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STGWT30V60F

STMicroelectronics STGWT30V60F

Part Number:
STGWT30V60F
Manufacturer:
STMicroelectronics
Ventron No:
3587173-STGWT30V60F
Description:
IGBT 600V 60A 260W TO3PF
ECAD Model:
Datasheet:
STGWT30V60F

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Specifications
STMicroelectronics STGWT30V60F technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT30V60F.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    260W
  • Base Part Number
    STGWT30
  • Element Configuration
    Single
  • Power Dissipation
    260W
  • Input Type
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.3V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    163nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    45ns/189ns
  • Switching Energy
    383μJ (on), 233μJ (off)
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGWT30V60F Description
STGWT30V60F is a member of the V series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-3P package to save board space. 

STGWT30V60F Features
Low conduction and switching losses A slightly positive VCE(sat) temperature coefficient  Very tight parameter distribution Supplied in the TO-3P package High-speed switching series

STGWT30V60F Applications
Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters
STGWT30V60F More Descriptions
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube
IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
IGBT N-Ch 600V 30A High-Speed TO3P
IGBT, SINGLE, 600V, 60A, TO-3P
Igbt, Single, 600V, 60A, To-3P; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:260W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to STGWT30V60F.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Series
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Weight
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Lead Free
    Contact Plating
    JESD-30 Code
    JEDEC-95 Code
    View Compare
  • STGWT30V60F
    STGWT30V60F
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    32 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    260W
    STGWT30
    Single
    260W
    Standard
    600V
    60A
    600V
    2.3V
    400V, 30A, 10 Ω, 15V
    2.3V @ 15V, 30A
    Trench Field Stop
    163nC
    120A
    45ns/189ns
    383μJ (on), 233μJ (off)
    20.1mm
    15.8mm
    5mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW10M65DF2
    STGW10M65DF2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    30 Weeks
    -
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    -
    STGW10
    -
    -
    Standard
    -
    -
    -
    -
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    Trench Field Stop
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    -
    -
    ROHS3 Compliant
    M
    115W
    96ns
    650V
    20A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGWT30V60F vs STGW10M65DF2
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    200W
    STGW20
    Single
    200W
    Standard
    600V
    60A
    600V
    2.5V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    -
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    PowerMESH™
    -
    44ns
    -
    -
    38.000013g
    SILICON
    e3
    3
    Tin (Sn)
    ULTRA FAST
    Insulated Gate BIP Transistors
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    N-CHANNEL
    100 ns
    42.5 ns
    30A
    280 ns
    20V
    5.75V
    No SVHC
    Lead Free
    -
    -
    -
    STGWT30V60F vs STGW20NC60VD
  • STGW19NC60HD
    STGW19NC60HD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    140W
    STGW19
    Single
    -
    Standard
    600V
    42A
    600V
    -
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    -
    -
    -
    No
    ROHS3 Compliant
    PowerMESH™
    140W
    31 ns
    -
    -
    -
    SILICON
    -
    3
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    3
    1
    25 ns
    POWER CONTROL
    -
    N-CHANNEL
    144 ns
    32 ns
    -
    272 ns
    20V
    5.75V
    -
    Lead Free
    Tin
    R-PSFM-T3
    TO-247AC
    STGWT30V60F vs STGW19NC60HD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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