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STGB20NB37LZT4

STMicroelectronics STGB20NB37LZT4

Part Number:
STGB20NB37LZT4
Manufacturer:
STMicroelectronics
Ventron No:
2854877-STGB20NB37LZT4
Description:
IGBT 425V 40A 200W D2PAK
ECAD Model:
Datasheet:
STGB20NB37LZT4

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Specifications
STMicroelectronics STGB20NB37LZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB20NB37LZT4.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    200W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STGB20
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    2.3 μs
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    2 μs
  • Collector Emitter Voltage (VCEO)
    375V
  • Max Collector Current
    40A
  • Continuous Drain Current (ID)
    20A
  • Collector Emitter Breakdown Voltage
    425V
  • Collector Emitter Saturation Voltage
    2V
  • Max Breakdown Voltage
    425V
  • Turn On Time
    2900 ns
  • Test Condition
    250V, 20A, 1k Ω, 4.5V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 4.5V, 20A
  • Turn Off Time-Nom (toff)
    15000 ns
  • Gate Charge
    51nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    2.3μs/2μs
  • Switching Energy
    11.8mJ (off)
  • Gate-Emitter Thr Voltage-Max
    2V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGB20NB37LZT4 Description
The STGB20NB37LZT4 is an internally clamped PowerMESH? IGBT based on a patented strip arrangement and uses the most recent high voltage technology. The PowerMESH? IGBT, a cutting-edge family of IGBTs from STMicroelectronics, boasts exceptional performance. The gate-emitter Zener provides ESD protection while the built-in collector-gate Zener displays extremely precise active clamping.

STGB20NB37LZT4 Features
Low gate charge
High current capability
High voltage clamping
Polysilicon gate voltage driven
Low threshold voltage
Low on-voltage drop

STGB20NB37LZT4 Applications
Automotive
Power Management
AC and DC motor drives
Chopper and inverters
Solar inverters
STGB20NB37LZT4 More Descriptions
Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2 Tab) D2PAK T/R
STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH™ IGBT - TO-263
20 A, 400 V internally clamped IGBT
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
IGBT Transistors N-Ch Clamped 20 Amp
IGBT CLAMP 400V 20A 1,8V TO263
STMICROELECTRONICS STGB20NB37LZT4
DIODE ARRAY GP 300V 15A TO247-3
IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N
Product Comparison
The three parts on the right have similar specifications to STGB20NB37LZT4.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Continuous Drain Current (ID)
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Additional Feature
    Power - Max
    Gate-Emitter Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Pbfree Code
    Rise Time
    Terminal Position
    Configuration
    Reverse Recovery Time
    IGBT Type
    View Compare
  • STGB20NB37LZT4
    STGB20NB37LZT4
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    200W
    GULL WING
    245
    20A
    30
    STGB20
    3
    R-PSSO-G2
    1
    Single
    200W
    COLLECTOR
    Standard
    2.3 μs
    POWER CONTROL
    N-CHANNEL
    2 μs
    375V
    40A
    20A
    425V
    2V
    425V
    2900 ns
    250V, 20A, 1k Ω, 4.5V
    2V @ 4.5V, 20A
    15000 ns
    51nC
    80A
    2.3μs/2μs
    11.8mJ (off)
    2V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB18N40LZT4
    STGB18N40LZT4
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, PowerMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Insulated Gate BIP Transistors
    150W
    GULL WING
    -
    -
    -
    STGB18
    4
    R-PSSO-G2
    1
    Single
    -
    COLLECTOR
    Logic
    650 ns
    AUTOMOTIVE IGNITION
    N-CHANNEL
    13.5 μs
    360V
    30A
    -
    420V
    1.35V
    420V
    4450 ns
    300V, 10A, 5V
    1.7V @ 4.5V, 10A
    22200 ns
    29nC
    40A
    650ns/13.5μs
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    VOLTAGE CLAMPING
    150W
    16V
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    -
    -
    -
    -
    -
    -
    STGB20NB37LZT4 vs STGB18N40LZT4
  • STGB10NB37LZT4
    STGB10NB37LZT4
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -65°C~175°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    Insulated Gate BIP Transistors
    125W
    GULL WING
    245
    20A
    30
    STGB10
    3
    R-PSSO-G2
    1
    Single
    125W
    COLLECTOR
    Standard
    -
    AUTOMOTIVE IGNITION
    N-CHANNEL
    -
    440V
    20A
    -
    440V
    -
    440V
    860 ns
    328V, 10A, 1k Ω, 5V
    1.8V @ 4.5V, 10A
    17800 ns
    28nC
    40A
    1.3μs/8μs
    2.4mJ (on), 5mJ (off)
    2.4V
    No
    ROHS3 Compliant
    Lead Free
    -
    8 Weeks
    -
    VOLTAGE CLAMPING
    -
    -
    4.6mm
    10.4mm
    9.35mm
    -
    yes
    340ns
    -
    -
    -
    -
    STGB20NB37LZT4 vs STGB10NB37LZT4
  • STGB30H60DFB
    STGB30H60DFB
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    -
    Active
    1 (Unlimited)
    2
    EAR99
    -
    -
    260W
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STGB30
    -
    R-PSSO-G2
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    2V
    60A
    -
    600V
    -
    600V
    51.1 ns
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    223 ns
    149nC
    120A
    37ns/146ns
    383μJ (on), 293μJ (off)
    -
    -
    ROHS3 Compliant
    -
    -
    20 Weeks
    -
    -
    260W
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    53 ns
    Trench Field Stop
    STGB20NB37LZT4 vs STGB30H60DFB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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