STMicroelectronics STGW19NC60WD

Name: STGW19NC60WD
Brand: STMicroelectronics
SKU: 2496354-STGW19NC60WD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGW19NC60WD

Manufacturer:: STMicroelectronics

Ventron No:: 2496354-STGW19NC60WD

Description:: IGBT 600V 42A 125W TO247

ECAD Model:

Datasheet:: STG(P,W)19NC60WD

Specifications

STMicroelectronics STGW19NC60WD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW19NC60WD.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
125W
Base Part Number
STGW19
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Rise Time
7ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
90 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
42A
Reverse Recovery Time
31ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Turn On Time
33 ns
Test Condition
390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 12A
Turn Off Time-Nom (toff)
204 ns
Gate Charge
53nC
Td (on/off) @ 25°C
25ns/90ns
Switching Energy
81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGW19NC60WD Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application.

STGW19NC60WD Features
High frequency operation
Low CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
ROHS3 Compliant
No SVHC
Lead Free

STGW19NC60WD Applications
High frequency motor controls
Inverters
UPS
HF, SMPS and PFC in both hard switch and resonant topologies
New Energy Vehicle
Photovoltaic Generation

STGW19NC60WD More Descriptions

STGW19NC60WD Series 600 V 23 A N-Channel Ultra Fast PowerMESH IGBT - TO-247
Trans IGBT Chip N-CH 600V 42A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT, N 600V 19A TO-247; DC Collector Current:42A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:125W;
French Electronic Distributor since 1988
STMICROELECTRONICS STGW19NC60WD IGBTS
IGBT, N 600V 19A TO-247; DC Collector Current: 42A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 125W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 22A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 125W; Pulsed Current Icm: 35A; Rise Time: 7ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

Product Comparison

The three parts on the right have similar specifications to STGW19NC60WD.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Lifecycle Status

Weight

Additional Feature

Voltage - Rated DC

Current Rating

Continuous Collector Current

Current - Collector Pulsed (Icm)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power - Max

Voltage - Collector Emitter Breakdown (Max)

IGBT Type

Pbfree Code

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

JEDEC-95 Code

Input Capacitance

View Compare
STGW19NC60WD

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Insulated Gate BIP Transistors

125W

STGW19

3

1

Single

125W

Standard

25 ns

POWER CONTROL

7ns

N-CHANNEL

90 ns

600V

42A

31ns

600V

2.5V

33 ns

390V, 12A, 10 Ω, 15V

2.5V @ 15V, 12A

204 ns

53nC

25ns/90ns

81μJ (on), 125μJ (off)

20V

5.75V

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW20NC60VD

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Insulated Gate BIP Transistors

200W

STGW20

3

1

Single

200W

Standard

31 ns

POWER CONTROL

11.5ns

N-CHANNEL

100 ns

600V

60A

44ns

600V

2.5V

42.5 ns

390V, 20A, 3.3 Ω, 15V

2.5V @ 15V, 20A

280 ns

100nC

31ns/100ns

220μJ (on), 330μJ (off)

20V

5.75V

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

8 Weeks

ACTIVE (Last Updated: 8 months ago)

38.000013g

ULTRA FAST

600V

30A

30A

150A

-

-

-

-

-

-

-

-

-

-

STGW19NC60WD vs STGW20NC60VD
STGW40M120DF3

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

-

-55°C~175°C TJ

Tube

-

-

Active

1 (Unlimited)

-

EAR99

-

Insulated Gate BIP Transistors

468W

STGW40

-

-

Single

-

Standard

-

-

-

N-CHANNEL

-

1.2kV

80A

355 ns

1.2kV

1.85V

-

600V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

-

125nC

35ns/140ns

1.5mJ (on), 2.25mJ (off)

20V

7V

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

30 Weeks

ACTIVE (Last Updated: 8 months ago)

38.000013g

-

-

-

-

160A

NOT SPECIFIED

NOT SPECIFIED

468W

1200V

Trench Field Stop

-

-

-

-

-

STGW19NC60WD vs STGW40M120DF3
STGW40NC60WD

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Insulated Gate BIP Transistors

250W

STGW40

3

1

Single

250W

Standard

33 ns

POWER CONTROL

12ns

N-CHANNEL

168 ns

600V

70A

45 ns

600V

2.1V

46 ns

390V, 30A, 10 Ω, 15V

2.5V @ 15V, 30A

280 ns

126nC

33ns/168ns

302μJ (on), 349μJ (off)

20V

5.75V

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

38.000013g

-

600V

40A

40A

230A

-

-

-

-

-

yes

650V

40A

TO-247AC

2.9nF

STGW19NC60WD vs STGW40NC60WD