Vishay Siliconix SI7840BDP-T1-E3

SI7840BDP-T1-E3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI7840BDP-T1-E3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 39 ns
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)


SI7840BDP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7840BDP-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,