Vishay Siliconix SIRA60DP-T1-GE3

Name: SIRA60DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2849836-SIRA60DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SIRA60DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2849836-SIRA60DP-T1-GE3

Description:: MOSFET N-CH 30V 100A SO8

ECAD Model:

Datasheet:: SIRA60DP-T1-GE3

Specifications

Vishay Siliconix SIRA60DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA60DP-T1-GE3.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
57W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.94m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7650pF @ 15V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -16V
Continuous Drain Current (ID)
100A
Threshold Voltage
2.2V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

SIRA60DP-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7650pF @ 15V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SIRA60DP-T1-GE3 Features
a continuous drain current (ID) of 100A
a threshold voltage of 2.2V
a 30V drain to source voltage (Vdss)

SIRA60DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA60DP-T1-GE3 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

SIRA60DP-T1-GE3 More Descriptions

N-Channel 30 V 0.94 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO EP T/R
30V 100A 57W 0.94mΩ@10V,20A N Channel PowerPAK-SO-8 MOSFETs ROHS
Power Field-Effect Transistor, 100A I(D), 30V, 0.00094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 30V, 100A, Powerpak So; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Vishay SIRA60DP-T1-GE3
MOSFET N-CH 30V 100A POWERPAKSO
MOSFET N-CH 30V 100A PPAK SO-8

Product Comparison

The three parts on the right have similar specifications to SIRA60DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

REACH SVHC

RoHS Status

Manufacturer Package Identifier

Number of Channels

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Contact Plating

Mount

Transistor Element Material

Pbfree Code

Number of Terminations

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Radiation Hardening

Weight

Resistance

Element Configuration

Fall Time (Typ)

Length

Width

Lead Free

View Compare
SIRA60DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

8

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

2016

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

unknown

NOT SPECIFIED

57W Tc

N-Channel

0.94m Ω @ 20A, 10V

2.2V @ 250μA

7650pF @ 15V

100A Tc

60nC @ 4.5V

30V

4.5V 10V

20V, -16V

100A

2.2V

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SIRA96DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

-

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

unknown

NOT SPECIFIED

34.7W Tc

N-Channel

8.8m Ω @ 10A, 10V

2.2V @ 250μA

1385pF @ 15V

16A Tc

15nC @ 4.5V

-

4.5V 10V

20V, -16V

15A

-

-

ROHS3 Compliant

S17-0173-Single

1

3.6W

8 ns

13 ns

30V

150°C

1.17mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIRA60DP-T1-GE3 vs SIRA96DP-T1-GE3
SIRA18DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

8

-55°C~150°C TJ

Cut Tape (CT)

TrenchFET®

2011

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

240

-

40

3.3W Ta 14.7W Tc

N-Channel

7.5m Ω @ 10A, 10V

2.4V @ 250μA

1000pF @ 15V

33A Tc

21.5nC @ 10V

30V

4.5V 10V

20V, -16V

33A

1.2V

Unknown

ROHS3 Compliant

-

-

3.3W

-

-

-

-

-

Tin

Surface Mount

SILICON

yes

5

FET General Purpose Powers

DUAL

FLAT

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

20V

0.0075Ohm

70A

30V

No

-

-

-

-

-

-

-

SIRA60DP-T1-GE3 vs SIRA18DP-T1-GE3
SIRA12DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

8

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2001

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

-

4.5W Ta 31W Tc

N-Channel

4.3m Ω @ 10A, 10V

2.2V @ 250μA

2070pF @ 15V

25A Tc

45nC @ 10V

-

4.5V 10V

20V, -16V

25A

1.1V

Unknown

ROHS3 Compliant

-

1

4.5W

20 ns

25 ns

30V

-

1.12mm

-

Surface Mount

SILICON

-

5

FET General Purpose Power

DUAL

C BEND

R-PDSO-C5

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

20V

-

-

-

No

506.605978mg

4.3mOhm

Single

20 ns

6.25mm

5.26mm

Lead Free

SIRA60DP-T1-GE3 vs SIRA12DP-T1-GE3