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CSD17308Q3

Texas Instruments CSD17308Q3

Part Number:
CSD17308Q3
Manufacturer:
Texas Instruments
Ventron No:
2478108-CSD17308Q3
Description:
30-V, N channel NexFET? power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
ECAD Model:
Datasheet:
csd17308q3

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Specifications
Texas Instruments CSD17308Q3 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17308Q3.
  • Lifecycle Status
    ACTIVE (Last Updated: 21 hours ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD17308
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.7W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10.3m Ω @ 10A, 8V
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta 44A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    5.1nC @ 4.5V
  • Rise Time
    5.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    2.3 ns
  • Turn-Off Delay Time
    9.9 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    1.3V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    47A
  • Drain to Source Breakdown Voltage
    30V
  • Avalanche Energy Rating (Eas)
    65 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.3 V
  • Feedback Cap-Max (Crss)
    35 pF
  • Height
    1.1mm
  • Length
    3.3mm
  • Width
    3.3mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD17308Q3 Description
The CSD17308Q3 is a low-thermal-resistance 30V N-channel NexFETTM Power MOSFET optimized for 5V gate driving. It is ideal for control or synchronous FET applications and has been engineered to minimize power conversion losses. Suitable for use as a point-of-load synchronous buck converter in networking, telecommunications, and computing systems.

CSD17308Q3 Features
Halogen-free
Avalanche rated
Ultra low Qg and Qgd
Optimized for 5V gate drive

CSD17308Q3 Applications
Power Management
Communications & Networking
Computers & Computer Peripherals
CSD17308Q3 More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH 30V 50A 8-Pin VSON-CLIP EP T/R
TEXAS INSTRUMENTS - CSD17308Q3 - MOSFET, N CH, 30V, 47A, 8SON
N CHANNEL POWER MOSFET, 30V, 47A, SON-8, FULL REEL
Power Field-Effect Transistor, 47A I(D), 30V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
New and Oringinal with 360 days guarantee
French Electronic Distributor since 1988
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
CSD17308Q3 30V, N CHANNEL NEXFET
Product Comparison
The three parts on the right have similar specifications to CSD17308Q3.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Surface Mount
    Terminal Finish
    View Compare
  • CSD17308Q3
    CSD17308Q3
    Texas Instruments
    ACTIVE (Last Updated: 21 hours ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17308
    8
    1
    1
    2.7W Ta
    Single
    ENHANCEMENT MODE
    2.7W
    DRAIN
    4.5 ns
    N-Channel
    SWITCHING
    10.3m Ω @ 10A, 8V
    1.8V @ 250μA
    700pF @ 15V
    14A Ta 44A Tc
    5.1nC @ 4.5V
    5.7ns
    3V 8V
    10V, -8V
    2.3 ns
    9.9 ns
    14A
    1.3V
    10V
    47A
    30V
    65 mJ
    150°C
    1.3 V
    35 pF
    1.1mm
    3.3mm
    3.3mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17576
    -
    1
    -
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    -
    20V
    30A
    -
    -
    -
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    Contains Lead
    NO LEAD
    not_compliant
    NOT SPECIFIED
    30V
    0.0029Ohm
    400A
    30V
    -
    -
    CSD17308Q3 vs CSD17576Q5BT
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    -
    1
    -
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    32A
    -
    205 mJ
    -
    -
    333 pF
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    -
    NO LEAD
    not_compliant
    -
    40V
    0.0023Ohm
    400A
    40V
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    CSD17308Q3 vs CSD18512Q5B
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    -
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    -
    -
    -
    -
    12.5 pF
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    12V
    0.092Ohm
    -
    12V
    YES
    -
    CSD17308Q3 vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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