STMicroelectronics STP3NK60Z
- Part Number:
- STP3NK60Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480587-STP3NK60Z
- Description:
- MOSFET N-CH 600V 2.4A TO-220
- ECAD Model:
-
- Datasheet:
- STP3NK60Z
STMicroelectronics STP3NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3NK60Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3.6Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.4A
- Base Part NumberSTP3N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation45W
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.6 Ω @ 1.2A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds311pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.4A Tc
- Gate Charge (Qg) (Max) @ Vgs11.8nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)2.4A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)9.6A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP3NK60Z Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP3NK60Z Features
? Exceptional dv/dt capabilities
? Avalanche-proofed to the nth degree
? The gate charge has been reduced.
? Inherent capacitance is extremely low.
? Protected by a zener
STP3NK60Z Applications
Switching applications
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP3NK60Z Features
? Exceptional dv/dt capabilities
? Avalanche-proofed to the nth degree
? The gate charge has been reduced.
? Inherent capacitance is extremely low.
? Protected by a zener
STP3NK60Z Applications
Switching applications
STP3NK60Z More Descriptions
Transistor MOSFET N-CH 600V 2.4A 3-Pin (3 Tab) TO-220 Tube
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220 Zener-Protected SuperMESH™ PowerMOSFET
N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220 Zener-Protected SuperMESH™ PowerMOSFET
N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
The three parts on the right have similar specifications to STP3NK60Z.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningRoHS StatusLead FreeCase ConnectionAvalanche Energy Rating (Eas)HeightLengthWidthFactory Lead TimeView Compare
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STP3NK60ZACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH™e3Not For New Designs1 (Unlimited)3EAR993.6OhmMatte Tin (Sn)FET General Purpose Power600VMOSFET (Metal Oxide)2.4ASTP3N3145W TcSingleENHANCEMENT MODE45W9 nsN-ChannelSWITCHING3.6 Ω @ 1.2A, 10V4.5V @ 50μA311pF @ 25V2.4A Tc11.8nC @ 10V14ns10V±30V14 ns19 ns2.4A3.75VTO-220AB30V600V9.6ANo SVHCNoROHS3 CompliantLead Free------- -
-Through HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ Ve3ObsoleteNot Applicable3-98MOhmMatte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP35N31160W TcSingleENHANCEMENT MODE160W60 nsN-ChannelSWITCHING98m Ω @ 13.5A, 10V5V @ 250μA3750pF @ 100V27A Tc83nC @ 10V12ns10V±25V16 ns60 ns27A4VTO-220AB25V650V-No SVHCNoROHS3 CompliantLead FreeISOLATED800 mJ15.75mm10.4mm4.6mm-
-
---TO220---Tube-packed----------------------------------------RoHS Compliant-------
-
ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR9932mOhmMatte Tin (Sn)FET General Purpose Power60VMOSFET (Metal Oxide)30ASTP36N3170W TcSingleENHANCEMENT MODE70W10 nsN-ChannelSWITCHING40m Ω @ 15A, 10V2.5V @ 250μA660pF @ 25V30A Tc17nC @ 5V80ns5V 10V±18V13 ns19 ns30A2.5VTO-220AB18V60V-No SVHCNoROHS3 CompliantLead FreeDRAIN225 mJ9.15mm10.4mm4.6mm12 Weeks
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