SI7880ADP-T1-E3

Vishay Siliconix SI7880ADP-T1-E3

Part Number:
SI7880ADP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3586154-SI7880ADP-T1-E3
Description:
MOSFET N-CH 30V 40A PPAK SO-8
ECAD Model:
Datasheet:
SI7880ADP-T1-E3

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Specifications
Vishay Siliconix SI7880ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7880ADP-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    3mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.4W Ta 83W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5600pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    125nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    96 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Nominal Vgs
    1 V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7880ADP-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5600pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 96 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI7880ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V


SI7880ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7880ADP-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI7880ADP-T1-E3 More Descriptions
Single N-Channel 30 V 0.003 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7880ADP-T1-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI7880ADP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain-source On Resistance-Max
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI7880ADP-T1-E3
    SI7880ADP-T1-E3
    14 Weeks
    Surface Mount, Through Hole
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    3mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-XDSO-C5
    1
    1
    5.4W Ta 83W Tc
    Single
    ENHANCEMENT MODE
    5.4W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    3m Ω @ 20A, 10V
    3V @ 250μA
    5600pF @ 15V
    40A Tc
    125nC @ 10V
    14ns
    4.5V 10V
    ±20V
    30 ns
    96 ns
    40A
    1V
    20V
    30V
    70A
    1 V
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7862ADP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    42 ns
    N-Channel
    SWITCHING
    3m Ω @ 29A, 4.5V
    2V @ 250μA
    7340pF @ 8V
    18A Ta
    80nC @ 4.5V
    38ns
    2.5V 4.5V
    ±8V
    50 ns
    120 ns
    18A
    -
    8V
    16V
    60A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    0.003Ohm
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7840BDP-T1-GE3
    15 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    PURE MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    -
    R-PDSO-C5
    1
    1
    1.8W Ta
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 16.5A, 10V
    3V @ 250μA
    -
    11A Ta
    21nC @ 4.5V
    14ns
    4.5V 10V
    ±20V
    14 ns
    39 ns
    11A
    -
    20V
    -
    50A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    0.0085Ohm
    30V
    30V
    20 mJ
    -
    -
    -
    -
    -
  • SI7804DN-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    -
    -
    Active
    1 (Unlimited)
    -
    -
    18.5mOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    1.5W Ta
    Single
    -
    -
    -
    8 ns
    N-Channel
    -
    18.5mOhm @ 10A, 10V
    1.8V @ 250μA
    -
    6.5A Ta
    13nC @ 5V
    12ns
    4.5V 10V
    ±20V
    12 ns
    32 ns
    10A
    -
    20V
    -
    -
    -
    1.04mm
    3.05mm
    3.05mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    30V
    -
    -
    PowerPAK® 1212-8
    150°C
    -55°C
    18.5mOhm
    18.5 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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