STMicroelectronics STGWT40H65DFB
- Part Number:
- STGWT40H65DFB
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494389-STGWT40H65DFB
- Description:
- IGBT 650V 80A 283W TO3P-3L
- ECAD Model:
-
- Datasheet:
- STGWT40H65DFB
STMicroelectronics STGWT40H65DFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT40H65DFB.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time32 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.756003g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation283W
- Base Part NumberSTGWT40
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max283W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current80A
- Reverse Recovery Time62 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 40A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
- IGBT TypeTrench Field Stop
- Gate Charge210nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C40ns/142ns
- Switching Energy498μJ (on), 363μJ (off)
- Gate-Emitter Voltage-Max20V
- Height20.1mm
- Length15.8mm
- Width5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGWT40H65DFB Description
STGWT40H65DFB is an IGBT Transistor. The STMicroelectronics STGWT40H65DFB is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWT40H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Additionally, the slightly positive VCE(sat) temperature coefficient and extremely narrow parameter distribution result in a safer paralleling operation.
STGWT40H65DFB Features
Minimized tail current
Maximum junction temperature: TJ = 175 °C
Low thermal resistance
High-speed switching series
Safe paralleling
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Very fast soft recovery antiparallel diode
STGWT40H65DFB Applications
Stand-alone inverters
Grid-tie inverters
Battery backup inverters
Intelligent hybrid inverters,
High-frequency converters
STGWT40H65DFB is an IGBT Transistor. The STMicroelectronics STGWT40H65DFB is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWT40H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Additionally, the slightly positive VCE(sat) temperature coefficient and extremely narrow parameter distribution result in a safer paralleling operation.
STGWT40H65DFB Features
Minimized tail current
Maximum junction temperature: TJ = 175 °C
Low thermal resistance
High-speed switching series
Safe paralleling
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Very fast soft recovery antiparallel diode
STGWT40H65DFB Applications
Stand-alone inverters
Grid-tie inverters
Battery backup inverters
Intelligent hybrid inverters,
High-frequency converters
STGWT40H65DFB More Descriptions
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3 Tab) TO-3P Tube
Igbt, 650V, 80A, 175Deg C, 283W Rohs Compliant: Yes |Stmicroelectronics STGWT40H65DFB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
Igbt, 650V, 80A, 175Deg C, 283W Rohs Compliant: Yes |Stmicroelectronics STGWT40H65DFB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
The three parts on the right have similar specifications to STGWT40H65DFB.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreePower DissipationTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishVoltage - Rated DCCurrent RatingPin CountNumber of ElementsTurn On Delay TimeTransistor ApplicationRise TimeDrain to Source Voltage (Vdss)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeInput CapacitanceTurn On TimeContinuous Collector CurrentTurn Off Time-Nom (toff)Gate-Emitter Thr Voltage-MaxREACH SVHCView Compare
-
STGWT40H65DFBACTIVE (Last Updated: 7 months ago)32 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.756003g-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors283WSTGWT40SingleStandard283WN-CHANNEL650V80A62 ns650V1.6V400V, 40A, 5 Ω, 15V2V @ 15V, 40ATrench Field Stop210nC160A40ns/142ns498μJ (on), 363μJ (off)20V20.1mm15.8mm5mmNoROHS3 CompliantLead Free------------------------- -
-20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors283WSTGW40SingleStandard-N-CHANNEL600V80A-600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A-/208ns411μJ (off)20V20.15mm15.75mm5.15mmNoROHS3 Compliant-283W-----------------------
-
-20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)EAR99-283WSTGW40SingleStandard--600V80A41ns600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)-20.15mm15.75mm5.15mmNoROHS3 CompliantLead Free283W-----------------------
-
--Through HoleThrough HoleTO-247-3338.000013g-55°C~150°C TJTubeObsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250WSTGW40SingleStandard-N-CHANNEL600V70A45 ns600V2.1V390V, 30A, 10 Ω, 15V2.5V @ 15V, 30A-126nC230A33ns/168ns302μJ (on), 349μJ (off)20V20.15mm15.75mm5.15mmNoROHS3 CompliantLead Free250WSILICONPowerMESH™e3yes3Tin (Sn)600V40A3133 nsPOWER CONTROL12ns650V168 ns40ATO-247AC2.9nF46 ns40A280 ns5.75VNo SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 November 2023
An Overview of 74HC373 Octal Transparent D Type Latch
Ⅰ. Overview of 74HC373Ⅱ. Manufacturer of 74HC373Ⅲ. Pin configuration and functions of 74HC373Ⅳ. What are the features of 74HC373?Ⅴ. Technical parameters of 74HC373Ⅵ. What are the applications of... -
23 November 2023
OP07 Operational Amplifier Features, Pin Configuration and Application Scenarios
Ⅰ. Overview of OP07 operational amplifierⅡ. Features of OP07 operational amplifierⅢ. OP07 symbol, footprint and pin configurationⅣ. Working principle of OP07 operational amplifierⅤ. Differential amplifier circuit of OP07Ⅵ.... -
23 November 2023
AT89C52 Microcontroller Equivalents, Functions, Structure and Applications
Ⅰ. What is AT89C52 microcontroller?Ⅱ. What are the features of AT89C52 microcontroller?Ⅲ. AT89C52 symbol, footprint and pin configurationⅣ. Functions of AT89C52 microcontrollerⅤ. Structure of AT89C52 microcontrollerⅥ. What are... -
24 November 2023
6N136 High Speed Optocoupler Pin Configuration, Features and Working principle
Ⅰ. Overview of 6N136 optocouplerⅡ. Symbol, footprint and pin configuration of 6N136 optocouplerⅢ. Features of 6N136 optocouplerⅣ. Technical parameters of 6N136 optocouplerⅤ. Applications of 6N136 optocouplerⅥ. Working principle...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.