Vishay Siliconix SIRA12DP-T1-GE3
- Part Number:
- SIRA12DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483505-SIRA12DP-T1-GE3
- Description:
- MOSFET N-CH 30V 25A PPAK SO-8
- Datasheet:
- SIRA12DP
Vishay Siliconix SIRA12DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA12DP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2001
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance4.3mOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- JESD-30 CodeR-PDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max4.5W Ta 31W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation4.5W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.3m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2070pF @ 15V
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V, -16V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)25A
- Threshold Voltage1.1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Height1.12mm
- Length6.25mm
- Width5.26mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SIRA12DP-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2070pF @ 15V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SIRA12DP-T1-GE3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 1.1V
SIRA12DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA12DP-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2070pF @ 15V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SIRA12DP-T1-GE3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 1.1V
SIRA12DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA12DP-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SIRA12DP-T1-GE3 More Descriptions
Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP T/R
N-Ch Powerpakso-8 Bwl 30V Gen4 4.3/6.0 Mohm@10V/4.5V Rohs Compliant: Yes
30V 25A 31W 4.3m´Î@10V10A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
Semiconcuctor, Mosfet;TrenchFET;N-Channel;30V;25A;4.3mohm @ 10V;PowerPAK SO-8 | Siliconix / Vishay SIRA12DP-T1-GE3
MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP T/R
N-Ch Powerpakso-8 Bwl 30V Gen4 4.3/6.0 Mohm@10V/4.5V Rohs Compliant: Yes
30V 25A 31W 4.3m´Î@10V10A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
Semiconcuctor, Mosfet;TrenchFET;N-Channel;30V;25A;4.3mohm @ 10V;PowerPAK SO-8 | Siliconix / Vishay SIRA12DP-T1-GE3
MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
The three parts on the right have similar specifications to SIRA12DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Manufacturer Package IdentifierMax Junction Temperature (Tj)Contact PlatingDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Nominal VgsView Compare
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SIRA12DP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2001Active1 (Unlimited)5EAR994.3mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALC BENDR-PDSO-C5114.5W Ta 31W TcSingleENHANCEMENT MODE4.5WDRAIN20 nsN-ChannelSWITCHING4.3m Ω @ 10A, 10V2.2V @ 250μA2070pF @ 15V25A Tc45nC @ 10V4.5V 10V20V, -16V20 ns25 ns25A1.1V20V30V1.12mm6.25mm5.26mmUnknownNoROHS3 CompliantLead Free-----------
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14 Weeks-Surface MountPowerPAK® SO-88---55°C~150°C TJTape & Reel (TR)TrenchFET® Gen IV2016Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-----57W Tc-----N-Channel-0.94m Ω @ 20A, 10V2.2V @ 250μA7650pF @ 15V100A Tc60nC @ 4.5V4.5V 10V20V, -16V--100A2.2V-----No SVHC-ROHS3 Compliant-NOT SPECIFIEDunknownNOT SPECIFIED30V------
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14 Weeks-Surface MountPowerPAK® SO-8----55°C~150°C TJTape & Reel (TR)TrenchFET® Gen IV-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)----162.5W Tc--5W-12 nsN-Channel-1.4m Ω @ 15A, 10V2.1V @ 250μA2650pF @ 10V60A Tc26nC @ 4.5V4.5V 10V20V, -16V-18 ns44.5A--25V1.17mm----ROHS3 Compliant-NOT SPECIFIEDunknownNOT SPECIFIED-S17-0173-Single150°C----
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14 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)5EAR99--MOSFET (Metal Oxide)DUALC BENDR-PDSO-C5115W Ta 71.4W TcSingleENHANCEMENT MODE5WDRAIN31 nsN-ChannelSWITCHING2m Ω @ 15A, 10V2.2V @ 250μA6150pF @ 15V50A Tc117nC @ 10V4.5V 10V20V, -16V16 ns42 ns50A1.1V20V30V1.12mm6.25mm5.26mmUnknownNoROHS3 Compliant-------Tin0.002Ohm45 mJ1.1 V
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