Vishay Siliconix SI7880ADP-T1-E3
- Part Number:
- SI7880ADP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586154-SI7880ADP-T1-E3
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Datasheet:
- SI7880ADP-T1-E3
Vishay Siliconix SI7880ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7880ADP-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance3mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.4W Ta 83W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5.4W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5600pF @ 15V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time96 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)70A
- Nominal Vgs1 V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7880ADP-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5600pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 96 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7880ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SI7880ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7880ADP-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5600pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 96 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7880ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SI7880ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7880ADP-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI7880ADP-T1-E3 More Descriptions
Single N-Channel 30 V 0.003 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7880ADP-T1-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7880ADP-T1-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI7880ADP-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain-source On Resistance-MaxDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source ResistanceRds On MaxView Compare
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SI7880ADP-T1-E314 WeeksSurface Mount, Through HoleSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)5EAR993mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C5115.4W Ta 83W TcSingleENHANCEMENT MODE5.4WDRAIN20 nsN-ChannelSWITCHING3m Ω @ 20A, 10V3V @ 250μA5600pF @ 15V40A Tc125nC @ 10V14ns4.5V 10V±20V30 ns96 ns40A1V20V30V70A1 V1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free----------
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14 WeeksSurface MountSurface MountPowerPAK® SO-8-506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODE-DRAIN42 nsN-ChannelSWITCHING3m Ω @ 29A, 4.5V2V @ 250μA7340pF @ 8V18A Ta80nC @ 4.5V38ns2.5V 4.5V±8V50 ns120 ns18A-8V16V60A-----NoROHS3 Compliant-0.003Ohm--------
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15 WeeksSurface MountSurface MountPowerPAK® SO-8-506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)5EAR99-PURE MATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND26030-R-PDSO-C5111.8W TaSingleENHANCEMENT MODE-DRAIN17 nsN-ChannelSWITCHING8.5m Ω @ 16.5A, 10V3V @ 250μA-11A Ta21nC @ 4.5V14ns4.5V 10V±20V14 ns39 ns11A-20V-50A-----NoROHS3 Compliant-0.0085Ohm30V30V20 mJ-----
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14 WeeksSurface MountSurface MountPowerPAK® 1212-88---55°C~150°C TJTape & Reel (TR)TrenchFET®2017--Active1 (Unlimited)--18.5mOhm--MOSFET (Metal Oxide)-------11.5W TaSingle---8 nsN-Channel-18.5mOhm @ 10A, 10V1.8V @ 250μA-6.5A Ta13nC @ 5V12ns4.5V 10V±20V12 ns32 ns10A-20V---1.04mm3.05mm3.05mm-NoROHS3 CompliantLead Free-30V--PowerPAK® 1212-8150°C-55°C18.5mOhm18.5 mΩ
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