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CSD18512Q5B

Texas Instruments CSD18512Q5B

Part Number:
CSD18512Q5B
Manufacturer:
Texas Instruments
Ventron No:
2850322-CSD18512Q5B
Description:
40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm
ECAD Model:
Datasheet:
csd18512q5b

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Specifications
Texas Instruments CSD18512Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18512Q5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Reach Compliance Code
    not_compliant
  • Base Part Number
    CSD18512
  • Number of Elements
    1
  • Power Dissipation-Max
    139W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.6m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7120pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    211A Tc
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    32A
  • Drain-source On Resistance-Max
    0.0023Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    40V
  • Avalanche Energy Rating (Eas)
    205 mJ
  • Feedback Cap-Max (Crss)
    333 pF
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • RoHS Status
    ROHS3 Compliant
Description
CSD18512Q5B Description
This NexFETTM 40 V, 1.3 m, 5 mm 6 mm power MOSFET CSD18512Q5B is designed to reduce losses in logical-level, power conversion applications. It has low thermal resistance and a low ON resistance. The MOSFET can operate under -55 °C~150 °C. It has Pb-free terminal plating method, which is qualified for most countries.

CSD18512Q5B Features
Avalanche rated RoHS compliant SON 5 mm × 6 mm plastic package Low thermal resistance Pb-free terminal plating Halogen-free Logic level Very Low RDS(ON)

CSD18512Q5B Applications

DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control Microcontrollers Switches
CSD18512Q5B More Descriptions
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 32A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD18512Q5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    Gate Charge (Qg) (Max) @ Vgs
    Contact Plating
    Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Lead Free
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    not_compliant
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    40V
    4.5V 10V
    ±20V
    32A
    0.0023Ohm
    400A
    40V
    205 mJ
    333 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD13385F5T
    CSD13385F5T
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    CSD13385
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    19m Ω @ 900mA, 4.5V
    1.2V @ 250μA
    674pF @ 6V
    4.3A Ta
    12V
    1.8V 4.5V
    8V
    -
    -
    -
    12V
    -
    -
    1.49mm
    730μm
    338μm
    ROHS3 Compliant
    5nC @ 4.5V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD18512Q5B vs CSD13385F5T
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    not_compliant
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    30V
    4.5V 10V
    ±20V
    30A
    0.0029Ohm
    400A
    30V
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    32nC @ 4.5V
    Gold
    Surface Mount
    260
    NOT SPECIFIED
    3.1W
    5 ns
    16ns
    3 ns
    23 ns
    100A
    20V
    Contains Lead
    -
    -
    -
    CSD18512Q5B vs CSD17576Q5BT
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    30V
    1.8V 8V
    -
    -
    -
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    2.7nC @ 4.5V
    -
    Surface Mount
    -
    -
    500mW
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    Lead Free
    1
    150°C
    350μm
    CSD18512Q5B vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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