STMicroelectronics STGWA40M120DF3
- Part Number:
- STGWA40M120DF3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854533-STGWA40M120DF3
- Description:
- IGBT 1200V 80A 468W TO-247-3
- Datasheet:
- STGWA40M120DF3
STMicroelectronics STGWA40M120DF3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWA40M120DF3.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation468W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGWA40
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max468W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current80A
- Reverse Recovery Time355 ns
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage1.85V
- Test Condition600V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
- IGBT TypeTrench Field Stop
- Gate Charge125nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C35ns/140ns
- Switching Energy1.03mJ (on), 480μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
STGWA40M120DF3 Description
The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The STGWA40M120DF3 is part of the M family of IGBTs, which provide the best performance tradeoff for inverter systems where low-loss and short-circuit capability are critical. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also result in a safer paralleling operation.
STGWA40M120DF3 Features
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery anti-parallel diode
10μs Short-circuit withstand time
STGWA40M120DF3 Applications
Industrial drives
UPS
Solar
Welding
turning shafts
The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The STGWA40M120DF3 is part of the M family of IGBTs, which provide the best performance tradeoff for inverter systems where low-loss and short-circuit capability are critical. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also result in a safer paralleling operation.
STGWA40M120DF3 Features
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery anti-parallel diode
10μs Short-circuit withstand time
STGWA40M120DF3 Applications
Industrial drives
UPS
Solar
Welding
turning shafts
STGWA40M120DF3 More Descriptions
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3 Tab) TO-247 Tube
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3 Tab) TO-247 Tube
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
The three parts on the right have similar specifications to STGWA40M120DF3.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRoHS StatusPower DissipationRadiation HardeningHeightLengthWidthLead FreeView Compare
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STGWA40M120DF3ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors468WNOT SPECIFIEDNOT SPECIFIEDSTGWA40SingleStandard468WN-CHANNEL1.2kV80A355 ns1.2kV1200V1.85V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop125nC160A35ns/140ns1.03mJ (on), 480μJ (off)20V7VNo SVHCROHS3 Compliant-------
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--Through HoleThrough HoleTO-247-3---40°C~175°C TJTubeObsoleteNot ApplicableEAR99-260W--STGW30SingleStandard--600V60A110 ns600V-2.4V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30ATrench Field Stop105nC120A50ns/160ns350μJ (on), 400μJ (off)---ROHS3 Compliant260WNo----
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-20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)EAR99-283W--STGW40SingleStandard--600V80A41ns600V-2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)---ROHS3 Compliant283WNo20.15mm15.75mm5.15mmLead Free
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ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors468WNOT SPECIFIEDNOT SPECIFIEDSTGW40SingleStandard468WN-CHANNEL1.2kV80A355 ns1.2kV1200V1.85V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)20V7VNo SVHCROHS3 Compliant-----Lead Free
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