Vishay Siliconix SIRA54DP-T1-GE3

Name: SIRA54DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2484746-SIRA54DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SIRA54DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2484746-SIRA54DP-T1-GE3

Description:: MOSFET N-CH 40V 60A SO8

ECAD Model:

Datasheet:: SIRA54DP-T1-GE3

Specifications

Vishay Siliconix SIRA54DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIRA54DP-T1-GE3.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
36.7W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5300pF @ 20V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 4.5V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -16V
RoHS Status
ROHS3 Compliant

Description

SIRA54DP-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5300pF @ 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SIRA54DP-T1-GE3 Features
a 40V drain to source voltage (Vdss)

SIRA54DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIRA54DP-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SIRA54DP-T1-GE3 More Descriptions

SIRA54DP-T1-GE3 Vishay MOSFETs Transistor N-CH 40V 60A 8-Pin PowerPAK SO EP T/R - Arrow.com
N-Channel 40 V 2.35 mOhm 36.7 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 60A I(D), 40V, 0.00235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 40V 60A POWERPAKSO-8
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to SIRA54DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Contact Plating

Mount

Number of Pins

Transistor Element Material

Published

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

REACH SVHC

Radiation Hardening

Manufacturer Package Identifier

Reach Compliance Code

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Weight

Resistance

Element Configuration

Fall Time (Typ)

Length

Width

Lead Free

View Compare
SIRA54DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

PowerPAK® SO-8

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

Active

1 (Unlimited)

MOSFET (Metal Oxide)

36.7W Tc

N-Channel

2.35mOhm @ 15A, 10V

2.3V @ 250μA

5300pF @ 20V

60A Tc

48nC @ 4.5V

40V

4.5V 10V

20V, -16V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SIRA18DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Cut Tape (CT)

TrenchFET®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3.3W Ta 14.7W Tc

N-Channel

7.5m Ω @ 10A, 10V

2.4V @ 250μA

1000pF @ 15V

33A Tc

21.5nC @ 10V

30V

4.5V 10V

20V, -16V

ROHS3 Compliant

Tin

Surface Mount

8

SILICON

2011

yes

5

EAR99

FET General Purpose Powers

DUAL

FLAT

240

40

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

3.3W

DRAIN

SWITCHING

33A

1.2V

20V

0.0075Ohm

70A

30V

Unknown

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIRA54DP-T1-GE3 vs SIRA18DP-T1-GE3
SIRA24DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET® Gen IV

Active

1 (Unlimited)

MOSFET (Metal Oxide)

62.5W Tc

N-Channel

1.4m Ω @ 15A, 10V

2.1V @ 250μA

2650pF @ 10V

60A Tc

26nC @ 4.5V

-

4.5V 10V

20V, -16V

ROHS3 Compliant

-

-

-

-

-

-

-

EAR99

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

5W

-

-

44.5A

-

-

-

-

-

-

-

S17-0173-Single

unknown

1

12 ns

18 ns

25V

150°C

1.17mm

-

-

-

-

-

-

-

SIRA54DP-T1-GE3 vs SIRA24DP-T1-GE3
SIRA12DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

PowerPAK® SO-8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

4.5W Ta 31W Tc

N-Channel

4.3m Ω @ 10A, 10V

2.2V @ 250μA

2070pF @ 15V

25A Tc

45nC @ 10V

-

4.5V 10V

20V, -16V

ROHS3 Compliant

-

Surface Mount

8

SILICON

2001

-

5

EAR99

FET General Purpose Power

DUAL

C BEND

-

-

R-PDSO-C5

1

-

ENHANCEMENT MODE

4.5W

DRAIN

SWITCHING

25A

1.1V

20V

-

-

-

Unknown

No

-

-

1

20 ns

25 ns

30V

-

1.12mm

506.605978mg

4.3mOhm

Single

20 ns

6.25mm

5.26mm

Lead Free

SIRA54DP-T1-GE3 vs SIRA12DP-T1-GE3