Vishay Siliconix SIRA96DP-T1-GE3
- Part Number:
- SIRA96DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070618-SIRA96DP-T1-GE3
- Description:
- MOSFET N-CH 30V 16A SO8
- Datasheet:
- SIRA96DP-T1-GE3
Vishay Siliconix SIRA96DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA96DP-T1-GE3.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Manufacturer Package IdentifierS17-0173-Single
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET® Gen IV
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Channels1
- Power Dissipation-Max34.7W Tc
- Power Dissipation3.6W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.8m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1385pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V, -16V
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)15A
- Drain to Source Breakdown Voltage30V
- Max Junction Temperature (Tj)150°C
- Height1.17mm
- RoHS StatusROHS3 Compliant
SIRA96DP-T1-GE3 Overview
A device's maximum input capacitance is 1385pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SIRA96DP-T1-GE3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13 ns
SIRA96DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA96DP-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1385pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SIRA96DP-T1-GE3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13 ns
SIRA96DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA96DP-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SIRA96DP-T1-GE3 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET
PowerPAK SO-8 MOSFETs ROHS
N-CH SINGLE 30V PPAKSO8
Mosfet, N-Ch, 30V, 16A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
N-CHANNEL 30-V (D-S) MOSFET
PowerPAK SO-8 MOSFETs ROHS
N-CH SINGLE 30V PPAKSO8
Mosfet, N-Ch, 30V, 16A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
The three parts on the right have similar specifications to SIRA96DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseManufacturer Package IdentifierOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRoHS StatusContact PlatingMountNumber of PinsWeightTransistor Element MaterialPublishedNumber of TerminationsTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationFall Time (Typ)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxAvalanche Energy Rating (Eas)Nominal VgsLengthWidthREACH SVHCRadiation HardeningResistanceLead FreeSubcategoryView Compare
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SIRA96DP-T1-GE314 WeeksSurface MountPowerPAK® SO-8S17-0173-Single-55°C~150°C TJTape & Reel (TR)TrenchFET® Gen IVActive1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED134.7W Tc3.6W8 nsN-Channel8.8m Ω @ 10A, 10V2.2V @ 250μA1385pF @ 15V16A Tc15nC @ 4.5V4.5V 10V20V, -16V13 ns15A30V150°C1.17mmROHS3 Compliant-----------------------------
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14 WeeksSurface MountPowerPAK® SO-8--55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---15W Ta 71.4W Tc5W31 nsN-Channel2m Ω @ 15A, 10V2.2V @ 250μA6150pF @ 15V50A Tc117nC @ 10V4.5V 10V20V, -16V42 ns50A30V-1.12mmROHS3 CompliantTinSurface Mount8506.605978mgSILICON20115DUALC BENDR-PDSO-C51SingleENHANCEMENT MODEDRAINSWITCHING16 ns1.1V20V0.002Ohm45 mJ1.1 V6.25mm5.26mmUnknownNo---
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14 WeeksSurface MountPowerPAK® SO-8--55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---15W Ta 62.5W Tc5W24 nsN-Channel2.15m Ω @ 15A, 10V2.2V @ 250μA3595pF @ 15V40A Tc77nC @ 10V4.5V 10V20V, -16V30 ns40A30V-1.12mmROHS3 CompliantTinSurface Mount8506.605978mgSILICON20115DUALC BENDR-PDSO-C51SingleENHANCEMENT MODEDRAINSWITCHING16 ns1.1V20V-20 mJ1.1 V6.25mm5.26mmUnknownNo2.15mOhmLead Free-
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14 WeeksSurface MountPowerPAK® SO-8--55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---14.5W Ta 31W Tc4.5W20 nsN-Channel4.3m Ω @ 10A, 10V2.2V @ 250μA2070pF @ 15V25A Tc45nC @ 10V4.5V 10V20V, -16V25 ns25A30V-1.12mmROHS3 Compliant-Surface Mount8506.605978mgSILICON20015DUALC BENDR-PDSO-C51SingleENHANCEMENT MODEDRAINSWITCHING20 ns1.1V20V---6.25mm5.26mmUnknownNo4.3mOhmLead FreeFET General Purpose Power
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