STMicroelectronics STGW20IH125DF
- Part Number:
- STGW20IH125DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3587229-STGW20IH125DF
- Description:
- IGBT 1250V 40A 259W TO-247
- Datasheet:
- STGW20IH125DF
STMicroelectronics STGW20IH125DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW20IH125DF.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time32 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation259W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGW20
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max259W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.25kV
- Max Collector Current40A
- Collector Emitter Breakdown Voltage1.25kV
- Voltage - Collector Emitter Breakdown (Max)1250V
- Collector Emitter Saturation Voltage2.55V
- Test Condition600V, 15A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
- Turn Off Time-Nom (toff)285 ns
- IGBT TypeTrench Field Stop
- Gate Charge68nC
- Current - Collector Pulsed (Icm)80A
- Td (on/off) @ 25°C-/106ns
- Switching Energy410μJ (off)
- RoHS StatusROHS3 Compliant
STGW20IH125DF Description
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. STGW20IH125DF Features
? Designed for soft commutation only ? Maximum junction temperature: TJ = 175 °C ? Minimized tail current ? VCE(sat) = 2.0 V (typ.) @ IC = 15 A ? Tight parameters distribution ? Safe paralleling ? Very low VF soft recovery co-packaged diode ? Low thermal resistance ? Lead free package
STGW20IH125DF Applications
? Induction heating ? Microwave oven ? Resonant converters
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. STGW20IH125DF Features
? Designed for soft commutation only ? Maximum junction temperature: TJ = 175 °C ? Minimized tail current ? VCE(sat) = 2.0 V (typ.) @ IC = 15 A ? Tight parameters distribution ? Safe paralleling ? Very low VF soft recovery co-packaged diode ? Low thermal resistance ? Lead free package
STGW20IH125DF Applications
? Induction heating ? Microwave oven ? Resonant converters
STGW20IH125DF More Descriptions
Igbt, 1.25Kv, 40A, 175Deg C, 259W Rohs Compliant: Yes |Stmicroelectronics STGW20IH125DF
1250 V, 20 A IH series trench gate field-stop IGBT
IGBT Transistors 1250V 20A trench gate field-stop IGBT
1250 V, 20 A IH series trench gate field-stop IGBT
IGBT Transistors 1250V 20A trench gate field-stop IGBT
The three parts on the right have similar specifications to STGW20IH125DF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusPower DissipationReverse Recovery TimeRadiation HardeningSubcategoryGate-Emitter Voltage-MaxHeightLengthWidthSeriesJESD-609 CodePbfree CodeTerminal FinishVoltage - Rated DCCurrent RatingPin CountTurn On Delay TimeRise TimeDrain to Source Voltage (Vdss)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeInput CapacitanceTurn On TimeContinuous Collector CurrentGate-Emitter Thr Voltage-MaxREACH SVHCLead FreeView Compare
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STGW20IH125DFACTIVE (Last Updated: 8 months ago)32 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-55°C~175°C TJTubeActive1 (Unlimited)3EAR99259WNOT SPECIFIEDNOT SPECIFIEDSTGW201SingleCOLLECTORStandard259WPOWER CONTROLN-CHANNEL1.25kV40A1.25kV1250V2.55V600V, 15A, 10 Ω, 15V2.5V @ 15V, 15A285 nsTrench Field Stop68nC80A-/106ns410μJ (off)ROHS3 Compliant----------------------------
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--Through HoleThrough HoleTO-247-3----40°C~175°C TJTubeObsoleteNot Applicable-EAR99260W--STGW30-Single-Standard---600V60A600V-2.4V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30A-Trench Field Stop105nC120A50ns/160ns350μJ (on), 400μJ (off)ROHS3 Compliant260W110 nsNo------------------------
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-20 WeeksThrough HoleThrough HoleTO-247-33---55°C~175°C TJTubeActive1 (Unlimited)-EAR99283W--STGW40-Single-Standard--N-CHANNEL600V80A600V-2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-Trench Field Stop226nC160A-/208ns411μJ (off)ROHS3 Compliant283W-NoInsulated Gate BIP Transistors20V20.15mm15.75mm5.15mm-------------------
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--Through HoleThrough HoleTO-247-3338.000013gSILICON-55°C~150°C TJTubeObsolete1 (Unlimited)3EAR99250W--STGW401Single-Standard-POWER CONTROLN-CHANNEL600V70A600V-2.1V390V, 30A, 10 Ω, 15V2.5V @ 15V, 30A280 ns-126nC230A33ns/168ns302μJ (on), 349μJ (off)ROHS3 Compliant250W45 nsNoInsulated Gate BIP Transistors20V20.15mm15.75mm5.15mmPowerMESH™e3yesTin (Sn)600V40A333 ns12ns650V168 ns40ATO-247AC2.9nF46 ns40A5.75VNo SVHCLead Free
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