Vishay Siliconix SI7804DN-T1-E3

SI7804DN-T1-E3 Overview
This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.MOSFETs have 18.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7804DN-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 32 ns
single MOSFETs transistor is 18.5mOhm
a 30V drain to source voltage (Vdss)


SI7804DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7804DN-T1-E3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit