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STGW30NC60WD

STMicroelectronics STGW30NC60WD

Part Number:
STGW30NC60WD
Manufacturer:
STMicroelectronics
Ventron No:
2495478-STGW30NC60WD
Description:
IGBT 600V 60A 200W TO247
ECAD Model:
Datasheet:
STGW30NC60WD

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Specifications
STMicroelectronics STGW30NC60WD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30NC60WD.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    200W
  • Current Rating
    60A
  • Base Part Number
    STGW30
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Turn On Delay Time
    29.5 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    12ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    118 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    40 ns
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.1V
  • Turn On Time
    42.5 ns
  • Test Condition
    390V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    189 ns
  • Gate Charge
    102nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    29.5ns/118ns
  • Switching Energy
    305μJ (on), 181μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW30NC60WD Description
The STMicroelectronics STGW30NC60WD IGBT utilizes the advanced Power MESH? process resulting in an excellent trade-off between switching performance and low on-state behaviour.

STGW30NC60WD Features
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra-fast recovery antiparallel diode
High-frequency operation

STGW30NC60WD Applications
HF, SMPS and PFC in both hard switch and resonant topologies
High-frequency motor controls, inverters, UPS
STGW30NC60WD More Descriptions
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3 Tab) TO-247 Tube
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
Igbt, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW30NC60WD
STGW30NC60WD,IGBT Ultrafast 600V 30A
IGBT Transistors PowerMESH" IGBT
200W 60A 600V TO-247AC-3 IGBTs ROHS
Product Comparison
The three parts on the right have similar specifications to STGW30NC60WD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    IGBT Type
    Weight
    Additional Feature
    Continuous Collector Current
    Pbfree Code
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Input Capacitance
    View Compare
  • STGW30NC60WD
    STGW30NC60WD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    600V
    200W
    60A
    STGW30
    3
    1
    Single
    200W
    ISOLATED
    Standard
    29.5 ns
    POWER CONTROL
    12ns
    N-CHANNEL
    118 ns
    600V
    60A
    40 ns
    TO-247AC
    600V
    2.1V
    42.5 ns
    390V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    189 ns
    102nC
    150A
    29.5ns/118ns
    305μJ (on), 181μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DF
    STGW40V60DF
    STMicroelectronics
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    283W
    -
    STGW40
    -
    -
    Single
    283W
    -
    Standard
    -
    -
    -
    -
    -
    600V
    80A
    41ns
    -
    600V
    2.35V
    -
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    226nC
    160A
    52ns/208ns
    456μJ (on), 411μJ (off)
    -
    -
    20.15mm
    15.75mm
    5.15mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    STGW30NC60WD vs STGW40V60DF
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    600V
    200W
    30A
    STGW20
    3
    1
    Single
    200W
    -
    Standard
    31 ns
    POWER CONTROL
    11.5ns
    N-CHANNEL
    100 ns
    600V
    60A
    44ns
    -
    600V
    2.5V
    42.5 ns
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    280 ns
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    38.000013g
    ULTRA FAST
    30A
    -
    -
    -
    -
    STGW30NC60WD vs STGW20NC60VD
  • STGW40NC60WD
    STGW40NC60WD
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    600V
    250W
    40A
    STGW40
    3
    1
    Single
    250W
    -
    Standard
    33 ns
    POWER CONTROL
    12ns
    N-CHANNEL
    168 ns
    600V
    70A
    45 ns
    TO-247AC
    600V
    2.1V
    46 ns
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    280 ns
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    38.000013g
    -
    40A
    yes
    650V
    40A
    2.9nF
    STGW30NC60WD vs STGW40NC60WD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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