CSD17483F4

Texas Instruments CSD17483F4

Part Number:
CSD17483F4
Manufacturer:
Texas Instruments
Ventron No:
2477897-CSD17483F4
Description:
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd17483f4

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Specifications
Texas Instruments CSD17483F4 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17483F4.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD17483
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    240m Ω @ 500mA, 8V
  • Vgs(th) (Max) @ Id
    1.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    190pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.3nC @ 4.5V
  • Rise Time
    1.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Fall Time (Typ)
    3.4 ns
  • Turn-Off Delay Time
    10.6 ns
  • Continuous Drain Current (ID)
    1.5A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.55Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    5A
  • Height
    350μm
  • Length
    1.035mm
  • Width
    635μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD17483F4T Descriptions
The FemtoFETTM N-channel MOSFET CSD17483F4T is designed and optimized to fit into numerous handheld and mobile applications. This technology is capable of replacing traditional tiny signal MOSFETs while reducing the footprint size by at least 60%. The operating temperature of CSD17483F4T is -55°C~175°C TJ and its maximum power dissipation are 1.15kW. CSD17483F4T has 3 pins and it is available in the TO-274AA packaging way. The Turn-On Delay Time of CSD17483F4T is 63 ns and the Turn-Off Delay Time is 267 ns.

CSD17483F4T Features
Low ON-resistance
Ultra-low Qg and Qgd
Ultra-small footprint
Low profile
Integrated ESD protection diode
Halogen-free
-55 to 150°C Operating junction temperature range

CSD17483F4T Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
CSD17483F4 More Descriptions
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
MOSFET N-CH 30V 1.5A 3PICOSTAR / 30 V, N-Channel FemtoFET MOSFET
MOSFET, N CHANNEL, 30V, 0.2OHM, 0402
Trans MOSFET N-CH 30V 1.5A 3-Pin PICOSTAR T/R
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD17483F4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Drain to Source Voltage (Vdss)
    Vgs (Max)
    DS Breakdown Voltage-Min
    Thickness
    Power Dissipation
    Max Junction Temperature (Tj)
    Drain Current-Max (Abs) (ID)
    Feedback Cap-Max (Crss)
    View Compare
  • CSD17483F4
    CSD17483F4
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD17483
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    3.3 ns
    N-Channel
    SWITCHING
    240m Ω @ 500mA, 8V
    1.1V @ 250μA
    190pF @ 15V
    1.5A Ta
    1.3nC @ 4.5V
    1.3ns
    1.8V 4.5V
    3.4 ns
    10.6 ns
    1.5A
    12V
    0.55Ohm
    30V
    5A
    350μm
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD13385F5T
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    CSD13385
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    19m Ω @ 900mA, 4.5V
    1.2V @ 250μA
    674pF @ 6V
    4.3A Ta
    5nC @ 4.5V
    -
    1.8V 4.5V
    -
    -
    -
    -
    -
    -
    -
    -
    1.49mm
    730μm
    ROHS3 Compliant
    -
    YES
    12V
    8V
    12V
    338μm
    -
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    CSD17382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    279 ns
    2.3A
    10V
    -
    -
    -
    350μm
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    30V
    -
    -
    -
    500mW
    150°C
    -
    -
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    CSD13380
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    -
    -
    -
    -
    0.092Ohm
    -
    -
    -
    690μm
    600μm
    ROHS3 Compliant
    -
    YES
    12V
    8V
    12V
    345μm
    -
    -
    2.1A
    12.5 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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