STMicroelectronics STGWA45HF60WDI

Name: STGWA45HF60WDI
Brand: STMicroelectronics
SKU: 3587237-STGWA45HF60WDI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGWA45HF60WDI

Manufacturer:: STMicroelectronics

Ventron No:: 3587237-STGWA45HF60WDI

Description:: IGBT 600V 80A 310W TO247

ECAD Model:

Datasheet:: STGWA45HF60WDI

Specifications

STMicroelectronics STGWA45HF60WDI technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWA45HF60WDI.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
310W
Base Part Number
STGW45
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
30 ns
Power - Max
310W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
145 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
90 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Test Condition
400V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 30A
Gate Charge
160nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
-/145ns
Switching Energy
330μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGWA45HF60WDI Description

STGWA45HF60WDI is a kind of ultra fast IGBT with low drop diode, which is designed with more stable switching performance and lower conduction losses based on a new advanced planar technology. Due to its reliable performance and specific characteristics, it is well suitable for high switching frequency operation (over 100 kHz).

STGWA45HF60WDI Features

Energy saving
Low drive power
Low saturation voltage drop
Easy installation and maintenance
Stable heat dissipation

STGWA45HF60WDI Applications

Welding
Induction heating
Resonant converters
Switching power supplies

STGWA45HF60WDI More Descriptions

45 A, 600 V ultrafast IGBT with low drop diode
STGWA45HF60WDI Series 600 V 50 A Flange Mount Ultra Fast IGBT - TO-247
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247
Trans IGBT Chip N-CH 600V 80A 3-Pin(3 Tab) TO-247 Tube
IGBT Transistors 45A 600V Ultra Fast IGBT

Product Comparison

The three parts on the right have similar specifications to STGWA45HF60WDI.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Input Type

Turn On Delay Time

Power - Max

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Series

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

IGBT Type

Number of Pins

Power Dissipation

Height

Length

Width

Contact Plating

JEDEC-95 Code

Turn On Time

Turn Off Time-Nom (toff)

View Compare
STGWA45HF60WDI

STMicroelectronics

Through Hole

Through Hole

TO-247-3

6.500007g

SILICON

-55°C~150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Insulated Gate BIP Transistors

310W

STGW45

3

R-PSFM-T3

1

Single

Standard

30 ns

310W

POWER CONTROL

N-CHANNEL

145 ns

600V

80A

90 ns

600V

1.9V

400V, 30A, 4.7 Ω, 15V

2.5V @ 15V, 30A

160nC

150A

-/145ns

330μJ (off)

20V

5.75V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW10M65DF2

STMicroelectronics

-

Through Hole

TO-247-3

-

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

-

-

-

-

STGW10

-

-

-

-

Standard

-

115W

-

-

-

-

-

96ns

-

-

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

28nC

40A

19ns/91ns

120μJ (on), 270μJ (off)

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

30 Weeks

M

650V

20A

Trench Field Stop

-

-

-

-

-

-

-

-

-

STGWA45HF60WDI vs STGW10M65DF2
STGW40V60DF

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

EAR99

-

-

283W

STGW40

-

-

-

Single

Standard

-

-

-

-

-

600V

80A

41ns

600V

2.35V

400V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

226nC

160A

52ns/208ns

456μJ (on), 411μJ (off)

-

-

No

ROHS3 Compliant

Lead Free

-

20 Weeks

-

-

-

Trench Field Stop

3

283W

20.15mm

15.75mm

5.15mm

-

-

-

-

STGWA45HF60WDI vs STGW40V60DF
STGW19NC60HD

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

-

Active

1 (Unlimited)

3

EAR99

-

Insulated Gate BIP Transistors

140W

STGW19

3

R-PSFM-T3

1

Single

Standard

25 ns

140W

POWER CONTROL

N-CHANNEL

144 ns

600V

42A

31 ns

600V

-

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

53nC

60A

25ns/97ns

85μJ (on), 189μJ (off)

20V

5.75V

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

8 Weeks

PowerMESH™

-

-

-

-

-

-

-

-

Tin

TO-247AC

32 ns

272 ns

STGWA45HF60WDI vs STGW19NC60HD