STMicroelectronics STGB20N40LZ
- Part Number:
- STGB20N40LZ
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854911-STGB20N40LZ
- Description:
- IGBT 390V 25A 150W D2PAK
- Datasheet:
- STGB20N40LZ
STMicroelectronics STGB20N40LZ technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB20N40LZ.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101, PowerMESH™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation150W
- Base Part NumberSTGB20
- Element ConfigurationSingle
- Power Dissipation150W
- Input TypeLogic
- Turn On Delay Time700 ns
- Turn-Off Delay Time4.3 μs
- Collector Emitter Voltage (VCEO)425V
- Max Collector Current25A
- Collector Emitter Breakdown Voltage390V
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage390V
- Test Condition300V, 10A, 1k Ω, 5V
- Vce(on) (Max) @ Vge, Ic1.6V @ 4V, 6A
- Gate Charge24nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C700ns/4.3μs
- Height4.6mm
- Length10.4mm
- Width9.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGB20N40LZ Description
STGB20N40LZ developed by STMicroelectronics is a type of application-specific IGBT specifically optimized for automotive applications. It is designed based on the most advanced PowerMESH? technology to obtain low saturation voltage and high pulsed current capability. Overvoltage protection capabilities are provided by the built-in Zener diodes between gate collector and gate emitter. Moreover, it is capable of delivering low on-state voltage drop and low threshold drive, making it well suited for use in automotive ignition systems.
STGB20N40LZ Features
Low on-state voltage drop Low threshold drive Low saturation voltage High pulsed current capability Package: D2PAK
STGB20N40LZ Applications
Pencil coil electronic ignition driver
STGB20N40LZ developed by STMicroelectronics is a type of application-specific IGBT specifically optimized for automotive applications. It is designed based on the most advanced PowerMESH? technology to obtain low saturation voltage and high pulsed current capability. Overvoltage protection capabilities are provided by the built-in Zener diodes between gate collector and gate emitter. Moreover, it is capable of delivering low on-state voltage drop and low threshold drive, making it well suited for use in automotive ignition systems.
STGB20N40LZ Features
Low on-state voltage drop Low threshold drive Low saturation voltage High pulsed current capability Package: D2PAK
STGB20N40LZ Applications
Pencil coil electronic ignition driver
STGB20N40LZ More Descriptions
Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2 Tab) D2PAK T/R
STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
Automotive-grade internally clamped IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK
STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
Automotive-grade internally clamped IGBT, D2PAK, Tape and ReelSTMicroelectronics SCT
IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK
The three parts on the right have similar specifications to STGB20N40LZ.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationBase Part NumberElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CHeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingTransistor Element MaterialJESD-609 CodeNumber of TerminationsAdditional FeatureSubcategoryTerminal FormPin CountJESD-30 CodeNumber of ElementsCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxREACH SVHCPbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Rise TimeSwitching EnergyGate-Emitter Thr Voltage-MaxContinuous Drain Current (ID)View Compare
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STGB20N40LZACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, PowerMESH™Active1 (Unlimited)EAR99150WSTGB20Single150WLogic700 ns4.3 μs425V25A390V1.5V390V300V, 10A, 1k Ω, 5V1.6V @ 4V, 6A24nC40A700ns/4.3μs4.6mm10.4mm9.35mmNoROHS3 CompliantLead Free----------------------------
-
ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, PowerMESH™Active1 (Unlimited)EAR99150WSTGB18Single-Logic650 ns13.5 μs360V30A420V1.35V420V300V, 10A, 5V1.7V @ 4.5V, 10A29nC40A650ns/13.5μs4.6mm10.4mm9.35mmNoROHS3 CompliantLead FreeTinSILICONe32VOLTAGE CLAMPINGInsulated Gate BIP TransistorsGULL WING4R-PSSO-G21COLLECTOR150WAUTOMOTIVE IGNITIONN-CHANNEL4450 ns22200 ns16VNo SVHC---------
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-8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-65°C~175°C TJTape & Reel (TR)PowerMESH™Active1 (Unlimited)EAR99125WSTGB10Single125WStandard--440V20A440V-440V328V, 10A, 1k Ω, 5V1.8V @ 4.5V, 10A28nC40A1.3μs/8μs4.6mm10.4mm9.35mmNoROHS3 CompliantLead Free-SILICONe32VOLTAGE CLAMPINGInsulated Gate BIP TransistorsGULL WING3R-PSSO-G21COLLECTOR-AUTOMOTIVE IGNITIONN-CHANNEL860 ns17800 ns--yesMatte Tin (Sn) - annealed24520A30340ns2.4mJ (on), 5mJ (off)2.4V-
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)PowerMESH™Obsolete1 (Unlimited)EAR99200WSTGB20Single200WStandard2.3 μs2 μs375V40A425V2V425V250V, 20A, 1k Ω, 4.5V2V @ 4.5V, 20A51nC80A2.3μs/2μs---NoROHS3 CompliantLead Free-SILICONe32-Insulated Gate BIP TransistorsGULL WING3R-PSSO-G21COLLECTOR-POWER CONTROLN-CHANNEL2900 ns15000 ns---Matte Tin (Sn)24520A30-11.8mJ (off)2V20A
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