SIRA96DP-T1-GE3

Vishay Siliconix SIRA96DP-T1-GE3

Part Number:
SIRA96DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070618-SIRA96DP-T1-GE3
Description:
MOSFET N-CH 30V 16A SO8
ECAD Model:
Datasheet:
SIRA96DP-T1-GE3

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Specifications
Vishay Siliconix SIRA96DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA96DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Manufacturer Package Identifier
    S17-0173-Single
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET® Gen IV
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Channels
    1
  • Power Dissipation-Max
    34.7W Tc
  • Power Dissipation
    3.6W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8.8m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1385pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    20V, -16V
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    15A
  • Drain to Source Breakdown Voltage
    30V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.17mm
  • RoHS Status
    ROHS3 Compliant
Description
SIRA96DP-T1-GE3 Overview
A device's maximum input capacitance is 1385pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SIRA96DP-T1-GE3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13 ns


SIRA96DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA96DP-T1-GE3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SIRA96DP-T1-GE3 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET
PowerPAK SO-8 MOSFETs ROHS
N-CH SINGLE 30V PPAKSO8
Mosfet, N-Ch, 30V, 16A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SIRA96DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    RoHS Status
    Contact Plating
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Published
    Number of Terminations
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Fall Time (Typ)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Resistance
    Lead Free
    Subcategory
    View Compare
  • SIRA96DP-T1-GE3
    SIRA96DP-T1-GE3
    14 Weeks
    Surface Mount
    PowerPAK® SO-8
    S17-0173-Single
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET® Gen IV
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    1
    34.7W Tc
    3.6W
    8 ns
    N-Channel
    8.8m Ω @ 10A, 10V
    2.2V @ 250μA
    1385pF @ 15V
    16A Tc
    15nC @ 4.5V
    4.5V 10V
    20V, -16V
    13 ns
    15A
    30V
    150°C
    1.17mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SIRA02DP-T1-GE3
    14 Weeks
    Surface Mount
    PowerPAK® SO-8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    5W Ta 71.4W Tc
    5W
    31 ns
    N-Channel
    2m Ω @ 15A, 10V
    2.2V @ 250μA
    6150pF @ 15V
    50A Tc
    117nC @ 10V
    4.5V 10V
    20V, -16V
    42 ns
    50A
    30V
    -
    1.12mm
    ROHS3 Compliant
    Tin
    Surface Mount
    8
    506.605978mg
    SILICON
    2011
    5
    DUAL
    C BEND
    R-PDSO-C5
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    16 ns
    1.1V
    20V
    0.002Ohm
    45 mJ
    1.1 V
    6.25mm
    5.26mm
    Unknown
    No
    -
    -
    -
  • SIRA04DP-T1-GE3
    14 Weeks
    Surface Mount
    PowerPAK® SO-8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    5W Ta 62.5W Tc
    5W
    24 ns
    N-Channel
    2.15m Ω @ 15A, 10V
    2.2V @ 250μA
    3595pF @ 15V
    40A Tc
    77nC @ 10V
    4.5V 10V
    20V, -16V
    30 ns
    40A
    30V
    -
    1.12mm
    ROHS3 Compliant
    Tin
    Surface Mount
    8
    506.605978mg
    SILICON
    2011
    5
    DUAL
    C BEND
    R-PDSO-C5
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    16 ns
    1.1V
    20V
    -
    20 mJ
    1.1 V
    6.25mm
    5.26mm
    Unknown
    No
    2.15mOhm
    Lead Free
    -
  • SIRA12DP-T1-GE3
    14 Weeks
    Surface Mount
    PowerPAK® SO-8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    4.5W Ta 31W Tc
    4.5W
    20 ns
    N-Channel
    4.3m Ω @ 10A, 10V
    2.2V @ 250μA
    2070pF @ 15V
    25A Tc
    45nC @ 10V
    4.5V 10V
    20V, -16V
    25 ns
    25A
    30V
    -
    1.12mm
    ROHS3 Compliant
    -
    Surface Mount
    8
    506.605978mg
    SILICON
    2001
    5
    DUAL
    C BEND
    R-PDSO-C5
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    20 ns
    1.1V
    20V
    -
    -
    -
    6.25mm
    5.26mm
    Unknown
    No
    4.3mOhm
    Lead Free
    FET General Purpose Power
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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