STMicroelectronics STGWF40V60DF

Name: STGWF40V60DF
Brand: STMicroelectronics
SKU: 3554868-STGWF40V60DF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGWF40V60DF

Manufacturer:: STMicroelectronics

Ventron No:: 3554868-STGWF40V60DF

Description:: IGBT BIPO 600V 40A TO3P

ECAD Model:

Datasheet:: STGWF40V60DF

Specifications

STMicroelectronics STGWF40V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWF40V60DF.

Factory Lead Time
40 Weeks
Mounting Type
Through Hole
Package / Case
TO-3PFM, SC-93-3
Operating Temperature
175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Base Part Number
STGWF40
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
IGBT Type
Trench Field Stop
Switching Energy
456μJ (on), 411μJ (off)
RoHS Status
ROHS3 Compliant

Description

STGWF40V60DF Description
STGWF40V60DF is manufactured by STMicroelectronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Body electronics & lighting Communications equipment Wired networking Personal electronics Connected peripherals & printers. And the main parameters of this part are IGBT BIPO 600V 40A TO3P. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).

STGWF40V60DF Features
Manufactured by STMicroelectronics Belong to Electronic Components ICS IGBT BIPO 600V 40A TO3P Green and compliant with RoHS

STGWF40V60DF Applications
Automotive Body electronics & lighting Communications equipment Wired networking Personal electronics Connected peripherals & printers

STGWF40V60DF More Descriptions

IGBT Transistors IGBT & Power Bipolar
IGBT BIPO 600V 40A TO3P
CAP CER 3.3UF 25V X7R 1206
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to STGWF40V60DF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Input Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

IGBT Type

Switching Energy

RoHS Status

Mount

Number of Pins

ECCN Code

Subcategory

Max Power Dissipation

Element Configuration

Power Dissipation

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

Height

Length

Width

Radiation Hardening

Lifecycle Status

Contact Plating

Transistor Element Material

Series

Number of Terminations

Pin Count

JESD-30 Code

Number of Elements

Turn On Delay Time

Power - Max

Transistor Application

Turn-Off Delay Time

Reverse Recovery Time

JEDEC-95 Code

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Thr Voltage-Max

Lead Free

Weight

JESD-609 Code

Pbfree Code

Terminal Finish

Voltage - Rated DC

Current Rating

Rise Time

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

Input Capacitance

Continuous Collector Current

REACH SVHC

View Compare
STGWF40V60DF

STMicroelectronics

40 Weeks

Through Hole

TO-3PFM, SC-93-3

175°C TJ

Tube

Active

Not Applicable

STGWF40

Standard

600V

40A

Trench Field Stop

456μJ (on), 411μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW40V60DLF

STMicroelectronics

20 Weeks

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

STGW40

Standard

-

-

Trench Field Stop

411μJ (off)

ROHS3 Compliant

Through Hole

3

EAR99

Insulated Gate BIP Transistors

283W

Single

283W

N-CHANNEL

600V

80A

600V

2.35V

400V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

226nC

160A

-/208ns

20V

20.15mm

15.75mm

5.15mm

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGWF40V60DF vs STGW40V60DLF
STGW19NC60HD

STMicroelectronics

8 Weeks

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

Active

1 (Unlimited)

STGW19

Standard

-

-

-

85μJ (on), 189μJ (off)

ROHS3 Compliant

Through Hole

-

EAR99

Insulated Gate BIP Transistors

140W

Single

-

N-CHANNEL

600V

42A

600V

-

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

53nC

60A

25ns/97ns

20V

-

-

-

No

ACTIVE (Last Updated: 8 months ago)

Tin

SILICON

PowerMESH™

3

3

R-PSFM-T3

1

25 ns

140W

POWER CONTROL

144 ns

31 ns

TO-247AC

32 ns

272 ns

5.75V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

STGWF40V60DF vs STGW19NC60HD
STGW40NC60WD

STMicroelectronics

-

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

STGW40

Standard

-

-

-

302μJ (on), 349μJ (off)

ROHS3 Compliant

Through Hole

3

EAR99

Insulated Gate BIP Transistors

250W

Single

250W

N-CHANNEL

600V

70A

600V

2.1V

390V, 30A, 10 Ω, 15V

2.5V @ 15V, 30A

126nC

230A

33ns/168ns

20V

20.15mm

15.75mm

5.15mm

No

-

-

SILICON

PowerMESH™

3

3

-

1

33 ns

-

POWER CONTROL

168 ns

45 ns

TO-247AC

46 ns

280 ns

5.75V

Lead Free

38.000013g

e3

yes

Tin (Sn)

600V

40A

12ns

650V

40A

2.9nF

40A

No SVHC

STGWF40V60DF vs STGW40NC60WD