400A
    40V
    333 pF
    950μm
    YES
    0.0023Ohm
    205 mJ
    -
    CSD17382F4 vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    CSD17484
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    30V
    1.8V 8V
    11 ns
    3A
    12V
    -
    -
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    1ns
    -
    4 ns
    3A
    -
    -
    2.9 pF
    200μm
    -
    0.27Ohm
    -
    3
    CSD17382F4 vs CSD17484F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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