Vishay Siliconix SIRA24DP-T1-GE3

Name: SIRA24DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2485166-SIRA24DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SIRA24DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2485166-SIRA24DP-T1-GE3

Description:: MOSFET N-CH 25V 60A SO8

ECAD Model:

Datasheet:: SIRA24DP-T1-GE3

Specifications

Vishay Siliconix SIRA24DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA24DP-T1-GE3.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Manufacturer Package Identifier
S17-0173-Single
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Channels
1
Power Dissipation-Max
62.5W Tc
Power Dissipation
5W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -16V
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
44.5A
Drain to Source Breakdown Voltage
25V
Max Junction Temperature (Tj)
150°C
Height
1.17mm
RoHS Status
ROHS3 Compliant

Description

SIRA24DP-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SIRA24DP-T1-GE3 Features
a continuous drain current (ID) of 44.5A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 18 ns

SIRA24DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA24DP-T1-GE3 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

SIRA24DP-T1-GE3 More Descriptions

N-Channel 25 V 1.4 mOhm 62.5 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK SO EP T/R
N-Channel 25-V (D-S) Mosfet |Vishay SIRA24DP-T1-GE3
MOSFET 25V Vds 60A Id 17.2nC Qg Typ.
PowerPAK SO-8 Single MOSFETs ROHS
MOSFET, N-CH, 25V, 60A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1

Product Comparison

The three parts on the right have similar specifications to SIRA24DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

RoHS Status

Contact Plating

Mount

Number of Pins

Weight

Transistor Element Material

Published

Number of Terminations

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Case Connection

Transistor Application

Fall Time (Typ)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Nominal Vgs

Length

Width

REACH SVHC

Radiation Hardening

Resistance

Lead Free

Subcategory

View Compare
SIRA24DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

S17-0173-Single

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

unknown

NOT SPECIFIED

1

62.5W Tc

5W

12 ns

N-Channel

1.4m Ω @ 15A, 10V

2.1V @ 250μA

2650pF @ 10V

60A Tc

26nC @ 4.5V

4.5V 10V

20V, -16V

18 ns

44.5A

25V

150°C

1.17mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SIRA02DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

-

1

5W Ta 71.4W Tc

5W

31 ns

N-Channel

2m Ω @ 15A, 10V

2.2V @ 250μA

6150pF @ 15V

50A Tc

117nC @ 10V

4.5V 10V

20V, -16V

42 ns

50A

30V

-

1.12mm

ROHS3 Compliant

Tin

Surface Mount

8

506.605978mg

SILICON

2011

5

DUAL

C BEND

R-PDSO-C5

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

16 ns

1.1V

20V

0.002Ohm

45 mJ

1.1 V

6.25mm

5.26mm

Unknown

No

-

-

-

SIRA24DP-T1-GE3 vs SIRA02DP-T1-GE3
SIRA04DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

-

1

5W Ta 62.5W Tc

5W

24 ns

N-Channel

2.15m Ω @ 15A, 10V

2.2V @ 250μA

3595pF @ 15V

40A Tc

77nC @ 10V

4.5V 10V

20V, -16V

30 ns

40A

30V

-

1.12mm

ROHS3 Compliant

Tin

Surface Mount

8

506.605978mg

SILICON

2011

5

DUAL

C BEND

R-PDSO-C5

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

16 ns

1.1V

20V

-

20 mJ

1.1 V

6.25mm

5.26mm

Unknown

No

2.15mOhm

Lead Free

-

SIRA24DP-T1-GE3 vs SIRA04DP-T1-GE3
SIRA12DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

-

1

4.5W Ta 31W Tc

4.5W

20 ns

N-Channel

4.3m Ω @ 10A, 10V

2.2V @ 250μA

2070pF @ 15V

25A Tc

45nC @ 10V

4.5V 10V

20V, -16V

25 ns

25A

30V

-

1.12mm

ROHS3 Compliant

-

Surface Mount

8

506.605978mg

SILICON

2001

5

DUAL

C BEND

R-PDSO-C5

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

20 ns

1.1V

20V

-

-

-

6.25mm

5.26mm

Unknown

No

4.3mOhm

Lead Free

FET General Purpose Power

SIRA24DP-T1-GE3 vs SIRA12DP-T1-GE3