Texas Instruments CSD17483F4
- Part Number:
- CSD17483F4
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2477897-CSD17483F4
- Description:
- 30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
- Datasheet:
- csd17483f4
Texas Instruments CSD17483F4 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17483F4.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD17483
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time3.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs240m Ω @ 500mA, 8V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.5A Ta
- Gate Charge (Qg) (Max) @ Vgs1.3nC @ 4.5V
- Rise Time1.3ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Fall Time (Typ)3.4 ns
- Turn-Off Delay Time10.6 ns
- Continuous Drain Current (ID)1.5A
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.55Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)5A
- Height350μm
- Length1.035mm
- Width635μm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD17483F4T Descriptions
The FemtoFETTM N-channel MOSFET CSD17483F4T is designed and optimized to fit into numerous handheld and mobile applications. This technology is capable of replacing traditional tiny signal MOSFETs while reducing the footprint size by at least 60%. The operating temperature of CSD17483F4T is -55°C~175°C TJ and its maximum power dissipation are 1.15kW. CSD17483F4T has 3 pins and it is available in the TO-274AA packaging way. The Turn-On Delay Time of CSD17483F4T is 63 ns and the Turn-Off Delay Time is 267 ns.
CSD17483F4T Features
Low ON-resistance
Ultra-low Qg and Qgd
Ultra-small footprint
Low profile
Integrated ESD protection diode
Halogen-free
-55 to 150°C Operating junction temperature range
CSD17483F4T Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
The FemtoFETTM N-channel MOSFET CSD17483F4T is designed and optimized to fit into numerous handheld and mobile applications. This technology is capable of replacing traditional tiny signal MOSFETs while reducing the footprint size by at least 60%. The operating temperature of CSD17483F4T is -55°C~175°C TJ and its maximum power dissipation are 1.15kW. CSD17483F4T has 3 pins and it is available in the TO-274AA packaging way. The Turn-On Delay Time of CSD17483F4T is 63 ns and the Turn-Off Delay Time is 267 ns.
CSD17483F4T Features
Low ON-resistance
Ultra-low Qg and Qgd
Ultra-small footprint
Low profile
Integrated ESD protection diode
Halogen-free
-55 to 150°C Operating junction temperature range
CSD17483F4T Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
CSD17483F4 More Descriptions
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection
MOSFET N-CH 30V 1.5A 3PICOSTAR / 30 V, N-Channel FemtoFET MOSFET
MOSFET, N CHANNEL, 30V, 0.2OHM, 0402
Trans MOSFET N-CH 30V 1.5A 3-Pin PICOSTAR T/R
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 1.5A 3PICOSTAR / 30 V, N-Channel FemtoFET MOSFET
MOSFET, N CHANNEL, 30V, 0.2OHM, 0402
Trans MOSFET N-CH 30V 1.5A 3-Pin PICOSTAR T/R
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to CSD17483F4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRoHS StatusLead FreeSurface MountDrain to Source Voltage (Vdss)Vgs (Max)DS Breakdown Voltage-MinThicknessPower DissipationMax Junction Temperature (Tj)Drain Current-Max (Abs) (ID)Feedback Cap-Max (Crss)View Compare
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CSD17483F4ACTIVE (Last Updated: 3 days ago)8 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMNO LEAD260NOT SPECIFIEDCSD1748311500mW TaSingleENHANCEMENT MODEDRAIN3.3 nsN-ChannelSWITCHING240m Ω @ 500mA, 8V1.1V @ 250μA190pF @ 15V1.5A Ta1.3nC @ 4.5V1.3ns1.8V 4.5V3.4 ns10.6 ns1.5A12V0.55Ohm30V5A350μm1.035mm635μmROHS3 CompliantLead Free----------
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ACTIVE (Last Updated: 2 days ago)8 Weeks-Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3--MOSFET (Metal Oxide)BOTTOM---CSD133851-500mW TaSingleENHANCEMENT MODE--N-ChannelSWITCHING19m Ω @ 900mA, 4.5V1.2V @ 250μA674pF @ 6V4.3A Ta5nC @ 4.5V-1.8V 4.5V--------1.49mm730μmROHS3 Compliant-YES12V8V12V338μm----
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99-MOSFET (Metal Oxide)BOTTOMNO LEAD--CSD1738211500mW TaSingleENHANCEMENT MODEDRAIN59 nsN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V-1.8V 8V-279 ns2.3A10V---350μm1.035mm635μmROHS3 CompliantLead Free-30V---500mW150°C--
-
ACTIVE (Last Updated: 2 days ago)6 Weeks-Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99-MOSFET (Metal Oxide)BOTTOM---CSD133801-500mW TaSingleENHANCEMENT MODE--N-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V-1.8V 4.5V----0.092Ohm---690μm600μmROHS3 Compliant-YES12V8V12V345μm--2.1A12.5 pF
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