STMicroelectronics STP3NK100Z
- Part Number:
- STP3NK100Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488048-STP3NK100Z
- Description:
- MOSFET N-CH 1000V 2.5A TO-220
- ECAD Model:
-
- Datasheet:
- STP3NK100Z
STMicroelectronics STP3NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3NK100Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP3N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 1.25A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds601pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.5A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time7.5ns
- Drain to Source Voltage (Vdss)1000V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)12.5A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max6Ohm
- Drain to Source Breakdown Voltage1kV
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP3NK100Z Description
STP3NK100Z is a 1000v N-channel SuperMESH? Power MOSFET. The high-voltage device STP3NK100Z is a Zener-protected N-channel Power MOSFET developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, the STP3NK100Z is designed to ensure a high level of dv/dt capability for the most demanding applications.
STP3NK100Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
STP3NK100Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
STP3NK100Z is a 1000v N-channel SuperMESH? Power MOSFET. The high-voltage device STP3NK100Z is a Zener-protected N-channel Power MOSFET developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, the STP3NK100Z is designed to ensure a high level of dv/dt capability for the most demanding applications.
STP3NK100Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
STP3NK100Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
STP3NK100Z More Descriptions
Mosfet Transistor, N Channel, 2.5 A, 1 Kv, 5.4 Ohm, 10 V, 3.75 V
N-Channel 1000 V 6 Ohm Flange Mount Zener-Protected SuperMESH Mosfet TO-220
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3 Tab) TO-220 Tube
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 1000V, 2.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 5.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 1kV; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
N-Channel 1000 V 6 Ohm Flange Mount Zener-Protected SuperMESH Mosfet TO-220
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3 Tab) TO-220 Tube
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 1000V, 2.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 5.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 1kV; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STP3NK100Z.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeCase ConnectionResistancePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusAvalanche Energy Rating (Eas)Lifecycle StatusVoltage - Rated DCCurrent RatingView Compare
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STP3NK100ZThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH™e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP3N3190W TcSingleENHANCEMENT MODE90W15 nsN-ChannelSWITCHING6 Ω @ 1.25A, 10V4.5V @ 50μA601pF @ 25V2.5A Tc18nC @ 10V7.5ns1000V10V±30V32 ns39 ns12.5A3.75VTO-220AB30V6Ohm1kV15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free------------- -
Through HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ V--Active1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)STP36N-1190W TcSingleENHANCEMENT MODE190W56 nsN-ChannelSWITCHING80m Ω @ 16.5A, 10V5V @ 250μA2670pF @ 100V33A Tc62nC @ 10V--10V±25V-56 ns33A-TO-220AB25V0.08Ohm550V15.75mm10.4mm4.6mm-NoROHS3 CompliantLead Free17 WeeksDRAIN----------
-
Through HoleThrough HoleTO-220-3-SILICON150°C TJTubeMDmesh™ IIe3-Obsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP30N31190W TcSingleENHANCEMENT MODE190W-N-ChannelSWITCHING115m Ω @ 13.5A, 10V4V @ 250μA2740pF @ 50V27A Tc94nC @ 10V20ns-10V±25V60 ns115 ns27A-TO-220AB25V-500V-----ROHS3 CompliantLead Free-ISOLATED115mOhmNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T3Not Qualified900 mJ---
-
Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeSTripFET™ IIe3-Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP36N3170W TcSingleENHANCEMENT MODE70W10 nsN-ChannelSWITCHING40m Ω @ 15A, 10V2.5V @ 250μA660pF @ 25V30A Tc17nC @ 5V80ns-5V 10V±18V13 ns19 ns30A2.5VTO-220AB18V-60V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free12 WeeksDRAIN32mOhm-----225 mJACTIVE (Last Updated: 8 months ago)60V30A
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