STMicroelectronics STGB10H60DF
- Part Number:
- STGB10H60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854864-STGB10H60DF
- Description:
- IGBT 600V 20A 115W D2PAK
- ECAD Model:
-
- Datasheet:
- STGB10H60DF
STMicroelectronics STGB10H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB10H60DF.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight2.000002g
- Operating Temperature-55°C~175°C TJ
- PackagingCut Tape (CT)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation115W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGB10
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max115W
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current20A
- Reverse Recovery Time107 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage600V
- Test Condition400V, 10A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 10A
- IGBT TypeTrench Field Stop
- Gate Charge57nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C19.5ns/103ns
- Switching Energy83μJ (on), 140μJ (off)
- Height4.6mm
- Length10.4mm
- Width9.35mm
- RoHS StatusROHS3 Compliant
STGB10H60DF Description
If your circuit has strong currents flowing through it, this STMicroelectronics STGB10H60DF IGBT transistor is ideal. It has a collector-emitter voltage of 600 V at its highest. It can dissipate up to 115000 mW of power. During shipment, this component will be encased in tape and reel packing to ensure safe delivery and enable quick mounting after delivery. It's only made in one configuration. This IGBT transistor can operate at temperatures as low as -55°C and as high as 175°C. Field stop|trench technology was used to create this device.
STGB10H60DF Features
Safe paralleling
Short-circuit rated
High-speed switching
Low thermal resistance
Tight parameters distribution
Ultrafast soft recovery antiparallel diode
STGB10H60DF Applications
UPS
PFC
Static relays
Light dimmer
Motor control
Electronic ignition
If your circuit has strong currents flowing through it, this STMicroelectronics STGB10H60DF IGBT transistor is ideal. It has a collector-emitter voltage of 600 V at its highest. It can dissipate up to 115000 mW of power. During shipment, this component will be encased in tape and reel packing to ensure safe delivery and enable quick mounting after delivery. It's only made in one configuration. This IGBT transistor can operate at temperatures as low as -55°C and as high as 175°C. Field stop|trench technology was used to create this device.
STGB10H60DF Features
Safe paralleling
Short-circuit rated
High-speed switching
Low thermal resistance
Tight parameters distribution
Ultrafast soft recovery antiparallel diode
STGB10H60DF Applications
UPS
PFC
Static relays
Light dimmer
Motor control
Electronic ignition
STGB10H60DF More Descriptions
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(2 Tab) D2PAK T/R
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
IGBT 600V 10A Trench Field-Stop D2PAK
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB10H60DF
IC PWR SWITCH N-CHAN 1:1 8MSOP
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
IGBT 600V 10A Trench Field-Stop D2PAK
Short-circuit rugged IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB10H60DF
IC PWR SWITCH N-CHAN 1:1 8MSOP
The three parts on the right have similar specifications to STGB10H60DF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthRoHS StatusSeriesVoltage - Rated DCCurrent RatingPower DissipationRise TimeRadiation HardeningLead FreeContact PlatingTransistor Element MaterialJESD-609 CodeNumber of TerminationsAdditional FeatureSubcategoryTerminal FormPin CountJESD-30 CodeNumber of ElementsCase ConnectionTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxREACH SVHCView Compare
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STGB10H60DFACTIVE (Last Updated: 7 months ago)20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB32.000002g-55°C~175°C TJCut Tape (CT)Active1 (Unlimited)EAR99115WNOT SPECIFIEDNOT SPECIFIEDSTGB10SingleStandard115W600V20A107 ns600V1.5V600V400V, 10A, 10 Ω, 15V1.95V @ 15V, 10ATrench Field Stop57nC40A19.5ns/103ns83μJ (on), 140μJ (off)4.6mm10.4mm9.35mmROHS3 Compliant--------------------------- -
ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)-80W--STGB14SingleStandard-600V25A37 ns600V2.1V600V390V, 7A, 10 Ω, 15V2.5V @ 15V, 7A-34.4nC50A22.5ns/116ns82μJ (on), 155μJ (off)4.6mm10.4mm9.35mmROHS3 CompliantPowerMESH™600V25A80W8.5nsNoLead Free-------------------
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ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)EAR99150W--STGB18SingleLogic150W360V30A-420V1.35V420V300V, 10A, 5V1.7V @ 4.5V, 10A-29nC40A650ns/13.5μs-4.6mm10.4mm9.35mmROHS3 CompliantAutomotive, AEC-Q101, PowerMESH™----NoLead FreeTinSILICONe32VOLTAGE CLAMPINGInsulated Gate BIP TransistorsGULL WING4R-PSSO-G21COLLECTOR650 nsAUTOMOTIVE IGNITIONN-CHANNEL13.5 μs4450 ns22200 ns16VNo SVHC
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ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJCut Tape (CT)Active1 (Unlimited)EAR99150W--STGB20SingleLogic-425V25A-390V1.5V390V300V, 10A, 1k Ω, 5V1.6V @ 4V, 6A-24nC40A700ns/4.3μs-4.6mm10.4mm9.35mmROHS3 CompliantAutomotive, AEC-Q101, PowerMESH™--150W-NoLead Free-----------700 ns--4.3 μs----
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