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CSD16301Q2

Texas Instruments CSD16301Q2

Part Number:
CSD16301Q2
Manufacturer:
Texas Instruments
Ventron No:
2478014-CSD16301Q2
Description:
25-V, N channel NexFET? power MOSFET, single SON 2 mm x 2 mm, 29 mOhm
ECAD Model:
Datasheet:
csd16301q2

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Specifications
Texas Instruments CSD16301Q2 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16301Q2.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-SMD, Flat Leads
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD16301
  • Pin Count
    6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    2.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 4A, 8V
  • Vgs(th) (Max) @ Id
    1.55V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    340pF @ 12.5V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 4.5V
  • Rise Time
    4.4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    1.7 ns
  • Turn-Off Delay Time
    4.1 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    1.2V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    0.034Ohm
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.2 V
  • Height
    800μm
  • Length
    2mm
  • Width
    2mm
  • Thickness
    750μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD16301Q2 Description

The CSD16301Q2 is a NexFET? N-channel Power MOSFET designed to minimize losses in power conversion and load management applications, and optimized for 5V gate drive applications.The 2-mm×2-mm SON package offers excellent thermal performance for the size of the package.
CSD16301Q2 Features

Ultra-low Qg and Qgd
Low thermal resistance
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

CSD16301Q2 Applications

DC-DC Converters
Battery and Load Management Applications

Power Management
Industrial
CSD16301Q2 More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm 6-WSON -55 to 150
TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount
Trans MOSFET N-CH 25V 5A 6-Pin SON T/R
Mosfet,n Ch,25V,5A,son-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16301Q2
Power Field-Effect Transistor, 5A I(D), 25V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Channel NexFET Power MOSFET
Product Comparison
The three parts on the right have similar specifications to CSD16301Q2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Drain to Source Voltage (Vdss)
    Feedback Cap-Max (Crss)
    Surface Mount
    DS Breakdown Voltage-Min
    View Compare
  • CSD16301Q2
    CSD16301Q2
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    6-SMD, Flat Leads
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16301
    6
    1
    1
    2.3W Ta
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    2.7 ns
    N-Channel
    SWITCHING
    24m Ω @ 4A, 8V
    1.55V @ 250μA
    340pF @ 12.5V
    5A Tc
    2.8nC @ 4.5V
    4.4ns
    3V 8V
    10V, -8V
    1.7 ns
    4.1 ns
    5A
    1.2V
    10V
    5A
    0.034Ohm
    25V
    20A
    150°C
    1.2 V
    800μm
    2mm
    2mm
    750μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    3
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    3A
    0.27Ohm
    -
    -
    -
    -
    -
    1.035mm
    635μm
    200μm
    -
    -
    ROHS3 Compliant
    Lead Free
    NO LEAD
    30V
    2.9 pF
    -
    -
    CSD16301Q2 vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17382
    -
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    -
    10V
    -
    -
    -
    -
    150°C
    -
    350μm
    1.035mm
    635μm
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    NO LEAD
    30V
    -
    -
    -
    CSD16301Q2 vs CSD17382F4
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    -
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    0.092Ohm
    -
    -
    -
    -
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    12V
    12.5 pF
    YES
    12V
    CSD16301Q2 vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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