STGW50NC60W

STMicroelectronics STGW50NC60W

Part Number:
STGW50NC60W
Manufacturer:
STMicroelectronics
Ventron No:
2854528-STGW50NC60W
Description:
IGBT 600V 100A 285W TO247
ECAD Model:
Datasheet:
STGW50NC60W

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Specifications
STMicroelectronics STGW50NC60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW50NC60W.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    285W
  • Base Part Number
    STGW50
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    285W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    100A
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    69 ns
  • Test Condition
    390V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    343 ns
  • Gate Charge
    195nC
  • Td (on/off) @ 25°C
    52ns/240ns
  • Switching Energy
    365μJ (on), 560μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGW50NC60W Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high-frequency applications.

STGW50NC60W Features Very high-frequency inverters, UPS HF, SMPS, and PFC in both hard switch and resonant topologies Motor drivers Welding

STGW50NC60W Applications Very high-frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)

STGW50NC60W More Descriptions
Trans IGBT Chip N-CH 600V 100A 3-Pin(3 Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
IC CLK BUFFER 6:6 80MHZ 20SOIC
Product Comparison
The three parts on the right have similar specifications to STGW50NC60W.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Lifecycle Status
    Number of Pins
    ECCN Code
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Reverse Recovery Time
    Collector Emitter Saturation Voltage
    Continuous Collector Current
    Current - Collector Pulsed (Icm)
    REACH SVHC
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    Pbfree Code
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Input Capacitance
    View Compare
  • STGW50NC60W
    STGW50NC60W
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    Insulated Gate BIP Transistors
    285W
    STGW50
    3
    R-PSFM-T3
    1
    Single
    Standard
    285W
    POWER CONTROL
    N-CHANNEL
    600V
    100A
    600V
    69 ns
    390V, 40A, 10 Ω, 15V
    2.6V @ 15V, 40A
    343 ns
    195nC
    52ns/240ns
    365μJ (on), 560μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW20NC60VD
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    Insulated Gate BIP Transistors
    200W
    STGW20
    3
    -
    1
    Single
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    60A
    600V
    42.5 ns
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    280 ns
    100nC
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    8 Weeks
    ACTIVE (Last Updated: 8 months ago)
    3
    EAR99
    ULTRA FAST
    600V
    30A
    200W
    31 ns
    11.5ns
    100 ns
    44ns
    2.5V
    30A
    150A
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40M120DF3
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    Insulated Gate BIP Transistors
    468W
    STGW40
    -
    -
    -
    Single
    Standard
    468W
    -
    N-CHANNEL
    1.2kV
    80A
    1.2kV
    -
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    125nC
    35ns/140ns
    1.5mJ (on), 2.25mJ (off)
    20V
    7V
    -
    -
    -
    -
    ROHS3 Compliant
    30 Weeks
    ACTIVE (Last Updated: 8 months ago)
    3
    EAR99
    -
    -
    -
    -
    -
    -
    -
    355 ns
    1.85V
    -
    160A
    No SVHC
    Lead Free
    NOT SPECIFIED
    NOT SPECIFIED
    1200V
    Trench Field Stop
    -
    -
    -
    -
    -
  • STGW40NC60WD
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    STGW40
    3
    -
    1
    Single
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    70A
    600V
    46 ns
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    280 ns
    126nC
    33ns/168ns
    302μJ (on), 349μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    -
    -
    3
    EAR99
    -
    600V
    40A
    250W
    33 ns
    12ns
    168 ns
    45 ns
    2.1V
    40A
    230A
    No SVHC
    Lead Free
    -
    -
    -
    -
    yes
    650V
    40A
    TO-247AC
    2.9nF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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