STGB30H60DFB

STMicroelectronics STGB30H60DFB

Part Number:
STGB30H60DFB
Manufacturer:
STMicroelectronics
Ventron No:
2854898-STGB30H60DFB
Description:
TRENCH GATE FIELD-STOP IGBT, HB
ECAD Model:
Datasheet:
STGB30H60DFB

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Specifications
STMicroelectronics STGB30H60DFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30H60DFB.
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Power Dissipation
    260W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGB30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    260W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    53 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Max Breakdown Voltage
    600V
  • Turn On Time
    51.1 ns
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    223 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    149nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    37ns/146ns
  • Switching Energy
    383μJ (on), 293μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
Description: The STGB30H60DFB is a single Trench Gate Field-Stop IGBT from STMicroelectronics. It is a high-power device with a maximum collector current of 30A and a maximum collector-emitter voltage of 600V. It is housed in a TO-247 package.

Features:
- High power device with a maximum collector current of 30A and a maximum collector-emitter voltage of 600V
- Trench Gate Field-Stop IGBT technology for improved switching performance
- Low on-state voltage drop for improved efficiency
- Low gate charge for reduced switching losses
- Low thermal resistance for improved heat dissipation
- Housed in a TO-247 package for easy mounting

Applications: The STGB30H60DFB is suitable for a wide range of applications, including motor control, power supplies, UPS systems, and solar inverters. It is also suitable for use in automotive and industrial applications.
STGB30H60DFB More Descriptions
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2 Tab) D2PAK T/R
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB30H60DFB
IGBT, 600V, 60A, 175DEG C, 260W;
Product Comparison
The three parts on the right have similar specifications to STGB30H60DFB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Lifecycle Status
    Number of Pins
    Series
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    JESD-609 Code
    Terminal Finish
    Subcategory
    Current Rating
    Pin Count
    Continuous Drain Current (ID)
    Gate-Emitter Thr Voltage-Max
    Weight
    View Compare
  • STGB30H60DFB
    STGB30H60DFB
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    2
    EAR99
    260W
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    STGB30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    260W
    POWER CONTROL
    N-CHANNEL
    2V
    60A
    53 ns
    600V
    600V
    51.1 ns
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    223 ns
    Trench Field Stop
    149nC
    120A
    37ns/146ns
    383μJ (on), 293μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB20N40LZ
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    Active
    1 (Unlimited)
    -
    EAR99
    150W
    -
    -
    -
    -
    STGB20
    -
    -
    -
    -
    Logic
    -
    -
    -
    425V
    25A
    -
    390V
    390V
    -
    300V, 10A, 1k Ω, 5V
    1.6V @ 4V, 6A
    -
    -
    24nC
    40A
    700ns/4.3μs
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 7 months ago)
    3
    Automotive, AEC-Q101, PowerMESH™
    Single
    150W
    700 ns
    4.3 μs
    1.5V
    4.6mm
    10.4mm
    9.35mm
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB20NB37LZT4
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    2
    EAR99
    200W
    -
    GULL WING
    245
    30
    STGB20
    R-PSSO-G2
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    375V
    40A
    -
    425V
    425V
    2900 ns
    250V, 20A, 1k Ω, 4.5V
    2V @ 4.5V, 20A
    15000 ns
    -
    51nC
    80A
    2.3μs/2μs
    11.8mJ (off)
    ROHS3 Compliant
    -
    3
    PowerMESH™
    Single
    200W
    2.3 μs
    2 μs
    2V
    -
    -
    -
    No
    Lead Free
    e3
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    20A
    3
    20A
    2V
    -
  • STGB10H60DF
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    Active
    1 (Unlimited)
    -
    EAR99
    115W
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    STGB10
    -
    -
    -
    -
    Standard
    115W
    -
    -
    600V
    20A
    107 ns
    600V
    600V
    -
    400V, 10A, 10 Ω, 15V
    1.95V @ 15V, 10A
    -
    Trench Field Stop
    57nC
    40A
    19.5ns/103ns
    83μJ (on), 140μJ (off)
    ROHS3 Compliant
    ACTIVE (Last Updated: 7 months ago)
    3
    -
    Single
    -
    -
    -
    1.5V
    4.6mm
    10.4mm
    9.35mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2.000002g
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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