STMicroelectronics STGB30H60DLFB

Name: STGB30H60DLFB
Brand: STMicroelectronics
SKU: 2854890-STGB30H60DLFB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGB30H60DLFB

Manufacturer:: STMicroelectronics

Ventron No:: 2854890-STGB30H60DLFB

Description:: TRENCH GATE FIELD-STOP IGBT, HB

ECAD Model:

Datasheet:: STGB30H60DLFB

Specifications

STMicroelectronics STGB30H60DLFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30H60DLFB.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
260W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGB30
Input Type
Standard
Power - Max
260W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
149nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
-/146ns
Switching Energy
393μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
RoHS Status
ROHS3 Compliant

Description

STGB30H60DLFB Description
These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGB30H60DLFB Features ? Designed for soft commutation only ? Maximum junction temperature: TJ = 175 °C ? High speed switching series ? Minimized tail current ? VCE(sat) = 1.55 V (typ.) @ IC = 30 A ? Low VF soft recovery co-packaged diode ? Tight parameters distribution ? Safe paralleling ? Low thermal resistance ? Lead free package STGB30H60DLFB Applications ? Microwave oven ? Resonant converters

STGB30H60DLFB More Descriptions

HB Series 600 V 60 A 260 W Surface Mount Trench Gate Field-Stop IGBT - D2PAK-3
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2 Tab) D2PAK T/R
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Product Comparison

The three parts on the right have similar specifications to STGB30H60DLFB.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Number of Pins

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Additional Feature

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Collector Emitter Saturation Voltage

Turn On Time

Turn Off Time-Nom (toff)

Height

Length

Width

Radiation Hardening

Current Rating

Rise Time

Lead Free

Turn On Delay Time

Turn-Off Delay Time

Continuous Drain Current (ID)

View Compare
STGB30H60DLFB

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

20 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

260W

NOT SPECIFIED

NOT SPECIFIED

STGB30

Standard

260W

N-CHANNEL

2V

60A

600V

600V

400V, 30A, 10 Ω, 15V

2V @ 15V, 30A

Trench Field Stop

149nC

120A

-/146ns

393μJ (off)

20V

7V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGB10NB37LZ

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-65°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

125W

245

30

STGB10

Standard

-

N-CHANNEL

1.8V

20A

440V

-

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

-

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

-

2.4V

ROHS3 Compliant

3

SILICON

PowerMESH™

e3

yes

2

Matte Tin (Sn) - annealed

VOLTAGE CLAMPING

GULL WING

3

R-PSSO-G2

1

Single

125W

COLLECTOR

AUTOMOTIVE IGNITION

1.2V

860 ns

17800 ns

4.6mm

10.4mm

9.35mm

No

-

-

-

-

-

-

STGB30H60DLFB vs STGB10NB37LZ
STGB10NB37LZT4

STMicroelectronics

-

8 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-65°C~175°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

125W

245

30

STGB10

Standard

-

N-CHANNEL

440V

20A

440V

440V

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

-

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

-

2.4V

ROHS3 Compliant

3

SILICON

PowerMESH™

e3

yes

2

Matte Tin (Sn) - annealed

VOLTAGE CLAMPING

GULL WING

3

R-PSSO-G2

1

Single

125W

COLLECTOR

AUTOMOTIVE IGNITION

-

860 ns

17800 ns

4.6mm

10.4mm

9.35mm

No

20A

340ns

Lead Free

-

-

-

STGB30H60DLFB vs STGB10NB37LZT4
STGB20NB37LZT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

EAR99

Insulated Gate BIP Transistors

200W

245

30

STGB20

Standard

-

N-CHANNEL

375V

40A

425V

425V

250V, 20A, 1k Ω, 4.5V

2V @ 4.5V, 20A

-

51nC

80A

2.3μs/2μs

11.8mJ (off)

-

2V

ROHS3 Compliant

3

SILICON

PowerMESH™

e3

-

2

Matte Tin (Sn)

-

GULL WING

3

R-PSSO-G2

1

Single

200W

COLLECTOR

POWER CONTROL

2V

2900 ns

15000 ns

-

-

-

No

20A

-

Lead Free

2.3 μs

2 μs

20A

STGB30H60DLFB vs STGB20NB37LZT4