STGW20IH125DF

STMicroelectronics STGW20IH125DF

Part Number:
STGW20IH125DF
Manufacturer:
STMicroelectronics
Ventron No:
3587229-STGW20IH125DF
Description:
IGBT 1250V 40A 259W TO-247
ECAD Model:
Datasheet:
STGW20IH125DF

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Specifications
STMicroelectronics STGW20IH125DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW20IH125DF.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    259W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGW20
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    259W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.25kV
  • Max Collector Current
    40A
  • Collector Emitter Breakdown Voltage
    1.25kV
  • Voltage - Collector Emitter Breakdown (Max)
    1250V
  • Collector Emitter Saturation Voltage
    2.55V
  • Test Condition
    600V, 15A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 15A
  • Turn Off Time-Nom (toff)
    285 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    68nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    -/106ns
  • Switching Energy
    410μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
STGW20IH125DF             Description
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.   STGW20IH125DF                Features
? Designed for soft commutation only ? Maximum junction temperature: TJ = 175 °C ? Minimized tail current ? VCE(sat) = 2.0 V (typ.) @ IC = 15 A ? Tight parameters distribution ? Safe paralleling ? Very low VF soft recovery co-packaged diode ? Low thermal resistance ? Lead free package
STGW20IH125DF               Applications
? Induction heating ? Microwave oven ? Resonant converters  
STGW20IH125DF More Descriptions
Igbt, 1.25Kv, 40A, 175Deg C, 259W Rohs Compliant: Yes |Stmicroelectronics STGW20IH125DF
1250 V, 20 A IH series trench gate field-stop IGBT
IGBT Transistors 1250V 20A trench gate field-stop IGBT
Product Comparison
The three parts on the right have similar specifications to STGW20IH125DF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Power Dissipation
    Reverse Recovery Time
    Radiation Hardening
    Subcategory
    Gate-Emitter Voltage-Max
    Height
    Length
    Width
    Series
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Pin Count
    Turn On Delay Time
    Rise Time
    Drain to Source Voltage (Vdss)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Input Capacitance
    Turn On Time
    Continuous Collector Current
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Lead Free
    View Compare
  • STGW20IH125DF
    STGW20IH125DF
    ACTIVE (Last Updated: 8 months ago)
    32 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    3
    EAR99
    259W
    NOT SPECIFIED
    NOT SPECIFIED
    STGW20
    1
    Single
    COLLECTOR
    Standard
    259W
    POWER CONTROL
    N-CHANNEL
    1.25kV
    40A
    1.25kV
    1250V
    2.55V
    600V, 15A, 10 Ω, 15V
    2.5V @ 15V, 15A
    285 ns
    Trench Field Stop
    68nC
    80A
    -/106ns
    410μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW30H60DF
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    -40°C~175°C TJ
    Tube
    Obsolete
    Not Applicable
    -
    EAR99
    260W
    -
    -
    STGW30
    -
    Single
    -
    Standard
    -
    -
    -
    600V
    60A
    600V
    -
    2.4V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    -
    Trench Field Stop
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    ROHS3 Compliant
    260W
    110 ns
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DLF
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    EAR99
    283W
    -
    -
    STGW40
    -
    Single
    -
    Standard
    -
    -
    N-CHANNEL
    600V
    80A
    600V
    -
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    Trench Field Stop
    226nC
    160A
    -/208ns
    411μJ (off)
    ROHS3 Compliant
    283W
    -
    No
    Insulated Gate BIP Transistors
    20V
    20.15mm
    15.75mm
    5.15mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40NC60WD
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    3
    EAR99
    250W
    -
    -
    STGW40
    1
    Single
    -
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    70A
    600V
    -
    2.1V
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    280 ns
    -
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    ROHS3 Compliant
    250W
    45 ns
    No
    Insulated Gate BIP Transistors
    20V
    20.15mm
    15.75mm
    5.15mm
    PowerMESH™
    e3
    yes
    Tin (Sn)
    600V
    40A
    3
    33 ns
    12ns
    650V
    168 ns
    40A
    TO-247AC
    2.9nF
    46 ns
    40A
    5.75V
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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