STMicroelectronics STGB10NB37LZT4
- Part Number:
- STGB10NB37LZT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3554794-STGB10NB37LZT4
- Description:
- IGBT 440V 20A 125W D2PAK
- ECAD Model:
-
- Datasheet:
- STGB10NB37LZT4
STMicroelectronics STGB10NB37LZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB10NB37LZT4.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Mounting TypeSurface Mount
- Number of Pins3
- Transistor Element MaterialSILICON
- SeriesPowerMESH™
- PackagingTape & Reel (TR)
- Operating Temperature-65°C~175°C TJ
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureVOLTAGE CLAMPING
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation125W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTGB10
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation125W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationAUTOMOTIVE IGNITION
- Rise Time340ns
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)440V
- Max Collector Current20A
- Collector Emitter Breakdown Voltage440V
- Max Breakdown Voltage440V
- Turn On Time860 ns
- Test Condition328V, 10A, 1k Ω, 5V
- Vce(on) (Max) @ Vge, Ic1.8V @ 4.5V, 10A
- Turn Off Time-Nom (toff)17800 ns
- Gate Charge28nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C1.3μs/8μs
- Switching Energy2.4mJ (on), 5mJ (off)
- Gate-Emitter Thr Voltage-Max2.4V
- Height4.6mm
- Length10.4mm
- Width9.35mm
- RoHS StatusROHS3 Compliant
- Radiation HardeningNo
- Lead FreeLead Free
STGB10NB37LZT4 Description
STGB10NB37LZT4 IGBT employs the most advanced technology that results in a superior tradeoff between switching speed and low on-state behavior. The collector-gate built into the Zener has a precise active clamping, while it emits the gate. Zener offers ESD protection.
STGB10NB37LZT4 Features
Low threshold voltage
Low on-voltage drop
Low gate charge
High current capability
High voltage clamping feature
STGB10NB37LZT4 Applications
Automotive ignition
STGB10NB37LZT4 IGBT employs the most advanced technology that results in a superior tradeoff between switching speed and low on-state behavior. The collector-gate built into the Zener has a precise active clamping, while it emits the gate. Zener offers ESD protection.
STGB10NB37LZT4 Features
Low threshold voltage
Low on-voltage drop
Low gate charge
High current capability
High voltage clamping feature
STGB10NB37LZT4 Applications
Automotive ignition
STGB10NB37LZT4 More Descriptions
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2 Tab) D2PAK T/R
Igbt, Aec-Q101, 18V, 20A, 175Deg C, 125W Rohs Compliant: Yes |Stmicroelectronics STGB10NB37LZT4
10 A - 410 V internally clamped IGBT
Insulated Gate Bipolar Transistor, 20A I(C), 375V V(BR)CES, N-Channel, TO-263AB
IGBT, N-CHANNEL 20A CLAMP, D2PAK
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
IGBT 410V 10A int.clamped D2PAK
IC FIFO ASYNCH 1KX9 35NS 28SOIC
Igbt, Aec-Q101, 18V, 20A, 175Deg C, 125W Rohs Compliant: Yes |Stmicroelectronics STGB10NB37LZT4
10 A - 410 V internally clamped IGBT
Insulated Gate Bipolar Transistor, 20A I(C), 375V V(BR)CES, N-Channel, TO-263AB
IGBT, N-CHANNEL 20A CLAMP, D2PAK
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
IGBT 410V 10A int.clamped D2PAK
IC FIFO ASYNCH 1KX9 35NS 28SOIC
The three parts on the right have similar specifications to STGB10NB37LZT4.
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ImagePart NumberManufacturerFactory Lead TimeMountPackage / CaseMounting TypeNumber of PinsTransistor Element MaterialSeriesPackagingOperating TemperatureJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationRise TimePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxHeightLengthWidthRoHS StatusRadiation HardeningLead FreeCollector Emitter Saturation VoltageTerminal PositionConfigurationPower - MaxReverse Recovery TimeIGBT TypeLifecycle StatusGate-Emitter Voltage-MaxView Compare
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STGB10NB37LZT48 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSurface Mount3SILICONPowerMESH™Tape & Reel (TR)-65°C~175°C TJe3yesActive1 (Unlimited)2EAR99Matte Tin (Sn) - annealedVOLTAGE CLAMPINGInsulated Gate BIP Transistors125WGULL WING24520A30STGB103R-PSSO-G21Single125WCOLLECTORStandardAUTOMOTIVE IGNITION340nsN-CHANNEL440V20A440V440V860 ns328V, 10A, 1k Ω, 5V1.8V @ 4.5V, 10A17800 ns28nC40A1.3μs/8μs2.4mJ (on), 5mJ (off)2.4V4.6mm10.4mm9.35mmROHS3 CompliantNoLead Free--------- -
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSurface Mount3SILICONPowerMESH™Tube-65°C~175°C TJe3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn) - annealedVOLTAGE CLAMPINGInsulated Gate BIP Transistors125WGULL WING245-30STGB103R-PSSO-G21Single125WCOLLECTORStandardAUTOMOTIVE IGNITION-N-CHANNEL1.8V20A440V-860 ns328V, 10A, 1k Ω, 5V1.8V @ 4.5V, 10A17800 ns28nC40A1.3μs/8μs2.4mJ (on), 5mJ (off)2.4V4.6mm10.4mm9.35mmROHS3 CompliantNo-1.2V-------
-
20 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSurface Mount-SILICON-Tape & Reel (TR)-55°C~175°C TJ--Active1 (Unlimited)2EAR99---260WGULL WINGNOT SPECIFIED-NOT SPECIFIEDSTGB30-R-PSSO-G21--COLLECTORStandardPOWER CONTROL-N-CHANNEL2V60A600V600V51.1 ns400V, 30A, 10 Ω, 15V2V @ 15V, 30A223 ns149nC120A37ns/146ns383μJ (on), 293μJ (off)----ROHS3 Compliant---SINGLESINGLE WITH BUILT-IN DIODE260W53 nsTrench Field Stop--
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20 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSurface Mount---Tape & Reel (TR)-55°C~175°C TJ--Active1 (Unlimited)-EAR99--Insulated Gate BIP Transistors260W-NOT SPECIFIED-NOT SPECIFIEDSTGB30------Standard--N-CHANNEL2V60A600V600V-400V, 30A, 10 Ω, 15V2V @ 15V, 30A-149nC120A-/146ns393μJ (off)7V---ROHS3 Compliant-----260W-Trench Field StopACTIVE (Last Updated: 7 months ago)20V
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