STMicroelectronics STGW30H60DFB
- Part Number:
- STGW30H60DFB
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494647-STGW30H60DFB
- Description:
- IGBT 600V 60A 260W TO247
- ECAD Model:
-
- Datasheet:
- STGW30H60DFB
STMicroelectronics STGW30H60DFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30H60DFB.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation260W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGW30
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max260W
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time53 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.55V
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge149nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C37ns/146ns
- Switching Energy383μJ (on), 293μJ (off)
- Height20.15mm
- Length15.75mm
- Width5.15mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGW30H60DFB Description
These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.
STGW30H60DFB Features Maximum junction temperature: TJ = 175 °C High-speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode
STGW30H60DFB Applications Photovoltaic inverters High-frequency converters
STGW30H60DFB Features Maximum junction temperature: TJ = 175 °C High-speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode
STGW30H60DFB Applications Photovoltaic inverters High-frequency converters
STGW30H60DFB More Descriptions
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-247 Tube
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW30H60DFB
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-247 Tube
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW30H60DFB
The three parts on the right have similar specifications to STGW30H60DFB.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthRoHS StatusLead FreeLifecycle StatusSeriesVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power DissipationRadiation HardeningSubcategoryPolarity/Channel TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCView Compare
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STGW30H60DFB20 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeActive1 (Unlimited)EAR99260WNOT SPECIFIEDNOT SPECIFIEDSTGW30SingleStandard260W600V60A53 ns600V1.55V400V, 30A, 10 Ω, 15V2V @ 15V, 30ATrench Field Stop149nC120A37ns/146ns383μJ (on), 293μJ (off)20.15mm15.75mm5.15mmROHS3 CompliantLead Free------------ -
30 Weeks-Through HoleTO-247-3---55°C~175°C TJTubeActive1 (Unlimited)----STGW10-Standard115W--96ns--400V, 10A, 22 Ω, 15V2V @ 15V, 10ATrench Field Stop28nC40A19ns/91ns120μJ (on), 270μJ (off)---ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)M650V20A-------
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-Through HoleThrough HoleTO-247-3---40°C~175°C TJTubeObsoleteNot ApplicableEAR99260W--STGW30SingleStandard-600V60A110 ns600V2.4V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30ATrench Field Stop105nC120A50ns/160ns350μJ (on), 400μJ (off)---ROHS3 Compliant-----260WNo-----
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30 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeActive1 (Unlimited)EAR99468WNOT SPECIFIEDNOT SPECIFIEDSTGW40SingleStandard468W1.2kV80A355 ns1.2kV1.85V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)---ROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)-1200V---Insulated Gate BIP TransistorsN-CHANNEL20V7VNo SVHC
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