STMicroelectronics STGW30NC60VD
- Part Number:
- STGW30NC60VD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2495689-STGW30NC60VD
- Description:
- IGBT 600V 80A 250W TO247
- ECAD Model:
-
- Datasheet:
- STGW30NC60VD
STMicroelectronics STGW30NC60VD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30NC60VD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Base Part NumberSTGW30
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250W
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Rise Time11ns
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- Reverse Recovery Time44ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
- Turn On Time42.5 ns
- Test Condition390V, 20A, 3.3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Turn Off Time-Nom (toff)280 ns
- Gate Charge100nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C31ns/100ns
- Switching Energy220μJ (on), 330μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height21.07mm
- Length16.02mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGW30NC60VD Description
STGW30NC60VD is a kind of very fast IGBT with an ultrafast diode that is provided by STMicrocontroller based on the advanced PowerMESH? technology. On the basis of this technology, both advanced switching performance and low on-state behavior can be achieved, making IGBT STGW30NC60VD ideally suited for resonant or soft switching applications.
STGW30NC60VD Features
Advanced switching performance
Low on-state behavior
Low on-voltage drop (VCE(sat))
Soft ultra-fast recovery anti-parallel diode
Available in the TO-247 package
STGW30NC60VD Applications
High-frequency inverters, UPS
Motor drive
SMPS and PFC in both hard switch and resonant topologies
STGW30NC60VD is a kind of very fast IGBT with an ultrafast diode that is provided by STMicrocontroller based on the advanced PowerMESH? technology. On the basis of this technology, both advanced switching performance and low on-state behavior can be achieved, making IGBT STGW30NC60VD ideally suited for resonant or soft switching applications.
STGW30NC60VD Features
Advanced switching performance
Low on-state behavior
Low on-voltage drop (VCE(sat))
Soft ultra-fast recovery anti-parallel diode
Available in the TO-247 package
STGW30NC60VD Applications
High-frequency inverters, UPS
Motor drive
SMPS and PFC in both hard switch and resonant topologies
STGW30NC60VD More Descriptions
Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3 Tab) TO-247 Tube
PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel
40 A, 600 V, very fast IGBT with Ultrafast diode
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3 Tab) TO-247 Tube
PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel
40 A, 600 V, very fast IGBT with Ultrafast diode
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
The three parts on the right have similar specifications to STGW30NC60VD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationInput TypeTransistor ApplicationRise TimePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusIGBT TypeLead FreeWeightPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxVoltage - Collector Emitter Breakdown (Max)REACH SVHCJESD-609 CodePbfree CodeTerminal FinishVoltage - Rated DCCurrent RatingTurn On Delay TimeDrain to Source Voltage (Vdss)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeInput CapacitanceContinuous Collector CurrentView Compare
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STGW30NC60VDACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubePowerMESH™Active1 (Unlimited)3EAR99Insulated Gate BIP Transistors250WSTGW3031Single250WStandardPOWER CONTROL11nsN-CHANNEL600V80A44ns600V2.5V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns100nC150A31ns/100ns220μJ (on), 330μJ (off)20V5.75V21.07mm16.02mm5.15mmNoROHS3 Compliant--------------------- -
-20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTube-Active1 (Unlimited)-EAR99-283WSTGW40--Single283WStandard---600V80A41ns600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-226nC160A52ns/208ns456μJ (on), 411μJ (off)--20.15mm15.75mm5.15mmNoROHS3 CompliantTrench Field StopLead Free------------------
-
ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTube-Active1 (Unlimited)-EAR99Insulated Gate BIP Transistors468WSTGW40--Single-Standard--N-CHANNEL1.2kV80A355 ns1.2kV1.85V-600V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)20V7V----ROHS3 CompliantTrench Field StopLead Free38.000013gNOT SPECIFIEDNOT SPECIFIED468W1200VNo SVHC------------
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--Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubePowerMESH™Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors250WSTGW4031Single250WStandardPOWER CONTROL12nsN-CHANNEL600V70A45 ns600V2.1V46 ns390V, 30A, 10 Ω, 15V2.5V @ 15V, 30A280 ns126nC230A33ns/168ns302μJ (on), 349μJ (off)20V5.75V20.15mm15.75mm5.15mmNoROHS3 Compliant-Lead Free38.000013g----No SVHCe3yesTin (Sn)600V40A33 ns650V168 ns40ATO-247AC2.9nF40A
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