STP3HNK90Z

STMicroelectronics STP3HNK90Z

Part Number:
STP3HNK90Z
Manufacturer:
STMicroelectronics
Ventron No:
2488022-STP3HNK90Z
Description:
MOSFET N-CH 800V 3A TO-220
ECAD Model:
Datasheet:
ST(F,P)3HNK90Z

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Specifications
STMicroelectronics STP3HNK90Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3HNK90Z.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    900V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    3A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP3HN
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    90W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    90W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.2 Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    690pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    28ns
  • Drain to Source Voltage (Vdss)
    800V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    3A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain to Source Breakdown Voltage
    900V
  • Pulsed Drain Current-Max (IDM)
    12A
  • Avalanche Energy Rating (Eas)
    200 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP3HNK90Z Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 690pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

STP3HNK90Z Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)


STP3HNK90Z Applications
There are a lot of STMicroelectronics
STP3HNK90Z applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP3HNK90Z More Descriptions
Power MOSFET Transistors N-Ch 900 Volt 3.0Amp
Power Field-Effect Transistor, 3A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CAP CER 0.015UF 50V X7R RADIAL
Product Comparison
The three parts on the right have similar specifications to STP3HNK90Z.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Factory Lead Time
    Number of Pins
    ECCN Code
    Case Connection
    Turn On Delay Time
    Drain-source On Resistance-Max
    Height
    Length
    Width
    Radiation Hardening
    Resistance
    View Compare
  • STP3HNK90Z
    STP3HNK90Z
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    FET General Purpose Power
    900V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    3A
    NOT SPECIFIED
    STP3HN
    3
    R-PSFM-T3
    Not Qualified
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    N-Channel
    SWITCHING
    4.2 Ω @ 1.5A, 10V
    4.5V @ 50μA
    690pF @ 25V
    3A Tc
    35nC @ 10V
    28ns
    800V
    10V
    ±30V
    27 ns
    42 ns
    3A
    TO-220AB
    30V
    3A
    900V
    12A
    200 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP36N55M5
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    150°C TJ
    Tube
    MDmesh™ V
    -
    Active
    1 (Unlimited)
    3
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STP36N
    -
    -
    -
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    N-Channel
    SWITCHING
    80m Ω @ 16.5A, 10V
    5V @ 250μA
    2670pF @ 100V
    33A Tc
    62nC @ 10V
    -
    -
    10V
    ±25V
    -
    56 ns
    33A
    TO-220AB
    25V
    -
    550V
    -
    -
    ROHS3 Compliant
    Lead Free
    17 Weeks
    3
    EAR99
    DRAIN
    56 ns
    0.08Ohm
    15.75mm
    10.4mm
    4.6mm
    No
    -
  • STP30NM50N
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    STP30N
    3
    R-PSFM-T3
    Not Qualified
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    N-Channel
    SWITCHING
    115m Ω @ 13.5A, 10V
    4V @ 250μA
    2740pF @ 50V
    27A Tc
    94nC @ 10V
    20ns
    -
    10V
    ±25V
    60 ns
    115 ns
    27A
    TO-220AB
    25V
    -
    500V
    -
    900 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    EAR99
    ISOLATED
    -
    -
    -
    -
    -
    -
    115mOhm
  • STP30NF20
    -
    -
    TO220
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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