Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW30V60F
STGW30V60F

STMicroelectronics STGW30V60F

Part Number:
STGW30V60F
Manufacturer:
STMicroelectronics
Ventron No:
3587160-STGW30V60F
Description:
IGBT 600V 60A 260W TO247
ECAD Model:
Datasheet:
STGW30V60F

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STGW30V60F technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30V60F.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    260W
  • Base Part Number
    STGW30
  • Element Configuration
    Single
  • Power Dissipation
    260W
  • Input Type
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.3V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    163nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    45ns/189ns
  • Switching Energy
    383μJ (on), 233μJ (off)
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGW30V60F Description
STGW30V60F is a member of the V series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-247 package to save board space. 

STGW30V60F Features
Low conduction and switching losses A slightly positive VCE(sat) temperature coefficient  Very tight parameter distribution Supplied in the TO-247 package High speed switching series

STGW30V60F Applications
Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters
STGW30V60F More Descriptions
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-247 Tube
TRANSISTOR, IGBT, 600V, 60A, TO-247; Available until stocks are exhausted
Product Comparison
The three parts on the right have similar specifications to STGW30V60F.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Series
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Subcategory
    Polarity/Channel Type
    Gate-Emitter Voltage-Max
    Weight
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Turn-Off Delay Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Lead Free
    View Compare
  • STGW30V60F
    STGW30V60F
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    260W
    STGW30
    Single
    260W
    Standard
    600V
    60A
    600V
    2.3V
    400V, 30A, 10 Ω, 15V
    2.3V @ 15V, 30A
    Trench Field Stop
    163nC
    120A
    45ns/189ns
    383μJ (on), 233μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW10M65DF2
    STGW10M65DF2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    30 Weeks
    -
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    -
    STGW10
    -
    -
    Standard
    -
    -
    -
    -
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    Trench Field Stop
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    -
    -
    ROHS3 Compliant
    M
    115W
    96ns
    650V
    20A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW30V60F vs STGW10M65DF2
  • STGW40V60DLF
    STGW40V60DLF
    STMicroelectronics
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    283W
    STGW40
    Single
    283W
    Standard
    600V
    80A
    600V
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    226nC
    160A
    -/208ns
    411μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    Insulated Gate BIP Transistors
    N-CHANNEL
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW30V60F vs STGW40V60DLF
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    200W
    STGW20
    Single
    200W
    Standard
    600V
    60A
    600V
    2.5V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    -
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    PowerMESH™
    -
    44ns
    -
    -
    Insulated Gate BIP Transistors
    N-CHANNEL
    20V
    38.000013g
    SILICON
    e3
    3
    Tin (Sn)
    ULTRA FAST
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    100 ns
    42.5 ns
    30A
    280 ns
    5.75V
    No SVHC
    Lead Free
    STGW30V60F vs STGW20NC60VD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for STGW30V60F
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.