SI7848BDP-T1-GE3

Vishay Siliconix SI7848BDP-T1-GE3

Part Number:
SI7848BDP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070032-SI7848BDP-T1-GE3
Description:
MOSFET N-CH 40V 47A PPAK SO-8
ECAD Model:
Datasheet:
SI7848BDP-T1-GE3

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix SI7848BDP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7848BDP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    9mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    4.2W Ta 36W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    4.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    47A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    47A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    50A
  • DS Breakdown Voltage-Min
    40V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7848BDP-T1-GE3 Overview
A device's maximal input capacitance is 2000pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 47A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI7848BDP-T1-GE3 Features
a continuous drain current (ID) of 47A
the turn-off delay time is 30 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)


SI7848BDP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7848BDP-T1-GE3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
SI7848BDP-T1-GE3 More Descriptions
Single N-Channel 40 V 0.009 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:4.2W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, N CH, 40V, 47A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8
Product Comparison
The three parts on the right have similar specifications to SI7848BDP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Termination
    Additional Feature
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI7848BDP-T1-GE3
    SI7848BDP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    9mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-XDSO-C5
    1
    1
    4.2W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    4.2W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 16A, 10V
    3V @ 250μA
    2000pF @ 20V
    47A Tc
    50nC @ 10V
    15ns
    40V
    4.5V 10V
    ±20V
    10 ns
    30 ns
    47A
    3V
    20V
    50A
    40V
    1.04mm
    4.9mm
    5.89mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7862ADP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    42 ns
    N-Channel
    SWITCHING
    3m Ω @ 29A, 4.5V
    2V @ 250μA
    7340pF @ 8V
    18A Ta
    80nC @ 4.5V
    38ns
    -
    2.5V 4.5V
    ±8V
    50 ns
    120 ns
    18A
    -
    8V
    60A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    0.003Ohm
    16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7882DP-T1-E3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    5.5mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    5W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    5.5m Ω @ 17A, 4.5V
    1.4V @ 250μA
    -
    13A Ta
    30nC @ 4.5V
    32ns
    -
    2.5V 4.5V
    ±8V
    32 ns
    82 ns
    13A
    1.4V
    8V
    50A
    -
    1.04mm
    4.9mm
    5.89mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    SMD/SMT
    FAST SWITCHING
    12V
    7.2 mJ
    1.4 V
    -
    -
    -
    -
    -
  • SI7804DN-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    -
    -
    Active
    1 (Unlimited)
    -
    -
    18.5mOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    1.5W Ta
    Single
    -
    -
    -
    8 ns
    N-Channel
    -
    18.5mOhm @ 10A, 10V
    1.8V @ 250μA
    -
    6.5A Ta
    13nC @ 5V
    12ns
    30V
    4.5V 10V
    ±20V
    12 ns
    32 ns
    10A
    -
    20V
    -
    -
    1.04mm
    3.05mm
    3.05mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    PowerPAK® 1212-8
    150°C
    -55°C
    18.5mOhm
    18.5 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.