STMicroelectronics STGW50NC60W
- Part Number:
- STGW50NC60W
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854528-STGW50NC60W
- Description:
- IGBT 600V 100A 285W TO247
- Datasheet:
- STGW50NC60W
STMicroelectronics STGW50NC60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW50NC60W.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation285W
- Base Part NumberSTGW50
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max285W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current100A
- Collector Emitter Breakdown Voltage600V
- Turn On Time69 ns
- Test Condition390V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 40A
- Turn Off Time-Nom (toff)343 ns
- Gate Charge195nC
- Td (on/off) @ 25°C52ns/240ns
- Switching Energy365μJ (on), 560μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGW50NC60W Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH? IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very high-frequency applications.
STGW50NC60W Features Very high-frequency inverters, UPS HF, SMPS, and PFC in both hard switch and resonant topologies Motor drivers Welding
STGW50NC60W Applications Very high-frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)
STGW50NC60W Features Very high-frequency inverters, UPS HF, SMPS, and PFC in both hard switch and resonant topologies Motor drivers Welding
STGW50NC60W Applications Very high-frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)
STGW50NC60W More Descriptions
Trans IGBT Chip N-CH 600V 100A 3-Pin(3 Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
IC CLK BUFFER 6:6 80MHZ 20SOIC
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
IC CLK BUFFER 6:6 80MHZ 20SOIC
The three parts on the right have similar specifications to STGW50NC60W.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeTd (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeLifecycle StatusNumber of PinsECCN CodeAdditional FeatureVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeReverse Recovery TimeCollector Emitter Saturation VoltageContinuous Collector CurrentCurrent - Collector Pulsed (Icm)REACH SVHCLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Voltage - Collector Emitter Breakdown (Max)IGBT TypePbfree CodeDrain to Source Voltage (Vdss)Continuous Drain Current (ID)JEDEC-95 CodeInput CapacitanceView Compare
-
STGW50NC60WThrough HoleThrough HoleTO-247-338.000013gSILICON-55°C~150°C TJTubePowerMESH™e3Obsolete1 (Unlimited)3Tin (Sn)Insulated Gate BIP Transistors285WSTGW503R-PSFM-T31SingleStandard285WPOWER CONTROLN-CHANNEL600V100A600V69 ns390V, 40A, 10 Ω, 15V2.6V @ 15V, 40A343 ns195nC52ns/240ns365μJ (on), 560μJ (off)20V5.75V20.15mm15.75mm5.15mmNoROHS3 Compliant---------------------------
-
Through HoleThrough HoleTO-247-338.000013gSILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3Tin (Sn)Insulated Gate BIP Transistors200WSTGW203-1SingleStandard-POWER CONTROLN-CHANNEL600V60A600V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns100nC31ns/100ns220μJ (on), 330μJ (off)20V5.75V20.15mm15.75mm5.15mmNoROHS3 Compliant8 WeeksACTIVE (Last Updated: 8 months ago)3EAR99ULTRA FAST600V30A200W31 ns11.5ns100 ns44ns2.5V30A150ANo SVHCLead Free---------
-
Through HoleThrough HoleTO-247-338.000013g--55°C~175°C TJTube--Active1 (Unlimited)--Insulated Gate BIP Transistors468WSTGW40---SingleStandard468W-N-CHANNEL1.2kV80A1.2kV-600V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-125nC35ns/140ns1.5mJ (on), 2.25mJ (off)20V7V----ROHS3 Compliant30 WeeksACTIVE (Last Updated: 8 months ago)3EAR99-------355 ns1.85V-160ANo SVHCLead FreeNOT SPECIFIEDNOT SPECIFIED1200VTrench Field Stop-----
-
Through HoleThrough HoleTO-247-338.000013gSILICON-55°C~150°C TJTubePowerMESH™e3Obsolete1 (Unlimited)3Tin (Sn)Insulated Gate BIP Transistors250WSTGW403-1SingleStandard-POWER CONTROLN-CHANNEL600V70A600V46 ns390V, 30A, 10 Ω, 15V2.5V @ 15V, 30A280 ns126nC33ns/168ns302μJ (on), 349μJ (off)20V5.75V20.15mm15.75mm5.15mmNoROHS3 Compliant--3EAR99-600V40A250W33 ns12ns168 ns45 ns2.1V40A230ANo SVHCLead Free----yes650V40ATO-247AC2.9nF
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 October 2023
TIP122 Darlington Transistor: Symbol, Features, Applications and More
Ⅰ. What is Darlington tube?Ⅱ. Overview of TIP122 transistorⅢ. Symbol and footprint of TIP122 transistorⅣ. Technical parameters of TIP122 transistorⅤ. What are the features of TIP122 transistor?Ⅵ. Pin... -
19 October 2023
LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR
Ⅰ. Overview of LM3900NⅡ. Symbol and footprint of LM3900NⅢ. Technical parameters of LM3900NⅣ. What are the features of LM3900N?Ⅴ. Pin configuration of LM3900NⅥ. Circuit and working principle of... -
20 October 2023
TNY268PN Switcher: Symbol, Features, Manufacturer and Applications
Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What... -
20 October 2023
A Comprehensive Introduction to MJE2955T Transistor
Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.