Vishay Siliconix SI7848BDP-T1-GE3
- Part Number:
- SI7848BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070032-SI7848BDP-T1-GE3
- Description:
- MOSFET N-CH 40V 47A PPAK SO-8
- Datasheet:
- SI7848BDP-T1-GE3
Vishay Siliconix SI7848BDP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7848BDP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance9mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max4.2W Ta 36W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation4.2W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 20V
- Current - Continuous Drain (Id) @ 25°C47A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)47A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)50A
- DS Breakdown Voltage-Min40V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7848BDP-T1-GE3 Overview
A device's maximal input capacitance is 2000pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 47A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI7848BDP-T1-GE3 Features
a continuous drain current (ID) of 47A
the turn-off delay time is 30 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
SI7848BDP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7848BDP-T1-GE3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2000pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 47A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI7848BDP-T1-GE3 Features
a continuous drain current (ID) of 47A
the turn-off delay time is 30 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
SI7848BDP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7848BDP-T1-GE3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
SI7848BDP-T1-GE3 More Descriptions
Single N-Channel 40 V 0.009 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:4.2W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, N CH, 40V, 47A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:4.2W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, N CH, 40V, 47A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8
The three parts on the right have similar specifications to SI7848BDP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain-source On Resistance-MaxDrain to Source Breakdown VoltageTerminationAdditional FeatureDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source ResistanceRds On MaxView Compare
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SI7848BDP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2017e3yesActive1 (Unlimited)5EAR999mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C5114.2W Ta 36W TcSingleENHANCEMENT MODE4.2WDRAIN10 nsN-ChannelSWITCHING9m Ω @ 16A, 10V3V @ 250μA2000pF @ 20V47A Tc50nC @ 10V15ns40V4.5V 10V±20V10 ns30 ns47A3V20V50A40V1.04mm4.9mm5.89mmNo SVHCNoROHS3 CompliantLead Free-------------
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14 WeeksSurface MountSurface MountPowerPAK® SO-8-506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODE-DRAIN42 nsN-ChannelSWITCHING3m Ω @ 29A, 4.5V2V @ 250μA7340pF @ 8V18A Ta80nC @ 4.5V38ns-2.5V 4.5V±8V50 ns120 ns18A-8V60A-----NoROHS3 Compliant-0.003Ohm16V----------
-
-Surface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)5EAR995.5mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-PDSO-C5111.9W TaSingleENHANCEMENT MODE5WDRAIN28 nsN-ChannelSWITCHING5.5m Ω @ 17A, 4.5V1.4V @ 250μA-13A Ta30nC @ 4.5V32ns-2.5V 4.5V±8V32 ns82 ns13A1.4V8V50A-1.04mm4.9mm5.89mmNo SVHCNoROHS3 CompliantLead Free--SMD/SMTFAST SWITCHING12V7.2 mJ1.4 V-----
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14 WeeksSurface MountSurface MountPowerPAK® 1212-88---55°C~150°C TJTape & Reel (TR)TrenchFET®2017--Active1 (Unlimited)--18.5mOhm--MOSFET (Metal Oxide)-------11.5W TaSingle---8 nsN-Channel-18.5mOhm @ 10A, 10V1.8V @ 250μA-6.5A Ta13nC @ 5V12ns30V4.5V 10V±20V12 ns32 ns10A-20V--1.04mm3.05mm3.05mm-NoROHS3 CompliantLead Free-------PowerPAK® 1212-8150°C-55°C18.5mOhm18.5 mΩ
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