Vishay Siliconix SI7882DP-T1-E3

SI7882DP-T1-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 7.2 mJ.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.4V.This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.

SI7882DP-T1-E3 Features
the avalanche energy rating (Eas) is 7.2 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 82 ns
based on its rated peak drain current 50A.
a threshold voltage of 1.4V


SI7882DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7882DP-T1-E3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters