STMicroelectronics STGB30H60DFB
- Part Number:
- STGB30H60DFB
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854898-STGB30H60DFB
- Description:
- TRENCH GATE FIELD-STOP IGBT, HB
- Datasheet:
- STGB30H60DFB
STMicroelectronics STGB30H60DFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30H60DFB.
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Power Dissipation260W
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGB30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max260W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current60A
- Reverse Recovery Time53 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time51.1 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- Turn Off Time-Nom (toff)223 ns
- IGBT TypeTrench Field Stop
- Gate Charge149nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C37ns/146ns
- Switching Energy383μJ (on), 293μJ (off)
- RoHS StatusROHS3 Compliant
Description: The STGB30H60DFB is a single Trench Gate Field-Stop IGBT from STMicroelectronics. It is a high-power device with a maximum collector current of 30A and a maximum collector-emitter voltage of 600V. It is housed in a TO-247 package.
Features:
- High power device with a maximum collector current of 30A and a maximum collector-emitter voltage of 600V
- Trench Gate Field-Stop IGBT technology for improved switching performance
- Low on-state voltage drop for improved efficiency
- Low gate charge for reduced switching losses
- Low thermal resistance for improved heat dissipation
- Housed in a TO-247 package for easy mounting
Applications: The STGB30H60DFB is suitable for a wide range of applications, including motor control, power supplies, UPS systems, and solar inverters. It is also suitable for use in automotive and industrial applications.
Features:
- High power device with a maximum collector current of 30A and a maximum collector-emitter voltage of 600V
- Trench Gate Field-Stop IGBT technology for improved switching performance
- Low on-state voltage drop for improved efficiency
- Low gate charge for reduced switching losses
- Low thermal resistance for improved heat dissipation
- Housed in a TO-247 package for easy mounting
Applications: The STGB30H60DFB is suitable for a wide range of applications, including motor control, power supplies, UPS systems, and solar inverters. It is also suitable for use in automotive and industrial applications.
STGB30H60DFB More Descriptions
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2 Tab) D2PAK T/R
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB30H60DFB
IGBT, 600V, 60A, 175DEG C, 260W;
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB30H60DFB
IGBT, 600V, 60A, 175DEG C, 260W;
The three parts on the right have similar specifications to STGB30H60DFB.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLifecycle StatusNumber of PinsSeriesElement ConfigurationPower DissipationTurn On Delay TimeTurn-Off Delay TimeCollector Emitter Saturation VoltageHeightLengthWidthRadiation HardeningLead FreeJESD-609 CodeTerminal FinishSubcategoryCurrent RatingPin CountContinuous Drain Current (ID)Gate-Emitter Thr Voltage-MaxWeightView Compare
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STGB30H60DFB20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)2EAR99260WSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDSTGB30R-PSSO-G21SINGLE WITH BUILT-IN DIODECOLLECTORStandard260WPOWER CONTROLN-CHANNEL2V60A53 ns600V600V51.1 ns400V, 30A, 10 Ω, 15V2V @ 15V, 30A223 nsTrench Field Stop149nC120A37ns/146ns383μJ (on), 293μJ (off)ROHS3 Compliant----------------------
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8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJCut Tape (CT)Active1 (Unlimited)-EAR99150W----STGB20----Logic---425V25A-390V390V-300V, 10A, 1k Ω, 5V1.6V @ 4V, 6A--24nC40A700ns/4.3μs-ROHS3 CompliantACTIVE (Last Updated: 7 months ago)3Automotive, AEC-Q101, PowerMESH™Single150W700 ns4.3 μs1.5V4.6mm10.4mm9.35mmNoLead Free--------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)2EAR99200W-GULL WING24530STGB20R-PSSO-G21-COLLECTORStandard-POWER CONTROLN-CHANNEL375V40A-425V425V2900 ns250V, 20A, 1k Ω, 4.5V2V @ 4.5V, 20A15000 ns-51nC80A2.3μs/2μs11.8mJ (off)ROHS3 Compliant-3PowerMESH™Single200W2.3 μs2 μs2V---NoLead Freee3Matte Tin (Sn)Insulated Gate BIP Transistors20A320A2V-
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20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJCut Tape (CT)Active1 (Unlimited)-EAR99115W--NOT SPECIFIEDNOT SPECIFIEDSTGB10----Standard115W--600V20A107 ns600V600V-400V, 10A, 10 Ω, 15V1.95V @ 15V, 10A-Trench Field Stop57nC40A19.5ns/103ns83μJ (on), 140μJ (off)ROHS3 CompliantACTIVE (Last Updated: 7 months ago)3-Single---1.5V4.6mm10.4mm9.35mm---------2.000002g
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