STMicroelectronics STP3HNK90Z
- Part Number:
- STP3HNK90Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488022-STP3HNK90Z
- Description:
- MOSFET N-CH 800V 3A TO-220
- Datasheet:
- ST(F,P)3HNK90Z
STMicroelectronics STP3HNK90Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3HNK90Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC900V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating3A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP3HN
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time28ns
- Drain to Source Voltage (Vdss)800V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)3A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)3A
- Drain to Source Breakdown Voltage900V
- Pulsed Drain Current-Max (IDM)12A
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP3HNK90Z Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 690pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STP3HNK90Z Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)
STP3HNK90Z Applications
There are a lot of STMicroelectronics
STP3HNK90Z applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 690pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STP3HNK90Z Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)
STP3HNK90Z Applications
There are a lot of STMicroelectronics
STP3HNK90Z applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP3HNK90Z More Descriptions
Power MOSFET Transistors N-Ch 900 Volt 3.0Amp
Power Field-Effect Transistor, 3A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CAP CER 0.015UF 50V X7R RADIAL
Power Field-Effect Transistor, 3A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CAP CER 0.015UF 50V X7R RADIAL
The three parts on the right have similar specifications to STP3HNK90Z.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeFactory Lead TimeNumber of PinsECCN CodeCase ConnectionTurn On Delay TimeDrain-source On Resistance-MaxHeightLengthWidthRadiation HardeningResistanceView Compare
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STP3HNK90ZThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3Matte Tin (Sn)FET General Purpose Power900VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant3ANOT SPECIFIEDSTP3HN3R-PSFM-T3Not Qualified190W TcSingleENHANCEMENT MODE90WN-ChannelSWITCHING4.2 Ω @ 1.5A, 10V4.5V @ 50μA690pF @ 25V3A Tc35nC @ 10V28ns800V10V±30V27 ns42 ns3ATO-220AB30V3A900V12A200 mJROHS3 CompliantLead Free------------
-
Through HoleThrough HoleTO-220-3SILICON150°C TJTubeMDmesh™ V-Active1 (Unlimited)3-FET General Purpose Power-MOSFET (Metal Oxide)----STP36N---1190W TcSingleENHANCEMENT MODE190WN-ChannelSWITCHING80m Ω @ 16.5A, 10V5V @ 250μA2670pF @ 100V33A Tc62nC @ 10V--10V±25V-56 ns33ATO-220AB25V-550V--ROHS3 CompliantLead Free17 Weeks3EAR99DRAIN56 ns0.08Ohm15.75mm10.4mm4.6mmNo-
-
Through HoleThrough HoleTO-220-3SILICON150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant-NOT SPECIFIEDSTP30N3R-PSFM-T3Not Qualified1190W TcSingleENHANCEMENT MODE190WN-ChannelSWITCHING115m Ω @ 13.5A, 10V4V @ 250μA2740pF @ 50V27A Tc94nC @ 10V20ns-10V±25V60 ns115 ns27ATO-220AB25V-500V-900 mJROHS3 CompliantLead Free--EAR99ISOLATED------115mOhm
-
--TO220--Tube-packed------------------------------------------RoHS Compliant------------
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