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STGB14NC60KDT4

STMicroelectronics STGB14NC60KDT4

Part Number:
STGB14NC60KDT4
Manufacturer:
STMicroelectronics
Ventron No:
3554823-STGB14NC60KDT4
Description:
IGBT 600V 25A 80W D2PAK
ECAD Model:
Datasheet:
STGB14NC60KDT4

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Specifications
STMicroelectronics STGB14NC60KDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB14NC60KDT4.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerMESH™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    80W
  • Current Rating
    25A
  • Base Part Number
    STGB14
  • Element Configuration
    Single
  • Power Dissipation
    80W
  • Input Type
    Standard
  • Rise Time
    8.5ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    25A
  • Reverse Recovery Time
    37 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.1V
  • Max Breakdown Voltage
    600V
  • Test Condition
    390V, 7A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 7A
  • Gate Charge
    34.4nC
  • Current - Collector Pulsed (Icm)
    50A
  • Td (on/off) @ 25°C
    22.5ns/116ns
  • Switching Energy
    82μJ (on), 155μJ (off)
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGB14NC60KDT4 Description

The STGB14NC60KDT4 device is very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
STGB14NC60KDT4 Features

● Low on voltage drop (VCE(sat))
● Low Cres / Cies ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery antiparallel diode
● Short-circuit withstand time 10 μs
● ROHS3 Compliant
● Lead Free
STGB14NC60KDT4 Applications

● High frequency inverters
● SMPS and PFC in both hard switch and resonant topologies
● Motor drives
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
STGB14NC60KDT4 More Descriptions
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2 Tab) D2PAK T/R
14 A, 600 V short-circuit rugged IGBT
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT, N-CHANNEL 600V 25A, D2PAK
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
Igbt |Stmicroelectronics STGB14NC60KDT4
IGBT Transistors PowerMESH" IGBT
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
Product Comparison
The three parts on the right have similar specifications to STGB14NC60KDT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Rise Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Case Connection
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    IGBT Type
    Gate-Emitter Thr Voltage-Max
    View Compare
  • STGB14NC60KDT4
    STGB14NC60KDT4
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    Active
    1 (Unlimited)
    600V
    80W
    25A
    STGB14
    Single
    80W
    Standard
    8.5ns
    600V
    25A
    37 ns
    600V
    2.1V
    600V
    390V, 7A, 10 Ω, 15V
    2.5V @ 15V, 7A
    34.4nC
    50A
    22.5ns/116ns
    82μJ (on), 155μJ (off)
    4.6mm
    10.4mm
    9.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB18N40LZT4
    STGB18N40LZT4
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, PowerMESH™
    Active
    1 (Unlimited)
    -
    150W
    -
    STGB18
    Single
    -
    Logic
    -
    360V
    30A
    -
    420V
    1.35V
    420V
    300V, 10A, 5V
    1.7V @ 4.5V, 10A
    29nC
    40A
    650ns/13.5μs
    -
    4.6mm
    10.4mm
    9.35mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    SILICON
    e3
    2
    EAR99
    VOLTAGE CLAMPING
    Insulated Gate BIP Transistors
    GULL WING
    4
    R-PSSO-G2
    1
    COLLECTOR
    650 ns
    150W
    AUTOMOTIVE IGNITION
    N-CHANNEL
    13.5 μs
    4450 ns
    22200 ns
    16V
    No SVHC
    -
    -
    -
    -
    STGB14NC60KDT4 vs STGB18N40LZT4
  • STGB20N40LZ
    STGB20N40LZ
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, PowerMESH™
    Active
    1 (Unlimited)
    -
    150W
    -
    STGB20
    Single
    150W
    Logic
    -
    425V
    25A
    -
    390V
    1.5V
    390V
    300V, 10A, 1k Ω, 5V
    1.6V @ 4V, 6A
    24nC
    40A
    700ns/4.3μs
    -
    4.6mm
    10.4mm
    9.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    EAR99
    -
    -
    -
    -
    -
    -
    -
    700 ns
    -
    -
    -
    4.3 μs
    -
    -
    -
    -
    -
    -
    -
    -
    STGB14NC60KDT4 vs STGB20N40LZ
  • STGB30H60DLFB
    STGB30H60DLFB
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    Active
    1 (Unlimited)
    -
    260W
    -
    STGB30
    -
    -
    Standard
    -
    2V
    60A
    -
    600V
    -
    600V
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    149nC
    120A
    -/146ns
    393μJ (off)
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    EAR99
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    -
    -
    260W
    -
    N-CHANNEL
    -
    -
    -
    20V
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Trench Field Stop
    7V
    STGB14NC60KDT4 vs STGB30H60DLFB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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