STMicroelectronics STP300NH02L

Name: STP300NH02L
Brand: STMicroelectronics
SKU: 2488056-STP300NH02L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP300NH02L

Manufacturer:: STMicroelectronics

Ventron No:: 2488056-STP300NH02L

Description:: MOSFET N-CH 24V 120A TO-220

ECAD Model:

Datasheet:: STP300NH02L

Specifications

STMicroelectronics STP300NH02L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP300NH02L.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2.2MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP300
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7055pF @ 15V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
109.4nC @ 10V
Rise Time
275ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
94.4 ns
Turn-Off Delay Time
138 ns
Continuous Drain Current (ID)
120A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
24V
Pulsed Drain Current-Max (IDM)
480A
Avalanche Energy Rating (Eas)
1600 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP300NH02L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7055pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 138 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP300NH02L Features
the avalanche energy rating (Eas) is 1600 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 138 ns
based on its rated peak drain current 480A.

STP300NH02L Applications
There are a lot of STMicroelectronics
STP300NH02L applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

STP300NH02L More Descriptions

N-channel 24 V, 1.8 mOhm, 120 A, TO-220 STripFET(TM) Power MOSFET
Power Field-Effect Transistor, 120A I(D), 24V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N CH 24V 120A TO-220; Transistor Polarity:N Channel; On State Resistance:1.8mohm; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; Case Style:TO-220; Cont Current Id:80A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:24V; Typ Voltage Vgs th:2V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STP300NH02L.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Number of Pins

Case Connection

Turn On Delay Time

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Height

Length

Width

JESD-609 Code

Pbfree Code

Terminal Finish

Nominal Vgs

REACH SVHC

Radiation Hardening

View Compare
STP300NH02L

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

STripFET™

Obsolete

1 (Unlimited)

3

EAR99

2.2MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP300

3

R-PSFM-T3

Not Qualified

1

300W Tc

Single

ENHANCEMENT MODE

300W

N-Channel

SWITCHING

2.2m Ω @ 80A, 10V

2V @ 250μA

7055pF @ 15V

120A Tc

109.4nC @ 10V

275ns

10V

±20V

94.4 ns

138 ns

120A

TO-220AB

20V

24V

480A

1600 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP33N65M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

-

-

STP33N

-

-

-

1

190W Tc

Single

ENHANCEMENT MODE

-

N-Channel

SWITCHING

140m Ω @ 12A, 10V

4V @ 250μA

1790pF @ 100V

24A Tc

41.5nC @ 10V

-

10V

±25V

-

72.5 ns

24A

TO-220AB

25V

-

96A

780 mJ

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

3

DRAIN

13.5 ns

650V

0.14Ohm

650V

15.75mm

10.4mm

4.6mm

-

-

-

-

-

-

STP300NH02L vs STP33N65M2
STP30NF20

STMicroelectronics

-

-

TO220

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP300NH02L vs STP30NF20
STP3N62K3

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

SuperMESH3™

Obsolete

1 (Unlimited)

3

EAR99

2.5Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STP3N

3

-

-

1

45W Tc

Single

ENHANCEMENT MODE

45W

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

6.8ns

10V

±30V

15.6 ns

22 ns

2.7A

TO-220AB

30V

620V

10.8A

100 mJ

ROHS3 Compliant

Lead Free

-

-

3

-

9 ns

-

-

-

15.75mm

10.4mm

4.6mm

e3

yes

Matte Tin (Sn)

3.75 V

No SVHC

No

STP300NH02L vs STP3N62K3