Vishay Siliconix SIRA72DP-T1-GE3
- Part Number:
- SIRA72DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586248-SIRA72DP-T1-GE3
- Description:
- MOSFET N-CH 40V 60A SO8
- ECAD Model:
-
- Datasheet:
- SIRA72DP-T1-GE3
Vishay Siliconix SIRA72DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA72DP-T1-GE3.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET® Gen IV
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max56.8W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.5m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3240pF @ 20V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V, -16V
- RoHS StatusROHS3 Compliant
SIRA72DP-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3240pF @ 20V is its maximum input capacitance.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SIRA72DP-T1-GE3 Features
a 40V drain to source voltage (Vdss)
SIRA72DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA72DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3240pF @ 20V is its maximum input capacitance.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SIRA72DP-T1-GE3 Features
a 40V drain to source voltage (Vdss)
SIRA72DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA72DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SIRA72DP-T1-GE3 More Descriptions
N-Channel 40 V 3.5 mOhm 56.8 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 40V 27.6A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 60A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 40V 60A POWERPAKSO-8
French Electronic Distributor since 1988
Trans MOSFET N-CH 40V 27.6A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 60A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 40V 60A POWERPAKSO-8
French Electronic Distributor since 1988
The three parts on the right have similar specifications to SIRA72DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusContact PlatingMountNumber of PinsTransistor Element MaterialPublishedPbfree CodeNumber of TerminationsSubcategoryTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinREACH SVHCRadiation HardeningWeightResistanceNumber of ChannelsElement ConfigurationTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthLead FreeView Compare
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SIRA72DP-T1-GE314 WeeksSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET® Gen IVActive1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED56.8W TcN-Channel3.5m Ω @ 10A, 10V2.4V @ 250μA3240pF @ 20V60A Tc30nC @ 4.5V40V4.5V 10V20V, -16VROHS3 Compliant---------------------------------------- -
14 WeeksSurface MountPowerPAK® SO-8-55°C~150°C TJCut Tape (CT)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)240-403.3W Ta 14.7W TcN-Channel7.5m Ω @ 10A, 10V2.4V @ 250μA1000pF @ 15V33A Tc21.5nC @ 10V30V4.5V 10V20V, -16VROHS3 CompliantTinSurface Mount8SILICON2011yes5FET General Purpose PowersDUALFLATR-PDSO-F51SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE3.3WDRAINSWITCHING33A1.2V20V0.0075Ohm70A30VUnknownNo--------------
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14 WeeksSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---5W Ta 62.5W TcN-Channel2.15m Ω @ 15A, 10V2.2V @ 250μA3595pF @ 15V40A Tc77nC @ 10V-4.5V 10V20V, -16VROHS3 CompliantTinSurface Mount8SILICON2011-5-DUALC BENDR-PDSO-C51-ENHANCEMENT MODE5WDRAINSWITCHING40A1.1V20V---UnknownNo506.605978mg2.15mOhm1Single24 ns16 ns30 ns30V20 mJ1.1 V1.12mm6.25mm5.26mmLead Free
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14 WeeksSurface MountPowerPAK® SO-8-55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)EAR99MOSFET (Metal Oxide)---4.5W Ta 31W TcN-Channel4.3m Ω @ 10A, 10V2.2V @ 250μA2070pF @ 15V25A Tc45nC @ 10V-4.5V 10V20V, -16VROHS3 Compliant-Surface Mount8SILICON2001-5FET General Purpose PowerDUALC BENDR-PDSO-C51-ENHANCEMENT MODE4.5WDRAINSWITCHING25A1.1V20V---UnknownNo506.605978mg4.3mOhm1Single20 ns20 ns25 ns30V--1.12mm6.25mm5.26mmLead Free
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