STMicroelectronics STGW45NC60WD
- Part Number:
- STGW45NC60WD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494361-STGW45NC60WD
- Description:
- IGBT 600V 90A 285W TO247
- Datasheet:
- STGW45NC60WD
STMicroelectronics STGW45NC60WD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW45NC60WD.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation285W
- Base Part NumberSTGW45
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max285W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current90A
- Reverse Recovery Time45 ns
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage600V
- Turn On Time46 ns
- Test Condition390V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 30A
- Turn Off Time-Nom (toff)280 ns
- Gate Charge126nC
- Current - Collector Pulsed (Icm)230A
- Td (on/off) @ 25°C33ns/168ns
- Switching Energy302μJ (on), 349μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height21.09mm
- Length16.03mm
- Width5.16mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TPS27S100BPWPR Description
The TPS27S100BPWPR is a single-channel high-side switch with an integrated NMOS and charge pump that is fully protected. Intelligent load control is enabled by full diagnostics and high-accuracy current-monitoring features. The overall system's reliability is considerably improved by an adjustable current-limit function. Both digital fault status and analog current monitor output are supported by the TPS27S100BPWPR diagnostic reporting. It stands out from the competition thanks to its accurate current monitor and adjustable current limit.
TPS27S100BPWPR Features 80-mΩ Single-channel High-side switch with full diagnostics
– TPS27S100A: Open-drain status output – TPS27S100B: Current monitor analog output Wide operating voltage 3.5 V to 40 V
Very-low standby current, <0.5 μA
Operating junction temperature, –40 to 150°C
Input control, 3.3-V and 5-V logic compatible
High-accuracy current monitor, ±30 mA at 1 A
Adjustable current limit (0.5-A to 6-A) with an external resistor, ±20% at 0.5 A
Diagnostic enable the function for multiplexing of MCU, analog or digital interface
Excellent ESD protection on IN and OUT pins
– ±16 kV IEC 61000-4-2 ESD contact discharge – ±4 kV IEC 61000-4-4 Electrical fast transient – ±1.0 kV/42 Ω IEC 61000-4-5 Surge Protection
– Overload and short-circuit-to-GND protection – Inductive load negative voltage clamp – Undervoltage lockout (UVLO) protection – Thermal shutdown and swing with self-recovery – Loss of GND protection Diagnostic
– On- and Off-State output Open-Load / short to supply detection
– Overload and short to ground detection – Thermal shutdown and swing detection Thermally-Enhanced 14-Pin PWP or 16-Pin QFN package
TPS27S100BPWPR Applications Programmable logic controller
Building automation
Telecom/networks
TPS27S100BPWPR Features 80-mΩ Single-channel High-side switch with full diagnostics
– TPS27S100A: Open-drain status output – TPS27S100B: Current monitor analog output Wide operating voltage 3.5 V to 40 V
Very-low standby current, <0.5 μA
Operating junction temperature, –40 to 150°C
Input control, 3.3-V and 5-V logic compatible
High-accuracy current monitor, ±30 mA at 1 A
Adjustable current limit (0.5-A to 6-A) with an external resistor, ±20% at 0.5 A
Diagnostic enable the function for multiplexing of MCU, analog or digital interface
Excellent ESD protection on IN and OUT pins
– ±16 kV IEC 61000-4-2 ESD contact discharge – ±4 kV IEC 61000-4-4 Electrical fast transient – ±1.0 kV/42 Ω IEC 61000-4-5 Surge Protection
– Overload and short-circuit-to-GND protection – Inductive load negative voltage clamp – Undervoltage lockout (UVLO) protection – Thermal shutdown and swing with self-recovery – Loss of GND protection Diagnostic
– On- and Off-State output Open-Load / short to supply detection
– Overload and short to ground detection – Thermal shutdown and swing detection Thermally-Enhanced 14-Pin PWP or 16-Pin QFN package
TPS27S100BPWPR Applications Programmable logic controller
Building automation
Telecom/networks
STGW45NC60WD More Descriptions
Trans IGBT Chip N-CH 600V 90A 3-Pin(3 Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBTs Insulated Gate Bipolar Transistor PowerMESH IGBT
IGBT Transistors PowerMESH IGBT
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBTs Insulated Gate Bipolar Transistor PowerMESH IGBT
IGBT Transistors PowerMESH IGBT
The three parts on the right have similar specifications to STGW45NC60WD.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)IGBT TypePower DissipationCollector Emitter Saturation VoltageNumber of PinsView Compare
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STGW45NC60WDThrough HoleThrough HoleTO-247-338.000013gSILICON-55°C~150°C TJTubePowerMESH™e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Insulated Gate BIP Transistors285WSTGW453R-PSFM-T31SingleStandard285WPOWER CONTROLN-CHANNEL600V90A45 nsTO-247AC600V46 ns390V, 30A, 10 Ω, 15V2.6V @ 15V, 30A280 ns126nC230A33ns/168ns302μJ (on), 349μJ (off)20V5.75V21.09mm16.03mm5.16mmNoROHS3 CompliantLead Free---------
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-Through HoleTO-247-3---55°C~175°C TJTubeM--Active1 (Unlimited)-----STGW10----Standard115W----96ns---400V, 10A, 22 Ω, 15V2V @ 15V, 10A-28nC40A19ns/91ns120μJ (on), 270μJ (off)------ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)30 Weeks650V20ATrench Field Stop---
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Through HoleThrough HoleTO-247-3---40°C~175°C TJTube---ObsoleteNot Applicable-EAR99--260WSTGW30---SingleStandard---600V60A110 ns-600V-400V, 30A, 10 Ω, 15V2.4V @ 15V, 30A-105nC120A50ns/160ns350μJ (on), 400μJ (off)-----NoROHS3 Compliant-----Trench Field Stop260W2.4V-
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Through HoleThrough HoleTO-247-3---55°C~175°C TJTube---Active1 (Unlimited)-EAR99-Insulated Gate BIP Transistors283WSTGW40---SingleStandard--N-CHANNEL600V80A--600V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-226nC160A-/208ns411μJ (off)20V-20.15mm15.75mm5.15mmNoROHS3 Compliant--20 Weeks--Trench Field Stop283W2.35V3
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