Vishay Siliconix SIRA58DP-T1-GE3
- Part Number:
- SIRA58DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488034-SIRA58DP-T1-GE3
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- ECAD Model:
-
- Datasheet:
- SIRA58DP-T1-GE3
Vishay Siliconix SIRA58DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA58DP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max27.7W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.65m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3750pF @ 20V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V, -16V
- Continuous Drain Current (ID)60A
- RoHS StatusROHS3 Compliant
SIRA58DP-T1-GE3 Overview
The maximum input capacitance of this device is 3750pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SIRA58DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a 40V drain to source voltage (Vdss)
SIRA58DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA58DP-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 3750pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SIRA58DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a 40V drain to source voltage (Vdss)
SIRA58DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA58DP-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SIRA58DP-T1-GE3 More Descriptions
N-Channel 40 V 2.65 mOhm 27.7 W TrenchFET Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 40V 109A 8-Pin PowerPAK SO EP T/R
N-Channel 40-V (D-S) Mosfet |Vishay SIRA58DP-T1-GE3
MOSFET 40V Vds 60A Id 0.00265Vgs Rds(On)
Power Field-Effect Transistor, 109A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 109A 8-Pin PowerPAK SO EP T/R
N-Channel 40-V (D-S) Mosfet |Vishay SIRA58DP-T1-GE3
MOSFET 40V Vds 60A Id 0.00265Vgs Rds(On)
Power Field-Effect Transistor, 109A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to SIRA58DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusManufacturer Package IdentifierNumber of ChannelsPower DissipationTurn On Delay TimeTurn-Off Delay TimeDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightContact PlatingNumber of PinsWeightTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationFall Time (Typ)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxAvalanche Energy Rating (Eas)Nominal VgsLengthWidthREACH SVHCRadiation HardeningResistanceLead FreeView Compare
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SIRA58DP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED27.7W TcN-Channel2.65m Ω @ 15A, 10V2.4V @ 250μA3750pF @ 20V60A Tc75nC @ 10V40V4.5V 10V20V, -16V60AROHS3 Compliant---------------------------------- -
14 Weeks-Surface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET® Gen IV-Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED62.5W TcN-Channel1.4m Ω @ 15A, 10V2.1V @ 250μA2650pF @ 10V60A Tc26nC @ 4.5V-4.5V 10V20V, -16V44.5AROHS3 CompliantS17-0173-Single15W12 ns18 ns25V150°C1.17mm-------------------------
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14 WeeksSurface MountSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---5W Ta 71.4W TcN-Channel2m Ω @ 15A, 10V2.2V @ 250μA6150pF @ 15V50A Tc117nC @ 10V-4.5V 10V20V, -16V50AROHS3 Compliant-15W31 ns42 ns30V-1.12mmTin8506.605978mgSILICON5DUALC BENDR-PDSO-C51SingleENHANCEMENT MODEDRAINSWITCHING16 ns1.1V20V0.002Ohm45 mJ1.1 V6.25mm5.26mmUnknownNo--
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14 WeeksSurface MountSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---5W Ta 62.5W TcN-Channel2.15m Ω @ 15A, 10V2.2V @ 250μA3595pF @ 15V40A Tc77nC @ 10V-4.5V 10V20V, -16V40AROHS3 Compliant-15W24 ns30 ns30V-1.12mmTin8506.605978mgSILICON5DUALC BENDR-PDSO-C51SingleENHANCEMENT MODEDRAINSWITCHING16 ns1.1V20V-20 mJ1.1 V6.25mm5.26mmUnknownNo2.15mOhmLead Free
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