Vishay Siliconix SIRA18DP-T1-GE3

Name: SIRA18DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2848800-SIRA18DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SIRA18DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848800-SIRA18DP-T1-GE3

Description:: MOSFET N-CH 30V 33A PPAK SO-8

ECAD Model:

Datasheet:: SIRA18DP-T1-GE3

Specifications

Vishay Siliconix SIRA18DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA18DP-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
TrenchFET®
Published
2011
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.3W Ta 14.7W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
21.5nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -16V
Continuous Drain Current (ID)
33A
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0075Ohm
Pulsed Drain Current-Max (IDM)
70A
DS Breakdown Voltage-Min
30V
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SIRA18DP-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1000pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 33A.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SIRA18DP-T1-GE3 Features
a continuous drain current (ID) of 33A
based on its rated peak drain current 70A.
a threshold voltage of 1.2V
a 30V drain to source voltage (Vdss)

SIRA18DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA18DP-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SIRA18DP-T1-GE3 More Descriptions

Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Mosfet, N-Ch, 30V, 33A, Powerpak So; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SIRA18DP-T1-GE3.

Product Comparison

The three parts on the right have similar specifications to SIRA18DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

REACH SVHC

Radiation Hardening

RoHS Status

Manufacturer Package Identifier

Reach Compliance Code

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Supplier Device Package

Weight

Resistance

Element Configuration

Fall Time (Typ)

Avalanche Energy Rating (Eas)

Nominal Vgs

Length

Width

Lead Free

View Compare
SIRA18DP-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-55°C~150°C TJ

Cut Tape (CT)

TrenchFET®

2011

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

FLAT

240

40

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

3.3W Ta 14.7W Tc

ENHANCEMENT MODE

3.3W

DRAIN

N-Channel

SWITCHING

7.5m Ω @ 10A, 10V

2.4V @ 250μA

1000pF @ 15V

33A Tc

21.5nC @ 10V

30V

4.5V 10V

20V, -16V

33A

1.2V

20V

0.0075Ohm

70A

30V

Unknown

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SIRA96DP-T1-GE3

Vishay Siliconix

14 Weeks

-

-

Surface Mount

PowerPAK® SO-8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

-

-

Active

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

34.7W Tc

-

3.6W

-

N-Channel

-

8.8m Ω @ 10A, 10V

2.2V @ 250μA

1385pF @ 15V

16A Tc

15nC @ 4.5V

-

4.5V 10V

20V, -16V

15A

-

-

-

-

-

-

-

ROHS3 Compliant

S17-0173-Single

unknown

1

8 ns

13 ns

30V

150°C

1.17mm

-

-

-

-

-

-

-

-

-

-

SIRA18DP-T1-GE3 vs SIRA96DP-T1-GE3
SIRA54DP-T1-GE3

Vishay Siliconix

14 Weeks

-

-

Surface Mount

PowerPAK® SO-8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

-

-

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

36.7W Tc

-

-

-

N-Channel

-

2.35mOhm @ 15A, 10V

2.3V @ 250μA

5300pF @ 20V

60A Tc

48nC @ 4.5V

40V

4.5V 10V

20V, -16V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

PowerPAK® SO-8

-

-

-

-

-

-

-

-

-

SIRA18DP-T1-GE3 vs SIRA54DP-T1-GE3
SIRA04DP-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

-

Active

1 (Unlimited)

5

EAR99

-

MOSFET (Metal Oxide)

DUAL

C BEND

-

-

R-PDSO-C5

1

-

5W Ta 62.5W Tc

ENHANCEMENT MODE

5W

DRAIN

N-Channel

SWITCHING

2.15m Ω @ 15A, 10V

2.2V @ 250μA

3595pF @ 15V

40A Tc

77nC @ 10V

-

4.5V 10V

20V, -16V

40A

1.1V

20V

-

-

-

Unknown

No

ROHS3 Compliant

-

-

1

24 ns

30 ns

30V

-

1.12mm

-

506.605978mg

2.15mOhm

Single

16 ns

20 mJ

1.1 V

6.25mm

5.26mm

Lead Free

SIRA18DP-T1-GE3 vs SIRA04DP-T1-GE3

Certification

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SIRA18DP-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO EP T RoHS: Compliant	6000	3000 $0.2214
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO EP T RoHS: Compliant	5000	1 $0.4829 10 $0.411 25 $0.4092 100 $0.3331 250 $0.3221 500 $0.2857 1000 $0.2386 3000 $0.2197
SIRA18DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 33A PPAK SO-8 RoHS: Compliant	7834	1 $0.73 10 $0.634 100 $0.4895 500 $0.36256 1000 $0.29005
SIRA18DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 33A PPAK SO-8 RoHS: Compliant	7834	1 $0.73 10 $0.634 100 $0.4895 500 $0.36256 1000 $0.29005
SIRA18DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 33A PPAK SO-8 RoHS: Compliant	6000	3000 $0.2552
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO EP T RoHS: Compliant	6000	3000 $0.2214
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO EP T RoHS: Compliant	5000	32 $0.4092 100 $0.3331 250 $0.3221 500 $0.2857 1000 $0.2386 3000 $0.2197
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	15000	3000 $0.19962 6000 $0.15355 9000 $0.12222 15000 $0.10325 30000 $0.09506 75000 $0.09213 150000 $0.08938
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	6000	3000 $0.2319 6000 $0.2249 12000 $0.2159 18000 $0.2099 30000 $0.2049
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	1 $0.3849 10 $0.2619 25 $0.2259 50 $0.2079 100 $0.1999 500 $0.1969 1000 $0.1939
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET Transistor, N Channel, 33 A, 30 V, 0.006 oh	2921	1 $0.768 10 $0.613 25 $0.564 50 $0.515 100 $0.466 500 $0.384 1000 $0.307
SIRA18DP-T1-GE3 DISTI #	Vishay Siliconix	SIRA18DP-T1-GE3 N-channel MOSFET Transistor, 15.5 RoHS: Compliant	0	300 $0.3 600 $0.25 1500 $0.23 3000 $0.22
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	5602	1 $0.64 10 $0.511 100 $0.388 500 $0.32 1000 $0.256 3000 $0.232
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 15.5A, RL	2980	100 $0.235 400 $0.207 1000 $0.19
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N-CH, 30V, 33A, POWERPAKSO-8 RoHS: Compliant	0	5 $0.282 25 $0.261 100 $0.24 250 $0.211 500 $0.195
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N-CH, 30V, 33A, POWERPAKSO-8 RoHS: Compliant	0	1 $1.02 10 $0.809 100 $0.615 500 $0.507 1000 $0.406 3000 $0.368
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Not Compliant	5000	10 $0.4129 25 $0.411 100 $0.3342 250 $0.3231
SIRA18DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Not Compliant	6000	3000 $0.2218

SIRA18D~~(1)~~
SIRA18~~(3)~~
SIRA1~~(10)~~
SIRA~~(24)~~
SIR~~(83)~~

Vishay Siliconix SIRA18DP-T1-GE3

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